Abstract: A binder solution for an all-solid-state battery, an electrode slurry for an all-solid-state battery including the same and a method of manufacturing an all-solid-state battery using the same, and more particularly to a binder solution for an all-solid-state battery, in which a polymer binder configured such that a non-polar functional group is bonded to the end of a polar functional group is used, whereby the polar functional group is provided by a deprotection mechanism of the polymer binder through a thermal treatment, thus increasing adhesion between electrode materials to thereby improve battery capacity and enabling a wet process to thereby reduce manufacturing costs, an electrode slurry for an all-solid-state battery including the same and a method of manufacturing an all-solid-state battery using the same.

Abstract: Disclosed is an AI avatar coaching system based on a free speech emotion analysis for acting for CS managers.

Abstract: A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

Abstract: Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.

Abstract: A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

Abstract: Provided is a structure of a silicon photomultiplier including an insulating layer to isolate pixels in the silicon photomultiplier and a quench resistor formed on the insulating layer to maximize the size of a light-receiving area, and a method of manufacturing the silicon photomultiplier.

Abstract: Provided are a biosensor and a biomaterial detection apparatus including the same. The biomaterial detection apparatus comprises a light source to provide quantized photons; a substrate spaced apart from the light source; a single photonic sensor layer disposed on the substrate to sense the photons; and an adsorption layer disposed to cover the single photonic sensor layer, allow the photons to pass therethrough, and adsorb a biomaterial between the light source and the substrate.

Abstract: Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.

Abstract: The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.

Abstract: A phase change memory device includes a lower electrode provided on a substrate, an interlayer insulating layer including a contact hole exposing the lower electrode, and covering the substrate, a resistant material pattern filling the contact hole, a phase change pattern interposed between the resistant material pattern and the interlayer insulating layer, and extending between the resistant material pattern and the lower electrode, wherein the resistant material pattern has a higher resistance than the phase change pattern, and an upper electrode in contact with the phase change pattern, the upper electrode being electrically connected to the lower electrode through the phase change pattern.

Abstract: A method includes forming a phase change material layer on a substrate using a deposition process that employs a process gas. The process gas includes a germanium source gas, and the germanium source gas includes at least one of the atomic groups “—N?C?O”, “—N?C?S”, “—N?C?Se”, “—N?C?Te”, “—N?C?Po” and “—C?N”.

Abstract: A probe array may be fabricated by forming probes arranged on a sacrificial substrate, forming a probe substrate above the probes, and removing the sacrificial substrate. In one embodiment, first probes may be two-dimensionally formed in row and column directions on a sacrificial substrate. Second probes may be formed between the first probes arranged in the row direction such that a distance between the first and second probes is smaller than the resolution limit in a lithography process. A probe substrate may be formed on the sacrificial substrate having the first and second probes, and the sacrificial substrate may be removed.

Abstract: A phase change memory device includes a lower electrode provided on a substrate, an interlayer insulating layer including a contact hole exposing the lower electrode, and covering the substrate, a resistant material pattern filling the contact hole, a phase change pattern interposed between the resistant material pattern and the interlayer insulating layer, and extending between the resistant material pattern and the lower electrode, wherein the resistant material pattern has a higher resistance than the phase change pattern, and an upper electrode in contact with the phase change pattern, the upper electrode being electrically connected to the lower electrode through the phase change pattern.

Abstract: The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.

Abstract: A phase-changeable layer and a method of forming the same are disclosed. In the method, a first hydrogen gas is introduced into a reaction chamber into which a substrate is loaded at a first flow rate to form first plasma. A primary cyclic CVD process is carried out using precursors in the reaction chamber to form a lower phase-changeable layer having a first grain size on the substrate. A second hydrogen gas is introduced into the reaction chamber at a second flow rate less than the first flow rate to form second plasma. A secondary cyclic CVD process is carried out using the precursors in the reaction chamber to form an upper phase-changeable layer having a second grain size smaller than the first grain size on the substrate, thereby forming a phase-changeable layer. Thus, the phase-changeable layer may have strong adhesion strength with respect to a lower layer and good electrical characteristics.

Abstract: In one embodiment, a phase change memory device includes an insulation structure over a substrate. The insulation structure ahs an opening defined therethrough. A first layer pattern is formed on sidewalls and a bottom of the opening. A second layer pattern is formed on the first layer pattern and substantially fills the opening.

Abstract: A method includes forming a phase change material layer on a substrate using a deposition process that employs a process gas. The process gas includes a germanium source gas, and the germanium source gas includes at least one of the atomic groups “—N?C?O”, “—N?C?S”, “—N?C?Se”, “—N?C?Te”, “—N?C?Po” and “—C?N”.

Abstract: A probe array may be fabricated by forming probes arranged on a sacrificial substrate, forming a probe substrate above the probes, and removing the sacrificial substrate. In one embodiment, first probes may be two-dimensionally formed in row and column directions on a sacrificial substrate. Second probes may be formed between the first probes arranged in the row direction such that a distance between the first and second probes is smaller than the resolution limit in a lithography process. A probe substrate may be formed on the sacrificial substrate having the first and second probes, and the sacrificial substrate may be removed.

Abstract: Disclosed are methods of forming ferroelectric material layers introducing a plurality of metallorganic source compounds into the reaction chamber, the source compounds being supplied in an appropriate ratio for forming the ferroelectric material. These metallorganic source compounds are, in turn, reacted with a NyOx/O2 oxidant gas mixture in which the NyOxcomponent(s) represents at least 50 volume percent of the oxidant gas. This mixture of metallorganic source compounds and oxidant gas mixture(s) are maintained at a deposition temperature and deposition pressure within the reaction chamber suitable for causing a reaction between the metallorganic source compounds and the oxidant gas for a deposition period sufficient to form the ferroelectric material layer. The resulting ferroelectric material layers exhibit improved uniformity, for example, near the interface with the bottom electrode.

Abstract: In a ferroelectric structure after a first lower electrode film is formed using a first metal nitride, a second lower electrode film is formed on the first lower electrode film using a first metal, a second metal oxide and/or a first alloy. After a ferroelectric layer is formed on the second lower electrode film, a first upper electrode film is formed on the ferroelectric layer using a second alloy. Related devices are also disclosed.