Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Abstract: A display device includes a first semiconductor layer disposed on a substrate; a first insulating layer disposed on the first semiconductor layer; a scan line disposed on the first insulating layer; a second insulating layer on the scan line; an inverted scan line on the second insulating layer; a third insulating layer disposed on the inverted scan line; a second semiconductor layer disposed on the third insulating layer; a fourth insulating layer disposed on the second semiconductor layer; an initializing voltage line disposed on the fourth insulating layer and overlapping the scan line; a first transistor including a channel disposed in the first semiconductor layer and receiving a gate signal through the scan line; and a second transistor including a channel disposed in the second semiconductor layer and receiving a gate signal through the inverted scan line.

Abstract: A display device includes a display portion including a first surface, from which light is emitted in a first direction, and a second surface opposite to the first surface, a first optical portion disposed on the first surface, and a second optical portion disposed on the first surface to be spaced apart from the first optical portion in a second direction crossing the first direction. Each of the first and second optical portions includes a multi-channel lens through which the light from the first surface passes, a first infrared light source, a first camera, and a first lens frame coupled to the multi-channel lens in the first direction to support at least a portion of the multi-channel lens. The first lens frame may include a first recess structure in which the first infrared light source is disposed and a second recess structure in which the first camera is disposed.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Abstract: The present disclosure relates to a method of fabricating a perovskite solar cell, including: forming an electron transport layer on a substrate; forming a light absorbing layer containing a perovskite material on the electron transport layer; forming a hole transport layer on the light absorbing layer; and forming an electrode on the hole transport layer. Herein, the forming of the light absorbing layer is performed by impregnating the substrate on which the electron transport layer is formed in a nonpolar solvent and performing a heat treatment thereto.