Abstract: The present application relates to a composition for a gelled food having a plurality of layers and including a gelling agent which includes (a) at least one selected from agar and carrageenan, and (b) locust bean gum, and to a gelled food having a plurality of layers and including the above-described composition for a gelled food.

Abstract: The present application relates to a composition for a gelled food including vegetable cream, and a gelling agent which includes agar and guar gum, a gelled food including the composition for a gelled food, a method for preparing a composition for a gelled food, the method including (A) mixing a gelling agent which includes agar and guar gum in water to prepare a gelled product and (B) mixing the gelled product with vegetable cream to prepare a mixture, and a method for producing a gelled food, the method including heat sterilizing a composition for a gelled food produced by the method for producing a composition for a gelled food.

Abstract: An ultraviolet light emitting diode is provided to comprise an n-type semiconductor layer disposed on a substrate; light emitting elements disposed on the n-type semiconductor layer, each comprising an active layer and a p-type semiconductor layer; an n-type ohmic contact layer contacting the n-type semiconductor layer around the micro light emitting elements; p-type ohmic contact layers contacting the p-type semiconductor layers, respectively; an n-bump electrically connecting to the n-type ohmic contact layer; and a p-bump electrically connected to the p-type ohmic contact layers, wherein each of the n-bump and the p-bump is disposed across over a plurality of micro light emitting elements. The micro light emitting elements may be arranged over a wide area of the substrate, and thus light output can be improved and a forward voltage may be lowered, in addition, the n-bump and the p-bump may be formed relatively widely.

Abstract: An ultraviolet light emitting diode is provided to comprise an n-type semiconductor layer disposed on a substrate; light emitting elements disposed on the n-type semiconductor layer, each comprising an active layer and a p-type semiconductor layer; an n-type ohmic contact layer contacting the n-type semiconductor layer around the micro light emitting elements; p-type ohmic contact layers contacting the p-type semiconductor layers, respectively; an n-bump electrically connecting to the n-type ohmic contact layer; and a p-bump electrically connected to the p-type ohmic contact layers, wherein each of the n-bump and the p-bump is disposed across over a plurality of micro light emitting elements. The micro light emitting elements may be arranged over a wide area of the substrate, and thus light output can be improved and a forward voltage may be lowered, in addition, the n-bump and the p-bump may be formed relatively widely.