Abstract: A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed on and corresponds to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a sealing layer, and at least a portion of the sealing layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the sealing layer define a chamber.

Abstract: A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed to correspond to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a packaging layer, and at least a portion of the packaging layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the packaging layer define a chamber.

Abstract: A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed on and corresponds to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a sealing layer, and at least a portion of the sealing layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the sealing layer define a chamber.

Abstract: A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed to correspond to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a packaging layer, and at least a portion of the packaging layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the packaging layer define a chamber.

Abstract: A double-sided organic light-emitting display apparatus includes: a rigid substrate; a transmission flexible substrate and a reflective flexible substrate formed on the rigid substrate; a display substrate having a plurality of switching elements and formed on the transmission flexible substrate and the reflective flexible substrate; and a top-emission OLED light-emitting layer and a bottom-emission OLED light-emitting layer formed on the display substrate. The top-emission OLED light-emitting layer is corresponding to the reflective flexible substrate and the bottom-emission OLED light-emitting layer is corresponding to the transmission flexible substrate. The OLED display apparatus can serve as a double-sided display, and because of the use of the flexible substrate, it also has the advantage of easy carrying and flexibility.

Abstract: A double-sided organic light-emitting display apparatus includes: a rigid substrate; a transmission flexible substrate and a reflective flexible substrate formed on the rigid substrate; a display substrate having a plurality of switching elements and formed on the transmission flexible substrate and the reflective flexible substrate; and a top-emission OLED light-emitting layer and a bottom-emission OLED light-emitting layer formed on the display substrate. The top-emission OLED light-emitting layer is corresponding to the reflective flexible substrate and the bottom-emission OLED light-emitting layer is corresponding to the transmission flexible substrate. The OLED display apparatus can serve as a double-sided display, and because of the use of the flexible substrate, it also has the advantage of easy carrying and flexibility.

Abstract: The present application discloses a double sided organic light-emitting display apparatus, including: a rigid substrate; a transmission flexible substrate and a reflective flexible substrate formed on the rigid substrate; a display substrate having a plurality of switching elements formed on the transmission flexible substrate and the reflective flexible substrate; and a top-emission OLED light-emitting layer and a bottom-emission OLED light-emitting layer formed on the display substrate, wherein the top-emission OLED light-emitting layer is corresponding to the reflective flexible substrate and the bottom-emission OLED light-emitting layer is corresponding to the transmission flexible substrate. The present application also provides a method of manufacturing the OLED display apparatus. The OLED display apparatus can achieve the double sided display, and because of its use of the flexible substrate, it also has the advantage of ease of carrying and flexible property.

Abstract: The present application discloses a double sided organic light-emitting display apparatus, including: a rigid substrate; a transmission flexible substrate and a reflective flexible substrate formed on the rigid substrate; a display substrate having a plurality of switching elements formed on the transmission flexible substrate and the reflective flexible substrate; and a top-emission OLED light-emitting layer and a bottom-emission OLED light-emitting layer formed on the display substrate, wherein the top-emission OLED light-emitting layer is corresponding to the reflective flexible substrate and the bottom-emission OLED light-emitting layer is corresponding to the transmission flexible substrate. The present application also provides a method of manufacturing the OLED display apparatus. The OLED display apparatus can achieve the double sided display, and because of its use of the flexible substrate, it also has the advantage of ease of carrying and flexible property.

Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate. The method includes forming a buffer layer over the semiconductor substrate. The buffer layer is in an amorphous state. The method includes nitriding the buffer layer into a nitride buffer layer. The method includes forming a gate dielectric layer over the nitride buffer layer. The method includes performing a thermal annealing process to convert the gate dielectric layer into a crystalline gate dielectric layer. The method includes forming a gate electrode over the crystalline gate dielectric layer.

Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes a dielectric film over a dielectric layer. The dielectric film includes a crystalline structure having a substantially uniform composition of zirconium, nitrogen and oxygen. The dielectric film is formed through in situ nitrogen plasma doping of a zirconium layer. The dielectric film functions as a gate dielectric. The dielectric film has a high dielectric constant between about 28-29 and has a low leakage current density of about 4.79×10?5 A/cm2. The substantially uniform distribution of nitrogen throughout the zirconium oxide of the dielectric film increases the k value of the dielectric film by between about 15% to about 17% as compared to a dielectric film that has a non-uniform distribution of nitrogen through a zirconium oxide layer.

Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate. The method includes forming a buffer layer over the semiconductor substrate. The buffer layer is in an amorphous state. The method includes nitriding the buffer layer into a nitride buffer layer. The method includes forming a gate dielectric layer over the nitride buffer layer. The method includes performing a thermal annealing process to convert the gate dielectric layer into a crystalline gate dielectric layer. The method includes forming a gate electrode over the crystalline gate dielectric layer.

Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes a dielectric film over a dielectric layer. The dielectric film includes a crystalline structure having a substantially uniform composition of zirconium, nitrogen and oxygen. The dielectric film is formed through in situ nitrogen plasma doping of a zirconium layer. The dielectric film functions as a gate dielectric. The dielectric film has a high dielectric constant between about 28-29 and has a low leakage current density of about 4.79×10?5 A/cm2. The substantially uniform distribution of nitrogen throughout the zirconium oxide of the dielectric film increases the k value of the dielectric film by between about 15% to about 17% as compared to a dielectric film that has a non-uniform distribution of nitrogen through a zirconium oxide layer.

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a nitride buffer layer over the semiconductor substrate, and the nitride buffer layer is in an amorphous state. The semiconductor device also includes a crystalline gate dielectric layer over the nitride buffer layer and a gate electrode over the crystalline gate dielectric layer.

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a nitride buffer layer over the semiconductor substrate, and the nitride buffer layer is in an amorphous state. The semiconductor device also includes a crystalline gate dielectric layer over the nitride buffer layer and a gate electrode over the crystalline gate dielectric layer.

Abstract: A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.

Abstract: A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.