Abstract: A carbon nanotube includes carbon nanotubes, and an entanglement member which is combined with the carbon nanotubes and has a three-dimensional shape.

Abstract: The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).

Abstract: An inorganic electroluminescence device including a first electrode and a second electrode disposed apart from each other, and a dielectric material layer disposed between the first and second electrodes. The dielectric material layer has a micro-tubular shape, and a light emitting layer is filled in the dielectric material layer.

Abstract: A thin film solar cell, includes: a first electrode; a light absorption layer including a first light absorption layer including a group I element-group III element-group VI element compound, a second light absorption layer including a group I element-group III element-group VI element compound, and a third light absorption layer including a group I element-group III element-group VI element compound; and a second electrode, wherein the first light absorption layer has a band gap, which is less a band gap of the second light absorption layer, the band gap of the second light absorption layer is less than a band gap of the third light absorption layer, and the second light absorption layer has a band gap gradient, which increases in a direction from the first light absorption layer to the third light absorption layer.

Abstract: An inorganic electroluminescence device including a first electrode and a second electrode disposed apart from each other, and a dielectric material layer disposed between the first and second electrodes. The dielectric material layer has a micro-tubular shape, and a light emitting layer is filled in the dielectric material layer.

Abstract: A method of manufacturing a dispersion type inorganic electroluminescence device and a dispersion type inorganic electroluminescence device including a light-emitting layer and a dielectric layer, which are integrated, are disclosed. The method is directed to the manufacture of a dispersion type inorganic electroluminescence device, in which phosphor particles are coated with a metal oxide precursor using ultrasonic waves, after which the phosphor particles coated with the metal oxide precursor are disposed between a transparent electrode and an upper electrode, forming a light-emitting layer and a dielectric layer, which are integrated. The dispersion type inorganic electroluminescence device includes a plurality of phosphor particles coated with a metal oxide precursor, disposed between a transparent electrode and an upper electrode, thereby providing a light-emitting layer and a dielectric layer, which are integrated.

Abstract: Disclosed is a method for a making cathode substrate for a flat panel display device including coating a cathode electrode composition on a substrate to produce a cathode electrode, coating a conductive composition including a Si-included material on the cathode electrode to prepare a conductive layer on the cathode electrode and applying an electron emission composition including a material such as carbon nano tube on the conductive layer.

Abstract: A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes (a) sequentially stacking a first semiconductor layer, a mask layer, and a metal layer on a substrate; (b) anodizing the metal layer to change the metal layer into a metal oxide layer including a plurality of nanoholes; (c) etching the mask layer using the metal oxide layer as an etch mask until the nanoholes are extended to the surface of the first semiconductor layer; (d) removing the metal oxide layer; and (e) depositing a second semiconductor layer on the mask layer and the first semiconductor layer. The present invention reduces defect density and promotes a uniform defect distribution.

Abstract: A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.

Abstract: A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterned dielectric layer on the ohmic contact layer; depositing a patterned photoresist on the ohmic contact layer to define a p- electrode stripe layer; forming the p- electrode stripe layer only on a part of the ohmic contact layer; performing an annealing process; etching back the layers until the photo-waveguide layer is exposed, using the first patterned dielectric layer and the p- electrode stripe layer as an etching mask, to form a ridge; depositing a second dielectric layer on the substrate formed thus; selectively removing the second dielectric layer to form a contact hole on the p- electrode stripe layer; coating a bonding pad metal layer on the second dielectric layer and in the contact hole; and coating an n- electrode metal layer on bottom surface of t

Abstract: An avalanche photodiode in which a strained superlattice structure is used as a multiplication layer, comprising: an n.sup.+ type InP substrate; an n.sup.+ type InP epitaxial layer formed on a main surface of the substrate; an N type In.sub.1-x Al.sub.x As layer formed on the epitaxial layer; an n.sup.+ type In.sub.1-x Al.sub.x As layer formed on the N type In.sub.1-x Al.sub.x As layer, the n.sup.+ type In.sub.1-x Al.sub.x As layer having a relatively high impurity concentration more than the N type In.sub.1-x Al.sub.x As layer; the multiplication layer deposited on the n.sup.+ type In.sub.1-x Al.sub.x As layer, the multiplication layer having an In.sub.0.53 Ga.sub.0.47 As/In.sub.1-x Al.sub.x As superlattice structure; first and second p.sup.+ type In.sub.1-x Al.sub.x As layers laminated sequentially on the multiplication layer; an absorbing layer formed on the second p.sup.+ type In.sub.1-x Al.sub.x As layer, the absorbing layer being made of an In.sub.0.53 Ga.sub.0.