Abstract: A radio frequency circuit with font routing to replace a resistor includes a routing layer and a ground layer. The routing layer includes a first pad, a second pad and a font routing unit. The second pad is corresponding to the first pad. The font routing unit is connected between the first pad and the second pad, and has a trace width. The trace width is less than a 50 ohm trace width. The ground layer is disposed below the routing layer and is separated from the routing layer by a height. The font routing unit has a second equivalent impedance at the radio frequency, the second equivalent impedance is determined according to the trace width, the height and the radio frequency, and the second equivalent impedance is the same or similar to a first equivalent impedance.

Abstract: A radio frequency circuit with font routing to replace a resistor includes a routing layer and a ground layer. The routing layer includes a first pad, a second pad and a font routing unit. The second pad is corresponding to the first pad. The font routing unit is connected between the first pad and the second pad, and has a trace width. The trace width is less than a 50 ohm trace width. The ground layer is disposed below the routing layer and is separated from the routing layer by a height. The font routing unit has a second equivalent impedance at the radio frequency, the second equivalent impedance is determined according to the trace width, the height and the radio frequency, and the second equivalent impedance is the same or similar to a first equivalent impedance.

Abstract: An excitation source planning method for an electrical stimulation is proposed to plan an excitation source. A layout importing step is performed to drive a processing unit to import a PCB layout to an electromagnetic simulation software module. A port establishing step is performed to set the excitation source to be vertically disposed between a signal layer and a main ground layer. A model generating step is performed to perform the electrical simulation according to the excitation source to generate a three-dimensional simulation model corresponding to the PCB layout. When the signal layer is not electrically connected to the main ground layer, the electromagnetic simulation software module executes an extending step. The extending step is performed to provide a first metal unit to be connected to the signal layer, and reset the excitation source to be vertically disposed between the first metal unit and the main ground layer.

Abstract: An excitation source planning method for an electrical stimulation is proposed to plan an excitation source. A layout importing step is performed to drive a processing unit to import a PCB layout to an electromagnetic simulation software module. A port establishing step is performed to set the excitation source to be vertically disposed between a signal layer and a main ground layer. A model generating step is performed to perform the electrical simulation according to the excitation source to generate a three-dimensional simulation model corresponding to the PCB layout. When the signal layer is not electrically connected to the main ground layer, the electromagnetic simulation software module executes an extending step. The extending step is performed to provide a first metal unit to be connected to the signal layer, and reset the excitation source to be vertically disposed between the first metal unit and the main ground layer.

Abstract: A fabricating method of transistors includes providing a substrate with numerous transistors thereon. Each of the transistors includes a gate structure. A gap is disposed between gate structures adjacent to each other. Later, a protective layer and a first dielectric layer are formed in sequence to cover the substrate and the transistors and to fill in the gap. Next, numerous buffering particles are formed to contact the first dielectric layer. The buffering particles do not contact each other. Subsequently, a second dielectric layer is formed to cover the buffering particles. After that, a first planarization process is performed to remove part of the first dielectric layer, part of the second dielectric layer and buffering particles by taking the protective layer as a stop layer, wherein a removing rate of the second dielectric layer is greater than a removing rate of the buffering particles during the first planarization process.

Abstract: A fabricating method of transistors includes providing a substrate with numerous transistors thereon. Each of the transistors includes a gate structure. A gap is disposed between gate structures adjacent to each other. Later, a protective layer and a first dielectric layer are formed in sequence to cover the substrate and the transistors and to fill in the gap. Next, numerous buffering particles are formed to contact the first dielectric layer. The buffering particles do not contact each other. Subsequently, a second dielectric layer is formed to cover the buffering particles. After that, a first planarization process is performed to remove part of the first dielectric layer, part of the second dielectric layer and buffering particles by taking the protective layer as a stop layer, wherein a removing rate of the second dielectric layer is greater than a removing rate of the buffering particles during the first planarization process.

Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.

Abstract: The present invention discloses a metal gate process. A sacrificial nitride layer is introduced during the fabrication of metal gates. The gate height can be well controlled by introducing the sacrificial nitride layer. Further, the particle fall-on problem can be effectively solved.

Abstract: An alignment mark structure includes a dielectric layer. A trench is embedded in the dielectric layer. An alignment mark fills up the trench, wherein the alignment mark includes a metal layer covering the trench. A first material layer covers and contacts the metal layer. A second material layer covers and contacts the first material layer. A third material layer covers and contacts the second material layer. The first material layer, the second material layer, and the third material layer independently includes silicon nitride, silicon oxide, tantalum-containing material, aluminum-containing material, titanium-containing material, or a low-k dielectric having a dielectric constant smaller than 2.7, and a reflectance of the first material layer is larger than a reflectance of the second material layer, the reflectance of the second material layer is larger than a reflectance of the third material layer.

Abstract: An alignment mark structure includes a dielectric layer. A trench is embedded in the dielectric layer. An alignment mark fills up the trench, wherein the alignment mark includes a metal layer covering the trench. A first material layer covers and contacts the metal layer. A second material layer covers and contacts the first material layer. A third material layer covers and contacts the second material layer. The first material layer, the second material layer, and the third material layer are independently comprises silicon nitride, silicon oxide, tantalum-containing material, aluminum-containing material, titanium-containing material, or a low-k dielectric having a dielectric constant smaller than 2.7, and a reflectance of the first material layer is larger than a reflectance of the second material layer, the reflectance of the second material layer is larger than a reflectance of the third material layer.

Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.

Abstract: A semiconductor device package includes a substrate, a component on a surface of the substrate, a package body encapsulating the component, and an electromagnetic interference (EMI) shield conformally formed on the package body, where the EMI shield has a side portion defining an opening.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a silicon layer on a substrate; forming a metal silicon nitride layer on the silicon layer; forming a stress layer on the metal silicon nitride layer; performing a thermal treatment process; removing the stress layer; forming a conductive layer on the metal silicon nitride layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.

Abstract: A semiconductor device package includes a substrate, a component on a surface of the substrate, a package body encapsulating the component, and an electromagnetic interference (EMI) shield conformally formed on the package body, where the EMI shield has a side portion defining an opening.