Patents by Inventor Ji Man Cho

Ji Man Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240138260
    Abstract: The present disclosure relates to a plurality of host materials, an organic electroluminescent compound, and an organic electroluminescent device comprising the same. By comprising a specific combination of host compounds and/or an organic electroluminescent compound according to the present disclosure as an organic electroluminescent material, an organic electroluminescent device having low driving voltage and/or high luminous efficiency and/or long lifespan characteristics can be provided.
    Type: Application
    Filed: September 8, 2023
    Publication date: April 25, 2024
    Inventors: Ji-Song JUN, Hong-Se OH, Dong-Hyung LEE, Sang-Hee CHO, Du-Yong PARK, Hyun-Woo KANG, Jin-Man KIM
  • Patent number: 8947982
    Abstract: A method and apparatus for setting an alarm in a portable terminal are provided. The method includes receiving a message for requesting the setting of the alarm from a peer terminal, confirming a right of the peer terminal to set an alarm, determining, if the peer terminal has the right to set the alarm, an alarm generation time according to a transmission time of the alarm setting request message, and setting the alarm for the alarm generation time.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: February 3, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun-Hyuk Lee, Ho-Cheol Seo, San Cho, Ji-Man Cho
  • Patent number: 6835588
    Abstract: The present invention provides a micro inertia sensor and a method of manufacturing the same, the micro inertia sensor includes a lower glass substrate; a lower silicon including a first border, a first fixed point and a side movement sensing structure; an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and an sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure; a bonded layer by a eutectic bonding between the upper silicon and the lower silicon; and a upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed, thereby aiming at the miniaturization of the product and the simplification of the process.
    Type: Grant
    Filed: December 12, 2003
    Date of Patent: December 28, 2004
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Seung Do An, Kyoung Soo Kim, Ji Man Cho
  • Patent number: 6789423
    Abstract: The present invention provides a micro inertia sensor and a method of manufacturing the same, the micro inertia sensor includes a lower glass substrate; a lower silicon including a first border, a first fixed point and a side movement sensing structure; an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and an sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure; a bonded layer by a eutectic bonding between the upper silicon and the lower silicon; and a upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed, thereby aiming at the miniaturization of the product and the simplification of the process.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: September 14, 2004
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Seung Do An, Kyoung Soo Kim, Ji Man Cho
  • Publication number: 20040158439
    Abstract: A method and a magnetic field and acceleration sensor for simultaneously sensing magnetism and acceleration are disclosed, the method comprising the steps of applying a current to first and second movable structures which are movable in a first direction, spaced from fixedly arranged first and second sensing electrodes, respectively, and arranged in a plane perpendicular to the first direction, applying magnetic field and/or acceleration signals to the first and second movable structures, detecting capacitance changes from the first and second sensing electrodes, the capacitance changes being caused by the distance change between the first and second movable structures and the first and second sensing electrodes, respectively, outputting a magnetic field signal by subtracting a signal detected from the second sensing electrode from a signal detected from the first sensing electrode, and outputting an acceleration signal by adding the signals detected from the first and second sensing electrodes.
    Type: Application
    Filed: July 2, 2003
    Publication date: August 12, 2004
    Inventors: Kyoung Soo Kim, Seung Do An, Ji man Cho
  • Publication number: 20040126920
    Abstract: The present invention provides a micro inertia sensor and a method of manufacturing the same, the micro inertia sensor includes a lower glass substrate; a lower silicon including a first border, a first fixed point and a side movement sensing structure; an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and an sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure; a bonded layer by a eutectic bonding between the upper silicon and the lower silicon; and a upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed, thereby aiming at the miniaturization of the product and the simplification of the process.
    Type: Application
    Filed: December 12, 2003
    Publication date: July 1, 2004
    Inventors: Seung Do An, Kyoung Soo Kim, Ji Man Cho
  • Publication number: 20030183009
    Abstract: The present invention provides a micro inertia sensor and a method of manufacturing the same, the micro inertia sensor includes a lower glass substrate; a lower silicon including a first border, a first fixed point and a side movement sensing structure; an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and an sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure; a bonded layer by a eutectic bonding between the upper silicon and the lower silicon; and a upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed, thereby aiming at the miniaturization of the product and the simplification of the process.
    Type: Application
    Filed: December 27, 2002
    Publication date: October 2, 2003
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Seung Do An, Kyoung Soo Kim, Ji Man Cho