Patents by Inventor Ji-Ling WU

Ji-Ling WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11955430
    Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer over a substrate, forming a metal layer in the first dielectric layer, forming an etch stop layer on a surface of the first dielectric layer and the metal layer, removing portions of the metal layer and the etch stop layer to form a recess in the metal layer, and forming a tungsten plug in the recess. The recess is spaced apart from a bottom surface of the etch stop layer.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Hsuan Lin, Hsi Chung Chen, Ji-Ling Wu, Chih-Teng Liao
  • Publication number: 20220319993
    Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer over a substrate, forming a metal layer in the first dielectric layer, forming an etch stop layer on a surface of the first dielectric layer and the metal layer, removing portions of the metal layer and the etch stop layer to form a recess in the metal layer, and forming a tungsten plug in the recess. The recess is spaced apart from a bottom surface of the etch stop layer.
    Type: Application
    Filed: March 31, 2021
    Publication date: October 6, 2022
    Inventors: Chih-Hsuan LIN, Hsi Chung CHEN, Ji-Ling WU, Chih-Teng LIAO