Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate having an isolation ring extending in the direction substantially parallel to the surface of the substrate, an active region over the substrate and laterally enclosed by the isolation ring, a seal ring structure over the substrate, the seal ring structure laterally enclosing the active region and including at least a wiring layer and at least a via layer, and an encapsulant material laterally enclosing the seal ring structure.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a first capacitor conductor disposed over an isolation structure arranged within a substrate. The isolation structure laterally extends past opposing outer sidewalls of the first capacitor conductor. A capacitor dielectric is arranged along one of the opposing outer sidewalls of the first capacitor conductor and over a top surface of the first capacitor conductor. A second capacitor conductor is arranged along an outer sidewall of the capacitor dielectric and over a top surface of the capacitor dielectric. The second capacitor conductor laterally overlaps parts of both the capacitor dielectric and the first capacitor conductor.

Abstract: A gate oxide layer for a high voltage transistor is formed using methods that avoid thinning in the corners of the gate oxide layer. A recess is formed in a silicon substrate. The exposed surfaces of the recess are thermally oxidized to form a thermal oxide layer of the gate oxide layer. A high temperature oxide layer of the gate oxide layer is then formed within the exposed surfaces of the recess by chemical vapor deposition. The combination of the thermal oxide layer and the high temperature oxide layer results in a gate oxide layer that does not exhibit the double hump phenomenon in the drain current vs. gate voltage curve. The high temperature oxide layer may include a rim that extends out of the recess.

Abstract: Some embodiments relate to an integrated circuit device incorporating an etched recessed gate dielectric region. The integrated circuit device includes a substrate including a first upper surface, a gate dielectric region disposed at the first upper surface of the substrate and extending into the substrate, and a gate structure disposed over the gate dielectric region. The gate dielectric region includes a second upper surface and forms a recess extending below the second upper surface. The second upper surface includes a perimeter portion surrounding the recess. The gate structure completely covers the second upper surface of the gate dielectric region and extends into the recess.

Abstract: A semiconductor structure includes a substrate, an isolation structure disposed in the substrate, and a hybrid structure disposed over the isolation structure. The hybrid structure is substantially conformal with respect to a profile of the isolation structure. The hybrid structure includes an oxide component, a nitride component surrounding the oxide component, and a first polysilicon component alongside the nitride component. The nitride component includes a first upper surface closed to the first polysilicon component, and a second upper surface distal to the first polysilicon component. The second upper surface is lower than the first upper surface.

Abstract: A semiconductor structure and forming method thereof are provided. A substrate includes a first region, a second region, and a boundary region defined between the first region and the second region. An isolation structure is disposed in the boundary region. An upper surface of the isolation structure has a stepped profile. A first boundary dielectric layer and a second boundary dielectric layer are disposed over the isolation structure. The first boundary dielectric layer is substantially conformal with respect to the stepped profile of the isolation structure.

Abstract: Some embodiments relate to an integrated chip structure. The integrated chip structure includes a substrate having a first device region and a second device region. A plurality of first transistor devices are disposed in the first device region and respectively include epitaxial source/drain regions disposed on opposing sides of a first gate structure. The epitaxial source/drain regions have an epitaxial material. A plurality of second transistor devices are disposed in the second device region and respectively include implanted source/drain regions disposed on opposing sides of a second gate structure. A dummy region includes one or more dummy structures. The one or more dummy structures have dummy epitaxial regions including the epitaxial material.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The a semiconductor structure includes: a substrate; a gate electrode disposed within the substrate; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate electrode adjacent to the plurality of first structures; and an insulating layer between the second protection structure and the gate electrode.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate, a gate electrode, a gate dielectric layer, first protection structures, a second protection structure and an insulating layer. The gate electrode is disposed within the substrate. The gate dielectric layer is disposed within the substrate and laterally surrounds the gate electrode. The first protection structures are disposed over the gate electrode. The second protection structure is disposed over the gate dielectric layer. The insulating layer is between the second protection structure and the gate dielectric layer.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes: a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures formed in an array disposed over the gate electrode; and a second protection structure comprising a ring shape from a top-view perspective, and disposed over the gate dielectric layer and at a same level as the plurality of first protection structures from a cross-sectional view.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate dielectric layer and contacting the gate dielectric layer; and a pair of source/drain regions on opposing sides of the gate dielectric layer.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having one or more interior surfaces forming a recess within an upper surface of the substrate. Source/drain regions are disposed within the substrate on opposing sides of the recess. A first gate dielectric is arranged along the one or more interior surfaces forming the recess, and a second gate dielectric is arranged on the first gate dielectric and within the recess. A gate electrode is disposed on the second gate dielectric. The second gate dielectric includes one or more protrusions that extend outward from a recessed upper surface of the second gate dielectric and that are arranged along opposing sides of the second gate dielectric.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a source region, a drain region, a gate region and a gate oxide. The gate region is disposed between the source region and the drain region. The gate oxide is disposed on the gate region. A bottom interface is between the gate region and the gate oxide, and an entire of the bottom interface is substantially flat.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises an insulating structure, a dielectric structure, a metal structure, a conductive spacer and a dielectric spacer. The dielectric structure is formed on the insulating structure. The metal structure is formed on and surrounded by the dielectric structure. A bottom surface and a lateral surface of the metal structure are in direct contact with the dielectric structure. The conductive spacer is formed on the insulating structure. The conductive spacer surrounds the dielectric structure. The dielectric spacer is formed on the insulating structure, wherein the dielectric spacer surrounds the conductive spacer.

Abstract: Interlayer dielectric (ILD) layer(s) of a semiconductor device may be configured as a gate oxide for high-voltage transistors, and therefore additional process operations to deposit dedicated gate oxide layers are not needed. Moreover, additional processing operations to form the gate structures of the high-voltage fin-based PMOS transistors and high-voltage fin-based NMOS transistors are not needed in that middle end of line (MEOL process and back end of line (BEOL) processes can be used as the gate formation process of the high-voltage transistors.

Abstract: A semiconductor structure includes a substrate, a first FET device and a second FET device. The substrate has a first region and a second region. The first FET device is in the first region, and the second FET device is in the second region. The first FET device includes a first isolation structure, a first gate electrode disposed over a portion of the first isolation structure, and a first gate dielectric layer between the substrate and the first gate electrode. The first gate dielectric layer has a first thickness. The second FET device includes a plurality of fin structures, a plurality of second isolation structures, a second gate electrode over the plurality of fin structures, and a second gate dielectric layer between the second gate electrode and the plurality of fin structures. The second gate dielectric layer has a second thickness. The second thickness is less than the first thickness.

Abstract: A semiconductor device is provided. The semiconductor device includes a first die, a second die, a first through via, and a second through. The first die includes a first substrate, a first interconnection structure disposed on the first substrate, and a plurality of first bonding substructures over the first interconnect structure. The second die includes a second substrate, a second interconnect structure disposed on the second substrate, and a plurality of second bonding substructures over the second interconnect structure. The plurality of second bonding substructures are bonded to the plurality of first bonding substructures. The first through via and the second through via extend through the second substrate and to the second interconnect structure, wherein the first through via and the second through via are electrically disconnected to each other.

Abstract: A semiconductor structure and forming method thereof are provided. A substrate includes a region. A first gate structure and a sacrificial gate structure are recessed in the substrate and disposed in the region. The sacrificial gate structure is adjacent to the first gate structure. A first contact is electrically connected to the first gate structure. A sacrificial gate masking structure is disposed over the sacrificial gate structure. An upper surface of the sacrificial gate structure is entirely covered by the sacrificial gate masking structure.

Abstract: A semiconductor structure includes a first device, a second device, and a plurality of pillars. The first device includes a first dielectric layer, a first high-k dielectric layer over the first dielectric layer, and a first metal gate structure. The second device includes a second dielectric layer, a second high-k dielectric layer over the second dielectric layer, and a second metal gate structure. The first dielectric layer has a first thickness, the second dielectric layer has a second thickness, and the second thickness is less than the first thickness. The pillars are disposed in the first metal gate structure. The pillars are separated from each other by the first metal gate structure.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate dielectric layer and contacting the gate dielectric layer; and a pair of source/drain regions on opposing sides of the gate dielectric layer.