Abstract: Described herein is an etching solution and the method of using the etching solution comprising water, phosphoric acid solution (aqueous), an organosilicon compound as disclosed herein, and a hydroxyl group-containing water-miscible solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide.

Abstract: Etching composition suitable for etching titanium nitride and molybdenum from a microelectronic device, which includes, consists essentially of, or consists of, in effective amounts: water; HNO3; optionally, at least one chloride ion source selected from the group of NH4Cl and HCl; a base selected from the group of an alkanolamine, NH4OH, a quaternary ammonium hydroxide, and mixtures thereof; optionally, at least one fluoride ion source; optionally, at least one heteroaromatic compound; and optionally, at least one water-miscible solvent selected from the group of diethylene glycol butyl ether, sulfolane, and propylene carbonate.

Abstract: Described herein is an etching solution suitable for both tungsten-containing metals and TiN-containing materials, which comprises: water; and one or more than one oxidizers; and one or more than one of the components selected from the group consisting of: one or more fluorine-containing-etching compounds, one or more organic solvents, one or more chelating agents, one or more corrosion inhibitors and one or more surfactants.

Abstract: The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

Abstract: The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

Abstract: Described herein is an etching solution and the method of using the etching solution comprising water, phosphoric acid solution (aqueous), an organosilicon compound as disclosed herein, and a hydroxyl group-containing water-miscible solvent.

Abstract: Stripping solutions that may replace an etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes and/or packaging/bumping applications on semiconductor devices for semiconductor integrated circuits with good photoresist removal efficiency and with low silicon oxide etch rate and low metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain polar aprotic solvent, water, hydroxylamine, corrosion inhibitor, quaternary ammonium hydroxide and optional surfactant. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

Abstract: Described herein is an aqueous composition for treating a substrate including patterns having line-space dimensions of 50 nm or below to prevent collapse of the patters, the composition comprising: a solvent system comprising water and a water-miscible organic solvent; a surface modifier that is a reaction product between an alkylamine and an organic acid; and an optional pH adjusting agent.

Abstract: Described herein is an etching solution suitable for both tungsten-containing metals and TiN-containing materials, which comprises: water; and one or more than one oxidizers; and one or more than one of the components selected from the group consisting of: one or more fluorine-containing-etching compounds, one or more organic solvents, one or more chelating agents, one or more corrosion inhibitors and one or more surfactants.

Abstract: Described herein is an aqueous composition for treating a substrate including patterns having line-space dimensions of 50 nm or below to prevent collapse of the patters, the composition comprising: a solvent system comprising water and a water-miscible organic solvent; a surface modifier that is a reaction product between an alkylamine and an organic acid; and an optional pH adjusting agent.

Abstract: Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-miscible solvent; and a fluoride ion source.

Abstract: Stripping solutions that may replace an etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes and/or packaging/bumping applications on semiconductor devices for semiconductor integrated circuits with good photoresist removal efficiency and with low silicon oxide etch rate and low metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain polar aprotic solvent, water, hydroxylamine, corrosion inhibitor, quaternary ammonium hydroxide and optional surfactant. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

Abstract: A curing agent in a structural adhesive includes a plurality of spherical shells and a curing compound bonded to an outer surface of each of the plurality of spherical shells. Each spherical shell is formed of a plurality of primary magnetic nanoparticles. The spherical shells can be broken down under an applied frequency-varied magnetic field, allowing objects bonded by such adhesive to be separated. A method for making the curing agent, and a structural adhesive using the curing agent are also provided.

Abstract: A method is employed for repairing an electronic device. The electronic device includes a base plate, a component installed on the base plate, and a second workpiece adhered on the base plate by an adhesive agent which is positioned adjacent to or away from the component. The method includes the following procedures. A reflective layer is formed on a side of the base plate away from the component to cover the part of the base plate corresponding to the component, and the reflective protection layer is capable of reflecting infrared radiation to protect the component. The adhesive agent is softened by infrared radiation to decrease an adhesive strength of the adhesive agent. The remaining reflective protection layer is removed. The electronic device is dissembled to separate the first workpiece from the second workpiece.

Abstract: A method for removing an adhesive agent from a base plate with a plurality of accessories installed adjacent to the adhesive agent includes certain steps. The steps form a protection layer on the base plate, and the protection layer completely covers the electronic members and completely or partially covers the adhesive agent. The protection layer is solidified and a part of the protection layer is removed to expose the adhesive agent. The base plate is soaked in a removing solution to soften the adhesive agent and decrease an adhering strength of the adhesive agent, the protection layer being resistant to the removing solution to protect the electronic members. The softened adhesive agent is scraped off and the remaining protection layer removed.

Abstract: An adhering structure is disclosed. The adhering structure includes an adhering member, an adhesive layer, and a surface treatment layer sandwiched between the adhering member and the adhesive. The surface treatment layer includes a plurality of magnetic disabling particles. Each of the plurality of magnetic disabling particles has a core-shell structure, and includes a magnetic shell and a core capsulated in the magnetic shell. The core decreases an adhesive strength of the adhesive layer.