Abstract: A method is provided for producing a dummy pattern for an I.C. semiconductor device multi-layer interconnection metallurgy, having a planar global top surface with a dummy pattern for a circuit for use with conductor lines in the circuit pattern. Create a reverse pattern which is a complement of a widened conductor lines in the circuit pattern with openings about the location of the circuit pattern and provide a dummy cross grid pattern. A gridded dummy pattern is generated by creating a dummy grid pattern of the reverse pattern combining it with the negative of the dummy cross grid pattern leaving a cross grid of dummy elements and openings about the location of the circuit pattern. Provide a revised pattern by adding the circuit pattern to the gridded dummy pattern. Take the product of a contact layout pattern multiplied times the sizing operator multiplied times a separation parameter. Then subtract the sized and separated contact layout pattern from the gridded dummy pattern.