Abstract: The present disclosure provides methods for treating childhood-onset idiopathic nephrotic syndrome (INS), or reducing risk and/or frequency of relapse from childhood-onset INS, in an individual that is greater than or equal to 2 years of age and less than or equal to 25 years of age. In some embodiments, the methods comprise administering to the individual an effective amount of obinutuzumab.

Abstract: Provided herein are methods of treating B-cell proliferative disorders (such as Diffuse Large B-Cell Lymphoma “DLBCL”) using immunoconjugates comprising anti-CD79b antibodies in combination with an alkylating agent (such as bendamustine) and an anti-CD20 antibody (such as rituximab).

Abstract: A flexible display screen and a flexible display apparatus are provided. The flexible display screen includes a display device, a flexible substrate, a support structure and a drive chip. The display device is positioned on the flexible substrate, and the flexible substrate is positioned on the support structure. The support structure further defines a groove thereon to accommodate the drive chip.

Abstract: A pixel structure and a display panel having the pixel structure are disclosed by the present application. The pixel structure includes a plurality of pixel units arranged in an array. The pixel units are arranged respectively along a first direction and a second direction perpendicular to the first direction. Each of the plurality of pixel units comprises a first sub-pixel, a second sub-pixel, and a third sub-pixel which have different colors. In the second direction, a distance between the third sub-pixels is different from a distance between the first sub-pixels and is different from a distance between the second sub-pixels. According to the pixel structure of the present application, the pixel units can be arranged more compact, therefore the pixel pitch is reduced and the PPI is improved.

Abstract: A flexible display includes a flexible display screen and a drive chip. The flexible display screen includes a flexible substrate. The flexible substrate includes a display region and a bonding region. The back of the flexible substrate is adhered with a supporting film and the drive chip is bonded to the bonding region.

Abstract: A flexible display screen and a flexible display apparatus are provided. The flexible display screen includes a display device, a flexible substrate, a support structure and a drive chip. The display device is positioned on the flexible substrate, and the flexible substrate is positioned on the support structure. The support structure further defines a groove thereon to accommodate the drive chip.

Abstract: A pixel structure and a display panel having the pixel structure are disclosed by the present application. The pixel structure includes a plurality of pixel units arranged in an array. The pixel units are arranged respectively along a first direction and a second direction perpendicular to the first direction. Each of the plurality of pixel units comprises a first sub-pixel, a second sub-pixel, and a third sub-pixel which have different colors. In the second direction, a distance between the third sub-pixels is different from a distance between the first sub-pixels and is different from a distance between the second sub-pixels. According to the pixel structure of the present application, the pixel units can be arranged more compact, therefore the pixel pitch is reduced and the PPI is improved.

Abstract: A flexible display includes a flexible display screen and a drive chip. The flexible display screen includes a flexible substrate. The flexible substrate includes a display region and a bonding region. The back of the flexible substrate is adhered with a supporting film and the drive chip is bonded to the bonding region.

Abstract: Embodiments of the present invention generally relate to fiber designs for wavelength tunable ultra-short pulse lasers. More specifically, embodiments of the present invention relate to systems incorporating fiber designs for higher order mode fibers capable of soliton self frequency shifting where a system comprises a first fiber for shifting the wavelength from a pump wavelength to a transfer wavelength and a second fiber for shifting the pulse from the transfer wavelength to an output wavelength. In one embodiment of the present invention, a wavelength tunable short pulse fiber laser system comprises: a pulse generator for providing a pulse having an input wavelength; a mode-converter; a first designed fiber for shifting the pulse from the input wavelength to a transfer wavelength; and a second designed fiber for shifting the pulse from the transfer wavelength to an output wavelength.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor substrate comprising a low-density region and a high-density region, forming a first gate structure in the low-density region and a second gate structure in the high-density region, form an etch stop layer on the first and second gate structures, and forming an interlayer dielectric layer on the etch stop layer and on the semiconductor substrate. The method further includes performing a first chemical mechanical polishing (CMP) process on the etch stop layer to expose a surface of a portion of the etch stop layer disposed on the first gate structure, performing a second CMP process on the etch stop layer to expose a surface of a portion of the etch stop layer disposed on the second gate structure, and performing a third CMP process to completely remove the etch stop layer.

Abstract: Embodiments of the present invention generally relate to optical mode conversion by nonlinear effects. More specifically, embodiments of the present invention relate to nonlinear mode conversion utilizing intermodal four-wave mixing to convert light between modes having different wavelengths for complex applications. In one embodiment of the present invention, a fiber comprises an input end for receiving light in a first mode at a first wavelength, and an output end for outputting light in a desired second mode at a desired second wavelength, wherein the first wavelength and the second wavelength are not the same. In many embodiments, the fiber comprises a higher-order mode fiber.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor substrate comprising a low-density region and a high-density region, forming a first gate structure in the low-density region and a second gate structure in the high-density region, form an etch stop layer on the first and second gate structures, and forming an interlayer dielectric layer on the etch stop layer and on the semiconductor substrate. The method further includes performing a first chemical mechanical polishing (CMP) process on the etch stop layer to expose a surface of a portion of the etch stop layer disposed on the first gate structure, performing a second CMP process on the etch stop layer to expose a surface of a portion of the etch stop layer disposed on the second gate structure, and performing a third CMP process to completely remove the etch stop layer.

Abstract: Embodiments of the present invention generally relate to optical mode conversion using intermodal Cherenkov radiation. More specifically, embodiments of the present invention relate to optical mode conversion utilizing intermodal four-wave mixing to convert light between modes for complex applications, whereby one of the four waves is generated from Cherenkov radiation. In one embodiment of the present invention, a fiber comprises an input end for receiving light in a first mode at a first wavelength, and an output end for outputting light in a desired second mode at a desired second wavelength; wherein the desired second mode is controlled deforming the fiber, such as by bending, during an intermodal Cherenkov radiation process.

Abstract: Embodiments of the present invention generally relate to optical mode conversion by nonlinear effects. More specifically, embodiments of the present invention relate to nonlinear mode conversion utilizing intermodal four-wave mixing to convert light between modes having different wavelengths for complex applications. In one embodiment of the present invention, a fiber comprises an input end for receiving light in a first mode at a first wavelength, and an output end for outputting light in a desired second mode at a desired second wavelength, wherein the first wavelength and the second wavelength are not the same. In many embodiments, the fiber comprises a higher-order mode fiber.

Abstract: Embodiments of the present invention generally relate to fiber designs for wavelength tunable ultra-short pulse lasers. More specifically, embodiments of the present invention relate to systems incorporating fiber designs for higher order mode fibers capable of soliton self frequency shifting where a system comprises a first fiber for shifting the wavelength from a pump wavelength to a transfer wavelength and a second fiber for shifting the pulse from the transfer wavelength to an output wavelength. In one embodiment of the present invention, a wavelength tunable short pulse fiber laser system comprises: a pulse generator for providing a pulse having an input wavelength; a mode-converter; a first designed fiber for shifting the pulse from the input wavelength to a transfer wavelength; and a second designed fiber for shifting the pulse from the transfer wavelength to an output wavelength.