Patents by Inventor Ji-hyun Hur
Ji-hyun Hur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9929239Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.Type: GrantFiled: February 23, 2016Date of Patent: March 27, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-soo Lee, Myoung-jae Lee, Seong-ho Cho, Mohammad Rakib Uddin, David Seo, Moon-seung Yang, Sang-moon Lee, Sung-hun Lee, Ji-hyun Hur, Eui-chul Hwang
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Publication number: 20160172450Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.Type: ApplicationFiled: February 23, 2016Publication date: June 16, 2016Inventors: Dong-soo LEE, Myoung-jae LEE, Seong-ho CHO, Mohammad Rakib UDDIN, David SEO, Moon-seung YANG, Sang-moon LEE, Sung-hun LEE, Ji-hyun HUR, Eui-chul HWANG
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Patent number: 9306008Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.Type: GrantFiled: March 13, 2014Date of Patent: April 5, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-soo Lee, Myoung-Jae Lee, Seong-ho Cho, Mohammad Rakib Uddin, David Seo, Moon-seung Yang, Sang-moon Lee, Sung-hun Lee, Ji-hyun Hur, Eui-chul Hwang
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Patent number: 9105837Abstract: Bipolar memory cells and a memory device including the same are provided, the bipolar memory cells include two bipolar memory layers having opposite programming directions. The two bipolar memory layers may be connected to each other via an intermediate electrode interposed therebetween. The two bipolar memory layers may have the same structure or opposite structures.Type: GrantFiled: February 15, 2011Date of Patent: August 11, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chang-jung Kim, Young-bae Kim, Ji-hyun Hur, Dong-soo Lee, Man Chang, Chang-bum Lee, Seung-ryul Lee
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Patent number: 9099304Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.Type: GrantFiled: March 14, 2014Date of Patent: August 4, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-soo Lee, Eui-chul Hwang, Seong-ho Cho, Myoung-jae Lee, Sang-moon Lee, Sung-hun Lee, Mohammad Rakib Uddin, David Seo, Moon-seung Yang, Ji-hyun Hur
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Publication number: 20150061088Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.Type: ApplicationFiled: March 13, 2014Publication date: March 5, 2015Inventors: Dong-soo LEE, Myoung-Jae LEE, Seong-ho CHO, Mohammad Rakib Uddin, David SEO, Moon-seung YANG, Sang-moon LEE, Sung-hun LEE, Ji-hyun HUR, Eui-chul HWANG
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Publication number: 20150060766Abstract: In another embodiment, the tunneling field effect TFET includes a source electrode, a drain electrode, and a channel layer between the source electrode and the drain electrode. A first junction surface is between the source electrode and the channel layer, and a second junction surface is between the drain electrode and the channel layer. A gate is on the channel layer. The gate has first and second side surfaces. The first side surface is at the source electrode side and the second side surface is at the drain electrode side. The first side surface extends from the channel layer.Type: ApplicationFiled: August 28, 2014Publication date: March 5, 2015Inventor: Ji-hyun HUR
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Publication number: 20150028458Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.Type: ApplicationFiled: March 14, 2014Publication date: January 29, 2015Applicant: Samsung Electronics Co., Ltd.Inventors: Dong-soo Lee, Eui-chul Hwang, Seong-ho Cho, Myoung-jae Lee, Sang-moon Lee, Sung-hun Lee, Rakib Uddin Mohammad, David Seo, Moon-seung Yang, Ji-hyun Hur
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Patent number: 8861253Abstract: A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device.Type: GrantFiled: December 7, 2011Date of Patent: October 14, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Man Chang, Young-bae Kim, Chang-jung Kim, Myoung-jae Lee, Ji-hyun Hur, Dong-soo Lee, Chang-bum Lee, Seung-ryul Lee
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Patent number: 8773888Abstract: According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device.Type: GrantFiled: August 21, 2012Date of Patent: July 8, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Man Chang, Young-bae Kim, Chang-jung Kim, Myoung-jae Lee, Seong-jun Park, Ji-hyun Hur, Dong-soo Lee, Chang-bum Lee, Seung-ryul Lee
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Patent number: 8772750Abstract: A non-volatile memory element includes: a memory layer disposed between a first electrode and a second electrode; and a buffer layer disposed between the memory layer and the first electrode. The memory layer includes a first material layer and a second material layer. The first material layer and the second material layer are configured to exchange ionic species to change a resistance state of the memory layer.Type: GrantFiled: May 25, 2011Date of Patent: July 8, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Chang-bum Lee, Chang-jung Kim, Young-bae Kim, Myoung-jae Lee, Ji-hyun Hur, Dong-soo Lee, Man Chang, Seung-ryul Lee
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Patent number: 8634011Abstract: Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel.Type: GrantFiled: October 14, 2010Date of Patent: January 21, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Ji-hyun Hur, Sung-ho Park, I-hun Song, Sang-hun Jeon
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Patent number: 8611131Abstract: According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device.Type: GrantFiled: November 30, 2011Date of Patent: December 17, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Man Chang, Young-bae Kim, Chang-jung Kim, Myoung-jae Lee, Seong-jun Park, Ji-hyun Hur, Dong-soo Lee, Chang-bum Lee, Seung-ryul Lee
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Patent number: 8455933Abstract: An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.Type: GrantFiled: June 7, 2010Date of Patent: June 4, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-ho Park, I-hun Song, Ji-hyun Hur, Sang-hun Jeon
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Patent number: 8445882Abstract: Example embodiments, relate to a non-volatile memory element and a memory device including the same. The non-volatile memory element may include a memory layer having a multi-layered structure between two electrodes. The memory layer may include first and second material layers and may show a resistance change characteristic due to movement of ionic species therebetween. The first material layer may be an oxygen-supplying layer. The second material layer may be an oxide layer having a multi-trap level.Type: GrantFiled: May 24, 2011Date of Patent: May 21, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-soo Lee, Man Chang, Young-bae Kim, Myoung-jae Lee, Chang-bum Lee, Seung-ryul Lee, Chang-jung Kim, Ji-hyun Hur
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Publication number: 20130051125Abstract: According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device.Type: ApplicationFiled: August 21, 2012Publication date: February 28, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Man CHANG, Young-bae KIM, Chang-jung KIM, Myoung-jae LEE, Seong-jun PARK, Ji-hyun HUR, Dong-soo LEE, Chang-bum LEE, Seung-ryul LEE
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Publication number: 20130043451Abstract: Nonvolatile memory elements and memory devices including the nonvolatile memory elements. A nonvolatile memory element may include a memory layer between two electrodes, and the memory layer may have a multi-layer structure. The memory layer may include a base layer and an ionic species exchange layer and may have a resistance change characteristic due to movement of ionic species between the base layer and the ionic species exchange layer. The ionic species exchange layer may have a multi-layer structure including at least two layers. The nonvolatile memory element may have a multi-bit memory characteristic due to the ionic species exchange layer having the multi-layer structure. The base layer may be an oxygen supplying layer, and the ionic species exchange layer may be an oxygen exchange layer.Type: ApplicationFiled: March 27, 2012Publication date: February 21, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung-ryul Lee, Young-bae Kim, Chang-jung Kim, Myoung-jae Lee, Ji-hyun Hur, Dong-soo Lee, Man Chang, Chang-bum Lee, Kyung-min Kim
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Patent number: 8294134Abstract: A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.Type: GrantFiled: November 18, 2010Date of Patent: October 23, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Hyuk-soon Choi, Ji-hyun Hur, Yoon-ho Kang, Hyo-sug Lee, Jai-kwang Shin, Jae-joon Oh
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Publication number: 20120230080Abstract: According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device.Type: ApplicationFiled: November 30, 2011Publication date: September 13, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Man Chang, Young-bae Kim, Chang-jung Kim, Myoung-jae Lee, Seong-jun Park, Ji-hyun Hur, Dong-soo Lee, Chang-bum Lee, Seung-ryul Lee
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Publication number: 20120161821Abstract: A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device.Type: ApplicationFiled: December 7, 2011Publication date: June 28, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Man CHANG, Young-bae KIM, Chang-jung KIM, Myoung-jae LEE, Ji-hyun HUR, Dong-soo LEE, Chang-bum LEE, Seung-ryul LEE