Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes: a first conductivity type nitride semiconductor layer; a V-pit generation layer disposed on the n-type nitride semiconductor layer and having a V-pit; a lower active layer disposed on the V-pit generation layer; an upper active layer disposed on the lower active layer; an intermediate layer disposed between the lower active layer and the upper active layer; a second conductivity type nitride semiconductor layer disposed on the upper active layer, an upper step coverage layer disposed between the second conductivity type semiconductor layer and the upper active layer; and a lower step coverage layer disposed between the intermediate layer and the lower active layer, in which in an electroluminescence spectrum, the light emitting diode emits light having a highest peak intensity in a wavelength range of 500 nm or more in a visible light region.

Abstract: A light emitting device and a light emitting module having the same are provided. A light emitting device includes: a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in which, upon operation, the active layer emits light of a first peak wavelength and light of a second peak wavelength in which the first peak wavelength may be within a range of about 400 nm to about 415 nm, and the second peak wavelength may be greater than or equal to about 440 nm.

Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes: a first conductivity type nitride semiconductor layer; a V-pit generation layer disposed on the n-type nitride semiconductor layer and having a V-pit; a lower active layer disposed on the V-pit generation layer; an upper active layer disposed on the lower active layer; an intermediate layer disposed between the lower active layer and the upper active layer; and a second conductivity type nitride semiconductor layer disposed on the upper active layer, in which the lower active layer and the upper active layer emit light having different peak wavelengths from each other.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.

Abstract: A multi-band light emitting diode is provided. The multi-band light emitting diode includes a first conductivity type semiconductor layer, a V-pit generation layer disposed on the first conductivity type semiconductor layer and having a first V-pit of a first inlet width, a stress relief layer disposed on the V-pit generation layer and providing a second V-pit of a second inlet width greater than the first inlet width of the V-pit on the first V-pit, an active layer disposed on the stress relief layer and including a first active layer region formed on a flat surface of the stress relief layer and a second active layer region formed in the second V-pit, and a second conductivity type semiconductor layer disposed on the active layer.

Abstract: A light emitting diode includes a first conductivity type nitride semiconductor layer, a V-pit generation layer disposed on the first conductivity type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer, a stress relief layer disposed between the V-pit generation layer and the active layer, and a second conductivity type nitride semiconductor layer disposed on the active layer. The stress relief layer and the active layer may be formed in the V-pits, as well as on a flat surface of the V-pit generation layer, and the active layer may emit light of a multi-band spectrum.

Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes an n-type nitride semiconductor layer, a V-pit generation layer, a sub-emission layer, an active layer, and a p-type nitride semiconductor layer. The sub-emission layer is disposed on the n-type nitride semiconductor layer and having V-pits. The active layer is disposed on the sub-emission layer and having a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer. The p-type nitride semiconductor layer is disposed on the active layer. An energy band gap of the sub-emission layer is wider than that of the first well region of the active layer. The light emitting diode emits light having at least three different peak wavelengths at a single chip level.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205?X?0.495 and 0.265?Y?0.450 in CIE color coordinates (X, Y).

Abstract: A light emitting device and a light emitting module having the same are provided. The light emitting module includes a circuit board and a plurality of light emitting units arranged on the circuit board. Each of the plurality of light emitting units includes a light emitting device. The plurality of light emitting units emits light of different colors from one another.

Abstract: A connector assembly includes a first signal pin formed to be in contact with a signal line of a circuit board; a first insulator surrounding the first signal pin; and a first housing accommodating the first signal pin and the first insulator and having a hole at a rear thereof corresponding to the first signal pin, wherein the first housing includes at least one clamping arm disposed on at least one side of the hole, protruding to a rear of the first housing, and having a lower surface formed to be in contact with an upper surface of the circuit board and the connector assembly further includes a ground plate disposed below the clamping arm and having an upper surface formed to be in contact with a lower surface of the circuit board; a clamping plate movably disposed below the ground plate; and a fastening member.

Abstract: The present invention provides a photocatalytic filter module and an air purifier including a base frame in which at least one side is open, a plurality of support frames arranged to traverse the base frame, a plurality of light emitting units arranged on the support frame, and filter units installed in the base frame and disposed to be spaced apart from the light emitting units.

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on an driving current.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light.

Abstract: A compact connector for transmitting super-high-frequency signals is adapted to connect a printed circuit board (PCB) to a single or multiple high-frequency signal lines transmitting super-high frequency signals therethrough. The compact connector includes: a male connector connected to the single or multiple super-high frequency signal lines and including a male connector housing receiving, securing, and protecting terminals of the single or multiple super-high frequency signal lines; and a connector socket mounted on the PCB and receiving the male connector housing fastened to the male connector, wherein the super high-frequency signal line terminals in the male connector are brought into direct contact with and connected to signal line terminal pads formed on the printed circuit board, respectively.

Abstract: Disclosed is a coaxial cable male connector for transmitting super-high frequency signals, which is used in a coaxial cable connector for transmitting super-high frequency signals and is received in a connector socket mounted on a printed circuit board (PCB) to connect multiple coaxial cables to the PCB. The coaxial cable male connector includes: a single or multiple coaxial cables each including an inner conductor, an outer conductor, a dielectric, and a sheath, wherein the outer conductor, the dielectric, and the sheath are partially stripped to expose the inner conductor over a predetermined length, and a terminal of the exposed inner conductor is brought into electrical connect with a signal line terminal pad formed on the PCB; and a shielding can receiving the exposed inner conductors of the single or multiple coaxial cables, securing and protecting ends of the exposed inner conductors, and blocking electromagnetic waves generated from the inner conductors.

Abstract: A method of fabricating a light emitting device includes (i) determining whether each measurement location is defective or not based on a measurement result of the emission wavelength of each location, (ii) forming a test stacked structure by combining one of the first wafers, one of the second wafers, and one of the third wafers in a set of wafers, and (iii) calculating a combination yield of the test stacked structure based on a count of defective measurement locations that overlap in the test stacked structure.

Abstract: A connector assembly includes a first signal pin formed to be in contact with a signal line of a circuit board; a first insulator surrounding the first signal pin; and a first housing accommodating the first signal pin and the first insulator and having a hole at a rear thereof corresponding to the first signal pin, wherein the first housing includes at least one clamping arm disposed on at least one side of the hole, protruding to a rear of the first housing, and having a lower surface formed to be in contact with an upper surface of the circuit board and the connector assembly further includes a ground plate disposed below the clamping arm and having an upper surface formed to be in contact with a lower surface of the circuit board; a clamping plate movably disposed below the ground plate; and a fastening member.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.

Abstract: The present disclosure discloses an anti-reflection coating and a method of forming the same. According to one embodiment of the present disclosure, the anti-reflection coating includes a first layer positioned on a substrate to be spaced apart from the substrate by a first distance and a second layer positioned on the first layer to be spaced apart from the first layer by a second distance. In this case, the first and second layers are a metamaterial forming a structural double layer and are realized as an anomalous dispersive medium that does not absorb incident light. The structural double layer may realize spatiotemporal dispersion that varies depending on an incidence angle using the nonlocality of the electromagnetic wave reaction of incident light.

Abstract: Disclosed herein is a compact connector for transmitting super-high-frequency signals, which is adapted to connect a printed circuit board (PCB) to a single or multiple high-frequency signal lines transmitting super-high frequency signals therethrough. The compact connector includes: a male connector connected to the single or multiple super-high frequency signal lines and comprising a male connector housing receiving, securing, and protecting terminals of the single or multiple super-high frequency signal lines; and a connector socket mounted on the PCB and receiving the male connector housing fastened to the male connector, wherein the super high-frequency signal line terminals in the male connector are brought into direct contact with and connected to signal line terminal pads formed on the printed circuit board, respectively.