Abstract: Example embodiments are directed to a switching device of an active display device and a method of driving the switching device, such that electrical reliability of the active display device is improved. The switching device of the active display device includes a plurality of thin film transistors (TFTs) that are connected in series. Except for a refresh time duration during which the plurality of TFTs of the switching device are simultaneously turned ON, a positive voltage is applied to at least one of the plurality of TFTs of the switching device so that a reliability of the switching device may be improved.

Abstract: Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.

Abstract: Example embodiments are directed to a switching device of an active display device and a method of driving the switching device, such that electrical reliability of the active display device is improved. The switching device of the active display device includes a plurality of thin film transistors (TFTs) that are connected in series. Except for a refresh time duration during which the plurality of TFTs of the switching device are simultaneously turned ON, a positive voltage is applied to at least one of the plurality of TFTs of the switching device so that a reliability of the switching device may be improved.

Abstract: Example embodiments are directed to a switching device of an active display device and a method of driving the switching device, such that electrical reliability of the active display device is improved. The switching device of the active display device includes a plurality of thin film transistors (TFTs) that are connected in series. Except for a refresh time duration during which the plurality of TFTs of the switching device are simultaneously turned ON, a positive voltage is applied to at least one of the plurality of TFTs of the switching device so that a reliability of the switching device may be improved.

Abstract: A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

Abstract: An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

Abstract: Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.

Abstract: Provided are a driving device for a unit pixel of an organic light emitting display having an improved structure and a method of manufacturing the same.

Abstract: An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract: Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.

Abstract: A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

Abstract: Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.

Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

Abstract: A display device including an oxide semiconductor thin film transistor is provided. The display device includes at least one thin film transistor, and at least one storage capacitor. The storage capacitor includes a storage electrode formed of a transparent oxide semiconductor, and a pixel electrode over the storage electrode. The pixel electrode may be separated from the storage electrode by a desired distance.