Abstract: The present invention relates to a high-temperature superconducting rotating machine system equipped with a fixed type cryostat and a vaporized cryogen re-use cooling structure.

Abstract: Provided is a testing apparatus for an active current control-type non-contact superconductive exciter having a hybrid magnet installed therein, and a high-temperature superconductive rotating machine using same. Provided is principally characterized by having a hybrid magnet, in a module form, in which a permanent magnet, a DC electromagnet and an AC electromagnet are used together, wherein the hybrid magnet is set in a plurality along the circumferential direction of a ring-shaped iron stator, is formed to correspond to the outer side of a rotor, having a high-temperature superconductive tape (or a second-generation high-temperature superconductive wire), of a non-contact superconductive exciter, and thus enables a selected operation (charging, discharging and the like) before and after rotation of a driving motor.

Abstract: Disclosed is a semiconductor device. The semiconductor device includes a lower electrode disposed on a substrate; a first lower interfacial film disposed on the lower electrode; a dielectric film disposed on the first lower interfacial film; a first upper interfacial film disposed on the dielectric film; and an upper electrode disposed on the first upper interfacial film, wherein each of the first lower interfacial film and the first upper interfacial film is a conductive single film, and the first lower interfacial film and the first upper interfacial film include the same metal element, wherein electronegativity of the metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than electronegativity of a metal element included in the dielectric film.

Abstract: Provided are a thermoelectric material, a method of fabricating the same, and a thermoelectric device. The thermoelectric material includes a first material layer including a chalcogen element; and a second material layer including a reaction compound between the chalcogen element and a metal element, wherein the thermoelectric material has a structure in which the first material layer is inserted in the second material layer.

Abstract: Provided are a thermoelectric material, a method of fabricating the same, and a thermoelectric device. The thermoelectric material includes a first material layer including a chalcogen element; and a second material layer including a reaction compound between the chalcogen element and a metal element, wherein the thermoelectric material has a structure in which the first material layer is inserted in the second material layer.