Abstract: An embodiment antioxidant liquid for a fuel cell is provided. The antioxidant liquid is to be charged in a gas diffusion layer of a fuel cell stack, and the antioxidant liquid includes a solvent, an oxide as a first antioxidant dispersed in the solvent, and a salt as a second antioxidant dissolved in the solvent.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes an electrode plate applied with a power; an ion blocker positioned at a bottom side of the electrode plate, which has a plurality of top holes formed thereon, and which is grounded; a shower head positioned at a bottom side of the ion blocker and which has a plurality of bottom holes formed thereon; and a turbulence generating unit configured to have a turbulence space therein, and which is positioned at a space between the ion blocker and the shower head, and wherein the top hole is positioned to overlap the turbulence space when seen from above, and the bottom hole is positioned at an outer side of the turbulence space, and which faces at least one of a bottom surface of the ion blocker and an outer wall of the turbulence generating unit when seen from below.

Abstract: A semiconductor memory device may include a substrate including an active area defined by an element isolation layer on the substrate, a word line crossing the active area and extending in a first direction, a bit line crossing the active area on the substrate and extending in a second direction, and a bit line contact directly connected to the bit line and the active area. The bit line contact may be between the substrate and the bit line. The bit line contact may include a lower bit line contact directly connected to the active area and an upper bit line contact on and in contact with the lower bit line contact. A width of an upper surface of the lower bit line contact in the second direction may be greater than a width of a lower surface of the upper bit line contact in the second direction.

Abstract: A semiconductor memory device including a substrate including an active area defined by an element isolation layer, a bit line extending in a first direction on the substrate, a storage contact on each of both sides of the bit line and connected to the active area, a storage pad on the storage contact and connected to the storage contact and an information storage portion on the storage pad and connected to the storage pad, wherein the storage contact includes a lower storage contact and an upper storage contact on the lower storage contact, at least a portion of the lower storage contact is in the substrate, an entire upper surface of the lower storage contact is in contact with an entire lower surface of the upper storage contact, and each of the lower storage contact and the upper storage contact includes a semiconductor material may be provided.