Abstract: Provided is a high-speed 3D imaging system using continuous-wave THz beam scan, and more particularly, a high-speed 3D imaging system using continuous-wave THz beam scan capable of acquiring a 3D image for a sample at a high speed and high precision by measuring a signal reflected from a sample using the continuous-wave THz beam generated from a wavelength-fixed laser and a wavelength-swept laser and having a frequency varying at a high speed to obtain depth direction information on a sample and performing a 2D scan on the sample using a THz beam scanner.

Abstract: Provided is a high-speed 3D imaging system using continuous-wave THz beam scan, and more particularly, a high-speed 3D imaging system using continuous-wave THz beam scan capable of acquiring a 3D image for a sample at a high speed and high precision by measuring a signal reflected from a sample using the continuous-wave THz beam generated from a wavelength-fixed laser and a wavelength-swept laser and having a frequency varying at a high speed to obtain depth direction information on a sample and performing a 2D scan on the sample using a THz beam scanner.

Abstract: Provided is an apparatus for real-time non-contact non-destructive thickness measurement using a terahertz wave, and more particularly, an apparatus for real-time non-contact non-destructive thickness measurement using a terahertz wave, which is capable of measuring a thickness of a sample by irradiating a terahertz continuous wave, which is generated from a wavelength-fixed laser and a wavelength-swept laser and of which the frequency is changed at a high speed, to the sample and measuring the terahertz wave transmitting or reflected from the sample.

Abstract: Provided is an apparatus for real-time non-contact non-destructive thickness measurement using a terahertz wave, and more particularly, an apparatus for real-time non-contact non-destructive thickness measurement using a terahertz wave, which is capable of measuring a thickness of a sample by irradiating a terahertz continuous wave, which is generated from a wavelength-fixed laser and a wavelength-swept laser and of which the frequency is changed at a high speed, to the sample and measuring the terahertz wave transmitting or reflected from the sample.

Abstract: A layer is formed on a semiconductor wafer in an apparatus having a processing chamber, a transferring chamber, and a wafer boat. The boat having the semiconductor wafer thereon is rotated in the transferring chamber. While the boat is rotated, the boat is transferred between the transferring chamber and the processing chamber and a reaction gas is provided to the processing chamber to form the layer on the wafer.

Abstract: A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

Abstract: A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

Abstract: A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

Abstract: A layer is formed on a semiconductor wafer in an apparatus having a processing chamber, a transferring chamber, and a wafer boat. The boat having the semiconductor wafer thereon is rotated in the transferring chamber. While the boat is rotated, the boat is transferred between the transferring chamber and the processing chamber and a reaction gas is provided to the processing chamber to form the layer on the wafer.

Abstract: A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.