Abstract: Anode materials comprising various compositions of strontium iron cobalt molybdenum oxide (SFCM) for low- or intermediate-temperature solid oxide fuel cell (SOFCs) are provided. These materials offer high conductivity achievable at intermediate and low temperatures and can be used to prepare the anode layer of a SOFC. A method of making a low- or intermediate temperature SOFC having an anode layer including SFCM is also provided.

Abstract: In various embodiments, a solid oxide fuel cell features a functional layer for reducing interfacial resistance between the cathode and the solid electrolyte.

Abstract: In various embodiments, a solid oxide fuel cell features a functional layer for reducing interfacial resistance between the cathode and the solid electrolyte.

Abstract: The disclosure relates to solid oxide fuel cell (SOFC) anode materials that comprise various compositions of chromate based oxide materials. These materials offer high conductivity achievable at intermediate and low temperatures and can be used to prepare the anode layer of a SOFC. A method of making a low- or intermediate-temperature SOFC having an anode layer comprising a chromate based oxide material is also provided.

Abstract: In various embodiments, a solid oxide fuel cell features a functional layer for reducing interfacial resistance between the cathode and the solid electrolyte.

Abstract: In various embodiments, a solid oxide fuel cell is fabricated in part by disposing a functional layer between the cathode and the solid electrolyte.

Abstract: Anode materials comprising various compositions of strontium iron cobalt molybdenum oxide (SFCM) for low- or intermediate-temperature solid oxide fuel cell (SOFCs) are provided. These materials offer high conductivity achievable at intermediate and low temperatures and can be used to prepare the anode layer of a SOFC. A method of making a low- or intermediate temperature SOFC having an anode layer including SFCM is also provided.

Abstract: In various embodiments, a solid oxide fuel cell is fabricated in part by disposing a functional layer between the cathode and the solid electrolyte.

Abstract: A semiconductor device formed on a semiconductor substrate includes: an epitaxial layer overlaying the semiconductor substrate; a drain formed on back of the semiconductor substrate; a drain region that extends into the epitaxial layer; an active region comprising: a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and the body; and an active region contact electrode disposed within the active region contact trench; and an island region under the active region contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer; wherein the active region contact trench has a non-uniform depth.

Abstract: Anode materials comprising various compositions of strontium iron cobalt molybdenum oxide (SFCM) for low- or intermediate-temperature solid oxide fuel cell (SOFCs) are provided. These materials offer high conductivity achievable at intermediate and low temperatures and can be used to prepare the anode layer of a SOFC. A method of making a low- or intermediate temperature SOFC having an anode layer including SFCM is also provided.

Abstract: Fabricating a semiconductor device comprises: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body in the epitaxial layer; forming a source embedded in the body; forming a contact trench that extends through the source and at least part of the body; disposing an implant at least along a contact trench wall; and disposing an epitaxial enhancement portion below the contact trench and in contact with the implant.

Abstract: A wireless image processing system includes a splitter software and processing apparatus configured to receive or forward picture element data. Image data in a computer may be split, wirelessly transmitted, and processed to form an any size integrity image/video display on a building or structure, meanwhile no physical damage may be done on or to the building or no physical cabling obstacle for image or video dividing and combining at a lighting show.

Abstract: A semiconductor device formed on a semiconductor substrate includes: an epitaxial layer overlaying the semiconductor substrate; a drain formed on back of the semiconductor substrate; a drain region that extends into the epitaxial layer; an active region comprising: a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and the body; and an active region contact electrode disposed within the active region contact trench; and an island region under the active region contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer; wherein the active region contact trench has a non-uniform depth.

Abstract: In various embodiments, a solid oxide fuel cell features a functional layer for reducing interfacial resistance between the cathode and the solid electrolyte.

Abstract: Fabricating a semiconductor device includes: forming a first gate trench and a second gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the first gate trench to form a first gate and depositing gate material in the second gate trench to form a second gate; forming a body; forming a source; forming an active region contact trench that extends through the source and the body, and a gate contact trench within the second gate; forming an island region under the active region contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer; and disposing a first electrode within the active region contact trench and a second electrode within the gate contact trench.

Abstract: In various embodiments, a solid oxide fuel cell features a functional layer for reducing interfacial resistance between the cathode and the solid electrolyte.

Abstract: A bi-directional switch device includes two inter-digitated back-to-back vertical metal oxide semiconductor field effect transistors (MOSFETs) formed on a substrate with their drains connected together, but otherwise isolated from each other.

Abstract: A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising a substrate of a first conductivity type, a body region of a second conductivity type, a gate electrode formed in a gate trench extending in the body region and substrate, a lightly doped source region and a heavily doped source region formed in the body region, and a source contact extending to the body region formed in a source contact trench next to the gate trench. The lightly doped source region is extended deeper in the body region than the heavily doped source region. The lightly doped source region is adjacent to the source contact trench. A ballast resistor is formed at the lightly doped source region between the heavily doped source region and the body region and a Schottky diode is formed at a contact between the source contact and the lightly doped source region.

Abstract: In various embodiments, a solid oxide fuel cell is fabricated in part by disposing a functional layer between the cathode and the solid electrolyte.

Abstract: A wireless image processing system includes a splitter software and processing apparatus configured to receive or forward picture element data. Image data in a computer may be split, wirelessly transmitted, and processed to form an any size integrity image/video display on a building or structure, meanwhile no physical damage may be done on or to the building or no physical cabling obstacle for image or video dividing and combining at a lighting show.