Patents by Inventor Ji-Hunny Jung

Ji-Hunny Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of measuring a silicon thin film, method of detecting defects in a silicon thin film, and silicon thin film defect detection device
    Patent number: 9140742
    Abstract: A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.
    Type: Grant
    Filed: February 13, 2013
    Date of Patent: September 22, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Alexander Voronov, Seok-Ho Lee, Ji-Hunny Jung, Kyung-Hoe Heo, Gyoo-Wan Han
  • METHOD OF MEASURING A SILICON THIN FILM, METHOD OF DETECTING DEFECTS IN A SILICON THIN FILM, AND SILICON THIN FILM DEFECT DETECTION DEVICE
    Publication number: 20130265078
    Abstract: A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.
    Type: Application
    Filed: February 13, 2013
    Publication date: October 10, 2013
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Alexander Voronov, Seok-Ho Lee, Ji-Hunny Jung, Kyung-Hoe Heo, Gyoo-Wan Han