Patents by Inventor Ji-Man YOO

Ji-Man YOO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices and methods of manufacturing the same
    Patent number: 9905664
    Abstract: A semiconductor device includes a substrate, a tunnel insulation pattern on the substrate, a charge storage pattern on the tunnel insulation pattern, a dielectric pattern having a width smaller than a width of the charge storage pattern on the charge storage pattern, a control gate having a width greater than the width of the dielectric pattern on the dielectric pattern, and a metal-containing gate on the control gate.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: February 27, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun Namkoong, Dong-Kyum Kim, Jung-Hwan Kim, Jung Geun Jee, Han-Vit Yang, Ji-Man Yoo
  • SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    Publication number: 20170278936
    Abstract: A semiconductor device includes a substrate, a tunnel insulation pattern on the substrate, a charge storage pattern on the tunnel insulation pattern, a dielectric pattern having a width smaller than a width of the charge storage pattern on the charge storage pattern, a control gate having a width greater than the width of the dielectric pattern on the dielectric pattern, and a metal-containing gate on the control gate.
    Type: Application
    Filed: May 24, 2017
    Publication date: September 28, 2017
    Inventors: Hyun NAMKOONG, Dong-Kyum KIM, Jung-Hwan KIM, Jung Geun JEE, Han-Vit YANG, Ji-Man YOO
  • Semiconductor devices
    Patent number: 9698231
    Abstract: A semiconductor device includes a substrate, a tunnel insulation pattern on the substrate, a charge storage pattern on the tunnel insulation pattern, a dielectric pattern having a width smaller than a width of the charge storage pattern on the charge storage pattern, a control gate having a width greater than the width of the dielectric pattern on the dielectric pattern, and a metal-containing gate on the control gate.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: July 4, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun Namkoong, Dong-Kyum Kim, Jung-Hwan Kim, Jung Geun Jee, Han-Vit Yang, Ji-Man Yoo
  • SEMICONDUCTOR DEVICES
    Publication number: 20160293618
    Abstract: A semiconductor device includes a substrate, a tunnel insulation pattern on the substrate, a charge storage pattern on the tunnel insulation pattern, a dielectric pattern having a width smaller than a width of the charge storage pattern on the charge storage pattern, a control gate having a width greater than the width of the dielectric pattern on the dielectric pattern, and a metal-containing gate on the control gate.
    Type: Application
    Filed: February 3, 2016
    Publication date: October 6, 2016
    Inventors: Hyun NAMKOONG, Dong-Kyum KIM, Jung-Hwan KIM, Jung Geun JEE, Han-Vit YANG, Ji-Man YOO