Abstract: A method of manufacture comprises a mask process correction (MPC) and verifying MPC accuracy. MPC may be performed on mask tape-out (MTO) data describing a mask pattern to obtain mask process corrected data. MPC may be performed to address a deviation between the MTO data and a mask to be manufactured. Verification of the MPC may be performed by generating a two-dimensional (2D) contour of mask pattern elements based on the mask process corrected data. When MPC has been verified, the mask process corrected data may be used to manufacture a mask and a semiconductor device.

Abstract: A method of manufacture comprises a mask process correction (MPC) and verifying MPC accuracy. MPC may be performed on mask tape-out (MTO) data describing a mask pattern to obtain mask process corrected data. MPC may be performed to address a deviation between the MTO data and a mask to be manufactured. Verification of the MPC may be performed by generating a two-dimensional (2D) contour of mask pattern elements based on the mask process corrected data. When MPC has been verified, the mask process corrected data may be used to manufacture a mask and a semiconductor device.

Abstract: A method of correcting flare includes measuring flare of a test pattern, calculating point spread functions (PSFs) of the flare as a function of distance, and correcting the flare using corresponding PSFs for an influence range of the flare. The influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and corresponding PSFs are separately applied to the first and second ranges to correct the flare.

Abstract: A method of correcting flare includes measuring flare of a test pattern, calculating point spread functions (PSFs) of the flare as a function of distance, and correcting the flare using corresponding PSFs for an influence range of the flare. The influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and corresponding PSFs are separately applied to the first and second ranges to correct the flare.

Abstract: A correction method and a system thereof automatically perform a measurement and an analysis for a photomask critical dimension (CD), to satisfy a desired CD uniformity and a desired mean-to-target (MTT) data. A correction for a portion where a CD error has occurred may be performed.

Abstract: A correction method and a system thereof automatically perform a measurement and an analysis for a photomask critical dimension (CD), to satisfy a desired CD uniformity and a desired mean-to-target (MTT) data. A correction for a portion where a CD error has occurred may be performed.

Abstract: A photo mask includes a transparent substrate, a main pattern, and scattering bars. The image of the main pattern is that which is transferred to photosensitive material by rays of exposure light transmitted by the photo mask during a photolithographic process. The scattering bars are formed by etching the transparent substrate and the image of the scattering bars is not transferred to the photosensitive material by the exposure light. Each of the scattering bars is formed to such a width and depth as to improve normalized image log slope (NILS) of an aerial image of the rays that have been transmitted by the photo mask.

Abstract: A mask, and a method for fabricating the mask, for optically transcribing a pattern corresponding to integrated circuits on a semiconductor substrate by using an exposure device. The mask has a plurality of features corresponding to circuit elements with at least one recessed corner defined by two edges. The mask includes a plurality of proximity correcting auxiliary features, each having two extension parts which extend in parallel along and spaced away from each of two edges defining a recessed corner. The extension parts are bent at a same angle corresponding to the recessed corner, to be connected to each other. The proximity correcting auxiliary features have polygonal shapes having predetermined widths. Since polygonal auxiliary features are provided corresponding to the recessed corner, auxiliary features are symmetrically maintained, reducing a number of auxiliary features. The amount of data representing the whole mask pattern can thus be reduced.

Abstract: A mask, and a method for fabricating the mask, for optically transcribing a pattern corresponding to integrated circuits on a semiconductor substrate by using an exposure device. The mask has a plurality of features corresponding to circuit elements with at least one recessed corner defined by two edges. The mask includes a plurality of proximity correcting auxiliary features, each having two extension parts which extend in parallel along and spaced away from each of two edges defining a recessed corner. The extension parts are bent at a same angle corresponding to the recessed corner, to be connected to each other. The proximity correcting auxiliary features have polygonal shapes having predetermined widths. Since polygonal auxiliary features are provided corresponding to the recessed corner, auxiliary features are symmetrically maintained, reducing a number of auxiliary features. The amount of data representing the whole mask pattern can thus be reduced.