Abstract: A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

Abstract: A method for forming a ZrO2 oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a ZrN film, and a cathode into an electrolyte of which the temperature range is from 65° C. to 75° C. Said electrolyte contains barium acetate or barium hydroxide ranging from 0.3 M to 0.7 M and sodium hydroxide or potassium hydroxide ranging from 1.5 M to 2.5 M. The method includes a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form a ZrO2 film on a surface of the ZrN film of the anode. A DC power supply, an AC power supply, unipolar pulse power supply or bipolar pulse power supply is applied to said anode and cathode in constant-voltage mode or constant-current mode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

Abstract: A method for forming a ZrO2 oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a ZrN film, and a cathode into an electrolyte of which the temperature range is from 65° C. to 75° C. Said electrolyte contains barium acetate or barium hydroxide ranging from 0.3 M to 0.7 M and sodium hydroxide or potassium hydroxide ranging from 1.5 M to 2.5 M. The method includes a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form a ZrO2 film on a surface of the ZrN film of the anode. A DC power supply, an AC power supply, unipolar pulse power supply or bipolar pulse power supply is applied to said anode and cathode in constant-voltage mode or constant-current mode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

Abstract: A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.