Abstract: Embodiments of this application disclose a stator, a stator manufacturing method, a motor, and an electric vehicle. The stator includes: a stator tooth part, where a plurality of stator tooth parts are arranged at intervals along a circumferential direction; and a stator yoke part, where the stator yoke part is disposed along a circumferential direction of the stator tooth part, and the circumferential direction is a circumferential direction around a central axis of the stator; where the stator tooth part and the stator yoke part are integrally formed by an oriented silicon steel sheet, and a grain direction of the formed oriented silicon steel sheet points to the central axis of the stator along a radial direction. Therefore, the stator tooth part and the stator yoke part are formed by using one material, and there is no need to splice two materials, thereby reducing process costs.

Abstract: Embodiments of this application disclose a stator, a stator manufacturing method, a motor, and an electric vehicle. The stator includes: a stator tooth part, where a plurality of stator tooth parts are arranged at intervals along a circumferential direction; and a stator yoke part, where the stator yoke part is disposed along a circumferential direction of the stator tooth part, and the circumferential direction is a circumferential direction around a central axis of the stator; where the stator tooth part and the stator yoke part are integrally formed by an oriented silicon steel sheet, and a grain direction of the formed oriented silicon steel sheet points to the central axis of the stator along a radial direction. Therefore, the stator tooth part and the stator yoke part are formed by using one material, and there is no need to splice two materials, thereby reducing process costs.

Abstract: A semiconductor power device comprises a plurality of power transistor cells each having a trenched gate disposed in a gate trench wherein the trenched gate comprising a shielding bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed in a top portion of the gate trench by an inter-electrode insulation layer. At least one of the transistor cells includes the shielding bottom electrode functioning as a source-connecting shielding bottom electrode electrically connected to a source electrode of the semiconductor power device and at least one of the transistor cells having the shielding bottom electrode functioning as a gate-connecting shielding bottom electrode electrically connected to a gate metal of the semiconductor power device.