Abstract: A method of forming semiconductor devices having improved work function layers and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a gate dielectric layer on a channel region over a semiconductor substrate; depositing a first p-type work function metal on the gate dielectric layer; performing an oxygen treatment on the first p-type work function metal; and after performing the oxygen treatment, depositing a second p-type work function metal on the first p-type work function metal.

Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric disposed around the first nanostructure; a second high-k gate dielectric being disposed around the second nanostructure; and a gate electrode over the first high-k gate dielectric and the second high-k gate dielectric. A portion of the gate electrode between the first nanostructure and the second nanostructure comprises a first portion of a p-type work function metal filling an area between the first high-k gate dielectric and the second high-k gate dielectric.

Abstract: An EMI shield for use with a cable connector comprises an extension extending from a front portion of the shield. A mating face orthogonal to a horizontal direction of the shield is formed at an end of the extension. The mating face forms a plurality of contacting buds thereon.

Abstract: An EMI shield for use with a cable connector comprises an extension extending from a front portion of the shield. A mating face orthogonal to a horizontal direction of the shield is formed at an end of the extension. The mating face forms a plurality of contacting buds thereon.

Abstract: A collapsible spoon for a canned good includes a spoon member, an extension and a handle pivotally coupled between the spoon member and the extension. Two interlock devices may secure the handle to the spoon member and may secure the extension to the handle for maintaining the extension and the handle and the spoon member in longitudinal alignment. The interlock devices each includes an engagement of an ear with a recess and the other engagement of a projection with an orifice of the ear such that the spoon member and the handle and the extension may be solidly secured together.

Abstract: A snivel removing device includes a housing having a stud extended upward. A valve member is engaged with the stud and includes a normally closed inlet. A nib is engaged with the valve member for engaging with the nose. A plug is slidably engaged in the housing for being moved away from the valve member and for vacuuming the bore of the housing and for drawing snivel into the bore when the valve member is squeezed to open the inlet. The snivel may thus be drawn into the housing and may be removed from the housing when the stem is disengaged from the housing.