Abstract: A light-emitting device includes a substrate, a semiconductor structure, and an insulating reflective layer. The substrate has an upper surface and a lower surface. The semiconductor structure is disposed on the upper surface of the substrate. A projection of the semiconductor structure on the upper surface of the substrate has an outer periphery spaced apart a distance from an outer periphery of the upper surface of the substrate. The insulating reflective layer covers at least a part of the semiconductor structure and has an extending portion extending outwardly from the semiconductor structure and covering a part of the upper surface of the substrate. A peripheral end of the extending portion of the insulating reflective layer has an inclined lateral surface, and an included angle defined between the inclined lateral surface and the upper surface of the substrate is not less than 60°.

Abstract: A light-emitting diode includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack has a first surface and a second surface opposite to each other. The DBR structure is disposed on one of the first surface and the second surface of the semiconductor light-emitting stack, and includes at least one set of first light-transmitting layers and at least one set of second light-transmitting layers stacked on each other in the first direction. The first light-transmitting layers has interface roughness greater than that of the second light-transmitting layers.

Abstract: A composite reflective structure includes at least one dielectric multilayer element which includes a first dielectric layer having a first refractive index, a second dielectric layer having a second refractive index, and a stress buffer layer interposed therebetween. The first refractive index is greater than the second refractive index. Also disclosed herein is a light-emitting diode chip including the abovementioned composite reflective structure and a light-emitting diode device including the light-emitting diode chip.

Abstract: The present disclosure provides a manufacturing method for an LED display screen. The method includes preparing a batch of LED chips of the same or different specification; picking up the LED chips illogically according to a random sampling method, and arranging the picked led chips in sequence; and packaging and assembling the LED chips arranged in sequence to form the LED display screen. The LED display screen includes an area which includes a plurality of LED chips, and at least two adjacent LED chips of the plurality of LED chips are of different specifications, the specification of the LED chip comprising a specification of at least one of color and brightness.