Patents by Inventor Ji Hun MUN

Ji Hun MUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230168176
    Abstract: The present invention relates to particle measuring apparatus and a particle measuring method, whereby particle counts per size range can be measured with a high accuracy using a laser power scanning in which lasers of several powers are sequentially irradiated. First, minimum powered lasers capable of measuring particles having more than relevant size are irradiated to a particle measurement space for a predetermined time in response to plural counts of each mutually different particle size, and the counts of particles per size are measured by detecting a scattered light. Furthermore, the counts of particles belonging to each size range can be accurately calculated through an algorithm using the actually measured value.
    Type: Application
    Filed: August 10, 2021
    Publication date: June 1, 2023
    Inventors: Ji Hun MUN, Sang Woo KANG
  • Patent number: 10309011
    Abstract: The present invention relates to a method for preparing a two-dimensional transition metal dichalcogenide and, more particularly, to a method for preparing a highly uniform two-dimensional transition metal dichalcogenide thin film. More specifically, the present invention is directed to a preparation method for a highly uniform two-dimensional transition metal dichalcogenide thin film at low temperature of 500° C. or below.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: June 4, 2019
    Assignee: Korea Research Institute of Standards and Science
    Inventors: Sang Woo Kang, Ji Hun Mun
  • Publication number: 20180105930
    Abstract: The present invention relates to a method for preparing a two-dimensional transition metal dichalcogenide and, more particularly, to a method for preparing a highly uniform two-dimensional transition metal dichalcogenide thin film. More specifically, the present invention is directed to a preparation method for a highly uniform two-dimensional transition metal dichalcogenide thin film at low temperature of 500° C. or below.
    Type: Application
    Filed: July 28, 2016
    Publication date: April 19, 2018
    Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
    Inventors: Sang Woo KANG, Ji Hun MUN