Abstract: A device for height adjustment and swivel of a seat for a vehicle has a structure in which a first motor for height adjustment of the seat, a first reduction gear device for increasing output torque of the first motor, and a lifting device configured to lift or lower the seat by being connected to the first reduction gear device are stacked in a vertical direction, and a second motor for driving of seat swivel, a second reduction gear device for increasing output torque of the second motor, a brake device configured to stop the seat are vertically stacked between a bottom of the seat and the first motor, in order to adjust the height of the seat, enable accurate swiveling, and carry out a monopost function of the seat.

Abstract: A power swivel apparatus of a seat for a vehicle includes a motor having an eccentric shaft, a reduction gear device connected to the eccentric shaft of the motor, a brake device configured such that braking of the brake device is released by eccentric rotational force of the reduction gear at a time of driving the motor and the brake device exhibits braking force configured to stop the seat at a time of stopping driving of the motor, and a swivel plate connected to the brake device and configured to transmit rotational force so as to swivel the seat.

Abstract: The present invention relates to a novel pyrimidine derivative, and a composition for preventing or treating neurodegenerative diseases and cancer, comprising same, the pyrimidine derivative having a LRRK2 protein inhibitory activity, and effectively passing through a blood-brain barrier (BBB) so as to be effectively used as a pharmaceutical composition for preventing or treating neurodegenerative diseases and cancer.

Abstract: The present disclosure relates to an organic light emitting diode including a first electrode; a second electrode facing the first electrode; and a first emitting part including a first blue emitting layer, a second blue emitting layer, an electron transporting layer and positioned between the first and second electrode, wherein the first blue emitting layer includes a first host and a first dopant, and the second blue emitting layer includes a second host and a second dopant, wherein the first host is an anthracene derivative having a first deuteration ratio, and the second host is an anthracene derivative having a second deuteration ratio smaller than the first deuteration ratio, wherein the first dopant is a first compound represented by Formula 3, and wherein the first electron transporting layer includes an electron transporting material represented by Formula 9.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: The present invention relates to an organic light emitting diode including first and second electrodes facing each other; and a first emitting part including a first blue emitting layer, a second blue emitting layer, an electron transporting layer and positioned between the first and second electrode, wherein the first blue emitting layer includes a first host and a first dopant, and the second blue emitting layer includes a second host and a second dopant, wherein the first host is an anthracene derivative having a first deuteration ratio, and the second host is an anthracene derivative having a second deuteration ratio smaller than the first deuteration ratio, wherein the first dopant is a first compound represented by Formula 3, and wherein the first electron transporting layer includes at least one of a first electron transporting material represented by Formula 9 and a second electron transporting material represented by Formula 10.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is firmed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: A vertical memory device includes a substrate having a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, and forming a stepped structure in the connection region, a first metal line dividing the plurality of gate electrode layers and connected to the cell array region and the connection region of the substrate, and a second metal line dividing a portion of the plurality of gate electrode layers and connected to the connection region of the substrate. A depth of a lower end portion of the second metal line may be greater than a depth of a lower end portion of the first metal line in the cell array region, based on an upper surface of the substrate.

Abstract: A method of controlling energy supply in a fuel cell vehicle includes storing an output current of a fuel cell as a pre-limited current when a cell voltage ratio reaches a minimum cell voltage ratio, setting a limited output current of the fuel cell as the pre-limited current when the cell voltage ratio reaches a hazard cell voltage ratio, connecting first and second high-voltage batteries to a main bus terminal in parallel when the cell voltage ratio reaches the hazard cell voltage ratio, and outputting a supplementary current from the second high-voltage battery by an insufficient amount of the output current of the fuel cell for the pre-limited current, and a system for performing the same.

Abstract: A vertical memory device includes a substrate having a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, and forming a stepped structure in the connection region, a first metal line dividing the plurality of gate electrode layers and connected to the cell array region and the connection region of the substrate, and a second metal line dividing a portion of the plurality of gate electrode layers and connected to the connection region of the substrate. A depth of a lower end portion of the second metal line may be greater than a depth of a lower end portion of the first metal line in the cell array region, based on an upper surface of the substrate.

Abstract: A vertical memory device includes a substrate having a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, and forming a stepped structure in the connection region, a first metal line dividing the plurality of gate electrode layers and connected to the cell array region and the connection region of the substrate, and a second metal line dividing a portion of the plurality of gate electrode layers and connected to the connection region of the substrate. A depth of a lower end portion of the second metal line may be greater than a depth of a lower end portion of the first metal line in the cell array region, based on an upper surface of the substrate.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: A vertical memory device includes a substrate having a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, and forming a stepped structure in the connection region, a first metal line dividing the plurality of gate electrode layers and connected to the cell array region and the connection region of the substrate, and a second metal line dividing a portion of the plurality of gate electrode layers and connected to the connection region of the substrate. A depth of a lower end portion of the second metal line may be greater than a depth of a lower end portion of the first metal line in the cell array region, based on an upper surface of the substrate.

Abstract: A method of controlling energy supply in a fuel cell vehicle includes storing an output current of a fuel cell as a pre-limited current when a cell voltage ratio reaches a minimum cell voltage ratio, setting a limited output current of the fuel cell as the pre-limited current when the cell voltage ratio reaches a hazard cell voltage ratio, connecting first and second high-voltage batteries to a main bus terminal in parallel when the cell voltage ratio reaches the hazard cell voltage ratio, and outputting a supplementary current from the second high-voltage battery by an insufficient amount of the output current of the fuel cell for the pre-limited current, and a system for performing the same.

Abstract: A semiconductor device and a method for fabricating the same selectively forms a nitride layer having high tensile stress in an NMOS transistor area, to thereby form a strained-silicon structure in an NMOS channel region, whereby electron mobility is improved and drain current is increased. The semiconductor device includes an isolation region that, electrically isolates an N-type MOS transistor area from a P-type MOS transistor area, and a nitrade layer formed on an entire upper surface of a substrate, wherein the nitrade layer has silicon ions (Si+) selectively implanted in the P-type MOS transistor area.

Abstract: A method for manufacturing a CMOS image sensor is provided. A metal line can be formed over a semiconductor substrate including a transistor structure. Dangling bonding on the surface of the semiconductor substrate can be removed after forming the metal line by injecting a preset amount of hydrogen (H) atoms on the surface of the semiconductor substrate. Then, a thermal treatment can be performed on the resulting structure.