Abstract: The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrated circuits and very large scale integrated circuits. The composition comprises (a) 10 to 40 wt. % of a water-soluble organic amine compound, (b) 40 to 70 wt. % of water-soluble organic solvents selected from a group consisting of dimethyl sulfoxide (DMSO), N-methyl pyrrolidone (NMP) dimethylacetamide (DMAc), dimethylformamide (DMF) and a mixture thereof, (c) 10 to 30 wt. % of water, (d) 5 to 15 wt. % of an organic phenol compound containing two or three hydroxyl groups, (e) 0.5 to 5 wt. % of anion type compound containing perfluoroalkyl, and (f) 0.01 to 1 wt. % of a polyoxyethylenealkylamine ether-type surfactant.

Abstract: The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrated circuits and very large scale integrated circuits. The composition comprises (a) 10 to 40 wt. % of a water-soluble organic amine compound, (b) 40 to 70 wt. % of water-soluble organic solvents selected from a group consisting of dimethyl sulfoxide (DMSO), N-methyl pyrrolidone (NMP) dimethylacetamide (DMAc), dimethylformamide (DMF) and a mixture thereof, (c) 10 to 30 wt. % of water, (d) 5 to 15 wt. % of an organic phenol compound containing two or three hydroxyl groups, (e) 0.5 to 5 wt. % of anion type compound containing perfluoroalkyl, and (f) 0.01 to 1 wt. % of a polyoxyethylenealkylamine ether-type surfactant.

Abstract: The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrated circuits and very large scale integrated circuits. The composition comprises a) 10 to 40 wt. % of water-soluble organic amine compound, b) 10 to 60 wt. % of water-soluble polar organic solvent, c) 10 to 30 wt. % of water, and d) 0.1 to 10 wt. % of organic phenol compound containing two or more hydroxyl groups, and it is characterized in that the water-soluble polar organic solvent is 2-hydroxyisobutyric acid methylester (HBM).

Abstract: The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrate circuits and very large scale integrated circuits. The composition comprises (a) 10 to 40 wt. % of a water-soluble organic amine compound, (b) 40 to 70 wt. % of water-soluble organic solvents selected from a group consisting of dimethylsulfoxide (DMSO), N-methyl pyrrolidone (NMP), dimethylacetamide (DMAc), dimethylformamide (DMF) and a mixture thereof, (c) 10 to 30 wt. % of water, (d) 5 to 15 wt. % of an organic phenol compound containing two or three hydroxyl groups (c) 0.5 to 5 wt. % of a triazole compound, and (f) 0.01 to 1 wt. % of polyoxyethylenealkylamine ether-type surfaetant.

Abstract: The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrated circuits and very large scale integrated circuits. The composition comprises a) 10 to 40 wt. % of water-soluble organic amine compound, b) 10 to 60 wt. % of water-soluble polar organic solvent, c) 10 to 30 wt. % of water, and d) 0.1 to 10 wt. % of organic phenol compound containing two or more hydroxyl groups, and it is characterized in that the water-soluble polar organic solvent is 2-hydroxyisobutyric acid methylester (HBM).

Abstract: A photoresist remover composition including: 10 to 30% by weight amine compound; 20 to 60% by weight glycol series solvent; 20 to 60% by weight polar solvent; and 0.01 to 3% by weight perfluoroalkylethyleneoxide. The performance of the photoresist remover composition in stripping the photoresist residue, which is generated by dry or wet etching, ashing or ion implantation, from a substrate is enhance, and the photoresist remover composition is able to be smoothly applied over a variety of metal layers including an aluminum (Al) layer. Also, the photoresist remover composition corrodes the metal layers very little.

Abstract: The present invention relates to a thinner composition for removing a spin-on-glass coating and a photoresist which are used in the semiconductor components manufacturing process. The present invention provides a mixed thinner composition which is mixed propylene glycol monoalkyl ether with monooxycarbonic acid ester, alkyl ethanoate, and alkyl lactate in a thinner composition for cleaning and photoresist removal applications in the semiconductor components manufacturing process. A thinner composition according to the present invention has the beneficial effects that the production yield can be improved during semiconductor component manufacturing since when the thinner composition is applied after the spin coating process, the undesired coating of the edge or the backside of the substrate can be removed promptly, completely, and effectively, and residual materials adhering to the surface of a substrate which must be reuse can be completely removed so that the substrate can be economically used.

Abstract: A photoresist remover composition used for removing photoresist during the manufacture of semiconductor devices such as integrated circuits (IC), large-scale integrated circuits (LSI) or very large scale integrated circuits (VLSI). The photoresist remover composition includes 10.about.40 wt % of water-soluble amine compound; 20.about.50 wt % of at least one water-soluble polar organic solvent selected from the group consisting of dimetylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), dimethylformamide (DMF) and dimethylimidezolidinone (DMI); 10.about.30 wt % of water; 0.1.about.10 wt % of organic phenol compound containing two or more hydroxy groups; 0.1.about.10 wt % of triazole compound; and 0.01.about.1 wt % of silicone surfactant.