Patents by Inventor Ji-Su Ahn
Ji-Su Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240082263Abstract: The present invention relates to a pharmaceutical composition for combined administration of melatonin and prostaglandin E2 (PGE2) for the treatment of intestinal epithelial injury diseases, and it is confirmed that when intestinal epithelial organoids are treated in combination with melatonin and PGE2, the expression of revival stem cell markers increases more than when the two substances are treated alone, and therefore it can be usefully used as a composition for preventing, treating or improving intestinal epithelial injury diseases.Type: ApplicationFiled: May 7, 2023Publication date: March 14, 2024Applicant: PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATIONInventors: Hyung-Sik KIM, Yoo Jin SEO, Ji-Su AHN
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Publication number: 20140363936Abstract: A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.Type: ApplicationFiled: June 12, 2014Publication date: December 11, 2014Inventors: Byoung-Keon Park, Tae-Hoon Yang, Jin-Wook Seo, Ki-Yong Lee, Maxim Lisachenko, Bo-Kyung Choi, Dae-Woo Lee, Kil-Won Lee, Dong-Hyun Lee, Jong-Ryuk Park, Ji-Su Ahn, Young-Dae Kim, Heung-Yeol Na, Min-Jae Jeong, Yun-Mo Chung, Jong-Won Hong, Eu-Gene Kang, Seok-RaK Chang, Jae-Wan Jung, Sang-Yon Yoon
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Patent number: 8871616Abstract: A thin film transistor (TFT), an OLED device having the TFT and a method of fabricating the same and a method of fabricating an organic light emitting diode (OLED) display device that includes the TFT. The method of fabricating a TFT includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer pattern on the buffer layer, forming a metal layer on an entire surface of the substrate, forming a semiconductor layer by applying an electrical field to the metal layer to crystallize the amorphous silicon layer pattern, forming source and drain electrodes connected to the semiconductor layer by patterning the metal layer, forming a gate insulating layer on the entire surface of the substrate, forming a gate electrode on the gate insulating layer to correspond to the semiconductor layer and forming a protective layer on the entire surface of the substrate.Type: GrantFiled: March 5, 2010Date of Patent: October 28, 2014Assignee: Samsung Display Co., Ltd.Inventors: Ji-Su Ahn, Won-Pil Lee
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Patent number: 8546248Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.Type: GrantFiled: July 7, 2011Date of Patent: October 1, 2013Assignee: Samsung Display Co., Ltd.Inventors: Yun-Mo Chung, Ki-Yong Lee, Min-Jae Jeong, Jin-Wook Seo, Jong-Won Hong, Heung-Yeol Na, Eu-Gene Kang, Seok-Rak Chang, Tae-Hoon Yang, Ji-Su Ahn, Young-Dae Kim, Byoung-Keon Park, Kil-Won Lee, Dong-Hyun Lee, Sang-Yon Yoon, Jong-Ryuk Park, Bo-Kyung Choi, Maxim Lisachenko
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Patent number: 8519405Abstract: The present invention relates generally to a thin film transistor, an organic light emitting diode (OLED) display including the same, and manufacturing methods of them. The thin film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; an inter layer dielectric disposed on the entire surface of the substrate; and source and drain electrodes disposed on the inter layer dielectric and connected to the semiconductor layer, and in which the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer, and a manufacturing method thereof.Type: GrantFiled: May 6, 2011Date of Patent: August 27, 2013Assignee: Samsung Display Co., Ltd.Inventors: Ji-Su Ahn, Kwang-Nam Kim, Jae-Yong Lee, Beong-Ju Kim, In-Young Jung
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Patent number: 8486195Abstract: An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.Type: GrantFiled: February 26, 2010Date of Patent: July 16, 2013Assignee: Samsung Display Co., Ltd.Inventors: Heung-Yeol Na, Ki-Yong Lee, Min-Jae Jeong, Jong-Won Hong, Yun-Mo Chung, Eu-Gene Kang, Seok-Rak Chang, Jin-Wook Seo, Ji-Su Ahn, Tae-Hoon Yang, Young-Dae Kim, Byoung-Keon Park, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung, Jong-Ryuk Park, Bo-Kyung Choi, Sang-Hyun Yun
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Patent number: 8420513Abstract: A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.Type: GrantFiled: March 14, 2012Date of Patent: April 16, 2013Assignee: Samsung Display Co., Ltd.Inventors: Ji-Su Ahn, Eui-Hoon Hwang, Cheol-Ho Yu, Kwang-Nam Kim, Sung-Chul Kim
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Patent number: 8404529Abstract: A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.Type: GrantFiled: March 27, 2012Date of Patent: March 26, 2013Assignee: Samsung Display Co., Ltd.Inventors: Ji-Su Ahn, Sung-Chul Kim, Beong-Ju Kim
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Patent number: 8405088Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, source and drain electrodes directly on the semiconductor layer, each of the source and drain electrodes including at least one hole therethrough, a gate insulating layer on the substrate, and a gate electrode on the gate insulating layer and corresponding to the semiconductor layer.Type: GrantFiled: March 12, 2010Date of Patent: March 26, 2013Assignee: Samsung Display Co., Ltd.Inventors: Ji-Su Ahn, Hoon-Kee Min
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Patent number: 8343796Abstract: A method of fabricating a thin film transistor includes patterning the amorphous semiconductor layer to form an amorphous semiconductor layer pattern, forming a gate electrode corresponding to the amorphous semiconductor layer pattern on a gate insulating layer, forming an interlayer insulating layer on the entire surface of the substrate, forming a first contact hole partially exposing the amorphous semiconductor layer pattern, forming a second contact hole partially exposing the gate electrode, and forming a metal layer on the entire surface of the substrate. The method also includes applying an electrical field to the metal layer such that a semiconductor layer is formed by crystallization of the amorphous semiconductor layer pattern, and patterning the metal layer to form source and drain electrodes that are insulated from the gate electrode and that are electrically connected with the semiconductor layer through the first contact hole.Type: GrantFiled: August 9, 2011Date of Patent: January 1, 2013Assignee: Samsung Display Co., Ltd.Inventors: Ji-Su Ahn, Sung-Chul Kim
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Patent number: 8278716Abstract: A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.Type: GrantFiled: December 30, 2009Date of Patent: October 2, 2012Assignee: Samsung Display Co., Ltd.Inventors: Byoung-Keon Park, Dong-Hyun Lee, Kil-Won Lee, Tae-Hoon Yang, Jin-Wook Seo, Ki-Yong Lee, Ji-Su Ahn, Maxim Lisachenko
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Publication number: 20120184074Abstract: A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.Type: ApplicationFiled: March 27, 2012Publication date: July 19, 2012Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.Inventors: Ji-Su AHN, Sung-Chul KIM, Beong-Ju KIM
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Publication number: 20120171823Abstract: A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.Type: ApplicationFiled: March 14, 2012Publication date: July 5, 2012Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.Inventors: Ji-Su Ahn, Eui-Hoon Hwang, Cheol-Ho Yu, Kwang-Nam Kim, Sung-Chul Kim
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Publication number: 20120097966Abstract: The present invention relates generally to a thin film transistor, an organic light emitting diode (OLED) display including the same, and manufacturing methods of them. The thin film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; an inter layer dielectric disposed on the entire surface of the substrate; and source and drain electrodes disposed on the inter layer dielectric and connected to the semiconductor layer, and in which the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer, and a manufacturing method thereof.Type: ApplicationFiled: May 6, 2011Publication date: April 26, 2012Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.Inventors: Ji-Su Ahn, Kwang-Nam Kim, Jae-Yong Lee, Beong-Ju Kim, In-Young Jung
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Patent number: 8158984Abstract: A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.Type: GrantFiled: July 1, 2009Date of Patent: April 17, 2012Assignee: Samsung Mobile Display Co., Ltd.Inventors: Ji-Su Ahn, Eui-Hoon Hwang, Cheol-Ho Yu, Kwang-Nam Kim, Sung-Chul Kim
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Publication number: 20110300675Abstract: The thin film transistor for an organic light emitting diode includes a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern having first source and drain contact holes, a gate electrode on the gate insulating layer, the gate electrode being between the first source and drain contact holes, an interlayer insulating layer covering the gate electrode, having second source and drain contact holes, source and drain electrode in the second source and drain contact holes, insulated from the gate electrode and electrically connected to the crystalline semiconductor pattern by first and second metal patterns in the first source and drain contact holes, respectively, wherein the gate electrode, the first metal pattern in the first source contact hole and the second metal pattern in the first drain contact hole are each made of a same material.Type: ApplicationFiled: August 9, 2011Publication date: December 8, 2011Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.Inventors: Ji-Su Ahn, Sung-Chul Kim
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Publication number: 20110294267Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, an interlayer insulating layer on the entire surface of the substrate having the gate electrode, a first contact hole and a second contact hole, and source and drain electrodes on the interlayer insulating layer, insulated from the gate electrode, and having a portion connected with the semiconductor layer through the first contact hole. An organic light emitting diode display may include the thin film transistor along with a passivation layer on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode, which are on the passivation layer and electrically connected with the source and drain electrodes.Type: ApplicationFiled: August 9, 2011Publication date: December 1, 2011Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.Inventors: Ji-Su Ahn, Sung-Chul Kim
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Patent number: 8048783Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.Type: GrantFiled: February 26, 2010Date of Patent: November 1, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Yun-Mo Chung, Ki-Yong Lee, Min-Jae Jeong, Jin-Wook Seo, Jong-Won Hong, Heung-Yeol Na, Eu-Gene Kang, Seok-Rak Chang, Tae-Hoon Yang, Ji-Su Ahn, Young-Dae Kim, Byoung-Keon Park, Kil-Won Lee, Dong-Hyun Lee, Sang-Yon Yoon, Jong-Ryuk Park, Bo-Kyung Choi, Maxim Lisachenko
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Publication number: 20110263107Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.Type: ApplicationFiled: July 7, 2011Publication date: October 27, 2011Applicant: Samsung Mobile Display Co., Ltd.Inventors: Yun-Mo CHUNG, Ki-Yong LEE, Min-Jae JEONG, Jin-Wook SEO, Jong-Won HONG, Heung-Yeol NA, Eu-Gene KANG, Seok-Rak CHANG, Tae-Hoon YANG, Ji-Su AHN, Young-Dae KIM, Byoung-Keon PARK, Kil-Won LEE, Dong-Hyun LEE, Sang-Yon YOON, Jong-Ryuk PARK, Bo-Kyung CHOI, Maxim LISACHENKO
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Patent number: 7999261Abstract: A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT including a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer and crystallized using a metal catalyst, and source and drain electrodes disposed on the semiconductor layer and electrically connected to source and drain regions of the semiconductor layer. A second metal is diffused into a surface region of the semiconductor layer, to getter the metal catalyst from a channel region of the semiconductor layer. The second metal can have a lower diffusion coefficient in silicon than the metal catalyst.Type: GrantFiled: January 22, 2009Date of Patent: August 16, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Ji-Su Ahn, Byoung-Keon Park, Tae-Hoon Yang, Jin-Wook Seo, Kil-Won Lee, Ki-Yong Lee, Sung-Chul Kim