Patents by Inventor Ji Shiliang

Ji Shiliang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR STRUCTURE AND FORMING METHOD FOR THEREOF
    Publication number: 20220102520
    Abstract: A semiconductor structure and a forming method thereof are provided, where one form of a forming method includes: providing a substrate, where the substrate includes a first region and a second region that are adjacent, stack structures are formed on the first region and the second region, and the stack structures of the first region and the second region and the substrate form a first opening; forming first dielectric layers on a bottom surface and side walls of the first opening, where a second opening is provided between the first dielectric layers; forming a second dielectric layer in the second opening; forming a source/drain doped layer; removing the first dielectric layer between the source/drain doped layer and the second dielectric layer, and forming a groove exposing a side wall, which is close to the second dielectric layer, of the source/drain doped layer; and forming a contact plug in the groove.
    Type: Application
    Filed: September 9, 2021
    Publication date: March 31, 2022
    Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Ji SHILIANG, Xiao XINGYU, Zhang HAIYANG
  • SEMICONDUCTOR STRUCTURE PROVIDING FOR AN INCREASED PATTERN DENSITY ON A SUBSTRATE AND METHOD FOR FORMING SAME
    Publication number: 20200211848
    Abstract: Disclosed are a semiconductor structure and a method for forming the same.
    Type: Application
    Filed: August 16, 2019
    Publication date: July 2, 2020
    Applicants: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Ji SHILIANG, Zhang YIYING, Zhang HAIYANG
  • Semiconductor structure providing for an increased pattern density on a substrate and method for forming same
    Patent number: 10685838
    Abstract: Disclosed are a semiconductor structure and a method for forming the same.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: June 16, 2020
    Assignees: Semiconductor Manufacturing (Beijing) International Corporation, Semiconductor Manufacturing (Shanghai) International Corporation
    Inventors: Ji Shiliang, Zhang Yiying, Zhang Haiyang