Abstract: A semiconductor device includes a substrate including an active region, a gate structure on the substrate, a plurality of channel layers on the active region, spaced apart from each other and surrounded by the gate structure, a source/drain region in a region at which the active region is recessed, on at least one side of the gate structure, and connected to the channel layers, and a contact plug partially recessing the source/drain region from an upper surface of the source/drain region, electrically connected to the source/drain region, and including a metal-semiconductor compound layer along a recessed surface of the source/drain region and a contact conductor layer on the metal-semiconductor compound layer, wherein the metal-semiconductor compound layer has a first thickness on a side surface of the contact conductive layer and a second thickness on a bottom surface of the contact plug, the second thickness being smaller than the first thickness.

Abstract: A semiconductor device includes a substrate, active regions extending in a first horizontal direction on the substrate, and including first and second active regions spaced apart from each other in a second horizontal direction perpendicular to the first horizontal direction, and third and fourth active regions spaced apart from each other in the second horizontal direction, first to fourth source/drain regions on the first to fourth active regions, first to fourth contact plugs connected to the first to fourth source/drain regions, a first isolation insulating pattern disposed between the first and second contact plugs, and a second isolation insulating pattern disposed between the third and fourth contact plugs, wherein a first length of the first isolation insulating pattern is smaller than a second length of the second isolation insulating pattern in a vertical direction.

Abstract: A semiconductor device includes an active region extending in a first direction; a device isolation layer on side surfaces of the active region and defining the active region; a gate structure intersecting the active region on the active region and extending in a second direction; source/drain regions in regions in which the active region is recessed, on both sides of the gate structure; first protective layers between the device isolation layer and the gate structure; and a buried interconnection line below the source/drain regions and connected to one of the source/drain regions through an upper surface of the buried interconnection line.

Abstract: A method of preventing or treating rejection of a transplanted cell, tissue, or organ in an animal by administering to the animal a composition comprising an effective amount of mesenchymal stem cells and/or at least one anti-inflammatory protein or biologically active fragment, derivative, or analogue thereof.