Abstract: Various examples of the present invention relate to an electronic device group paging method and an electronic device thereof, and an electronic device operating method can comprise the steps of: converting, in a discontinuous reception (DRX) mode, the electronic device from an idle state into a wakeup state when it is time to check group paging; analyzing, in the wakeup state, the validity of a group paging message received through machine type communication (MTC); and performing a specific function according to the group paging message if the group paging message is valid. In addition, the various examples of the present invention also include the aforementioned example and other examples.

Abstract: Various examples of the present invention relate to an electronic device group paging method and an electronic device thereof, and an electronic device operating method can comprise the steps of: converting, in a discontinuous reception (DRX) mode, the electronic device from an idle state into a wakeup state when it is time to check group paging; analyzing, in the wakeup state, the validity of a group paging message received through machine type communication (MTC); and performing a specific function according to the group paging message if the group paging message is valid. In addition, the various examples of the present invention also include the aforementioned example and other examples.

Abstract: Disclosed is a composition comprising a pyrazino-triazine derivative, an isomer thereof or a pharmaceutically acceptable salt thereof. It is very effective for preventing and treating NSCLC.

Abstract: An oxide thin film transistor (TFT) and a fabrication method thereof are provided. First and second data wirings are made of different metal materials, and an active layer is formed on the first data wiring to implement a short channel, thus enhancing performance of the TFT. The first data wiring in contact with the active layer is made of a metal material having excellent contact characteristics and the other remaining second data wiring is made of a metal material having excellent conductivity, so as to be utilized to a large-scale oxide TFT process. Also, the first and second data wirings may be formed together by using half-tone exposure, simplifying the process.

Abstract: A thin-film transistor array substrate and a fabrication method thereof according to an embodiment of the present invention are disclosed to form an interlayer insulating layer, thereby reducing a failure occurred during the process subsequent to a gate electrode. The thin-film transistor disclosed according to the present invention may include a substrate, a gate electrode formed on the substrate, a planarized insulating layer formed at a lateral surface portion of the gate electrode and at an upper portion of the substrate, a gate insulating layer formed on the planarized insulating layer containing an upper portion of the gate electrode, an active layer formed at an upper portion of the planarized insulating layer located at an upper side of the gate electrode, and a source electrode and a drain electrode formed on the active layer and separated from each other based on a channel region.

Abstract: Disclosed is a composition comprising a pyrazino-triazine derivative, an isomer thereof or a pharmaceutically acceptable salt thereof. It is very effective for preventing and treating NSCLC.

Abstract: An apparatus for providing an electronic letter paper download service in a terminal is provided. The apparatus includes a controller for registering the new letter paper as an available letter paper if a download for the new letter paper is selected and completed, and for displaying letter contents of a new letter on a downloaded letter paper of the new letter when a download of the new letter paper completed.

Abstract: A thin-film transistor array substrate and a fabrication method thereof according to an embodiment of the present invention are disclosed to form an interlayer insulating layer, thereby reducing a failure occurred during the process subsequent to a gate electrode. The thin-film transistor disclosed according to the present invention may include a substrate, a gate electrode formed on the substrate, a planarized insulating layer formed at a lateral surface portion of the gate electrode and at an upper portion of the substrate, a gate insulating layer formed on the planarized insulating layer containing an upper portion of the gate electrode, an active layer formed at an upper portion of the planarized insulating layer located at an upper side of the gate electrode, and a source electrode and a drain electrode formed on the active layer and separated from each other based on a channel region.

Abstract: An oxide thin film transistor (TFT) and a fabrication method thereof are provided. First and second data wirings are made of different metal materials, and an active layer is formed on the first data wiring to implement a short channel, thus enhancing performance of the TFT. The first data wiring in contact with the active layer is made of a metal material having excellent contact characteristics and the other remaining second data wiring is made of a metal material having excellent conductivity, so as to be utilized to a large-scale oxide TFT process. Also, the first and second data wirings may be formed together by using half-tone exposure, simplifying the process.

Abstract: Provided are a method for forming polyurea microcapsules containing a saturated alcohol as a dispersion medium, and microcapsules prepared using the method. According to the method, suspensions, in which microcapsules are dispersed in a saturated alcohol dispersion medium as a core material, may be used to prepare microcapsules. Diverse and fine color expression may be obtained from various response characteristics in the display applications. In addition to superior processibility, excellent thermal stability, solvent resistance, and chemical stability may be achieved by using polyurea in microcapsules as a wall material according to one embodiment of the present invention.