Abstract: A light emitting element includes an N-type semiconductor layer including a zinc oxide semiconductor, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer. The active layer has a quantum well including a barrier layer and a well layer including zinc oxide.

Abstract: A light-emitting element and a display device including the same are provided. The light-emitting element includes a first semiconductor layer doped with a first-type dopant, a second semiconductor layer doped with a second-type dopant, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer. The light-emitting layer includes at least one first material layer and at least one second material layer, wherein the at least one first material layer includes a zinc oxide (ZnO)-based material, and the at least one second material layer includes a gallium nitride (GaN)-based material.

Abstract: A method for manufacturing a light emitting element includes forming a first semiconductor structure including a first semiconductor layer doped with a first conductivity type dopant disposed on a base substrate, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type dopant; forming a second semiconductor structure spaced apart from another second semiconductor structure on the base substrate by etching the first semiconductor structure in a direction perpendicular to a surface of the base substrate; and activating a second conductivity type dopant in the second semiconductor layer of the second semiconductor structure to form a light emitting element core.