Patents by Inventor Ji-Su Min

Ji-Su Min has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NLRP3 PROTEIN DEGRADATION INDUCING COMPOUND
    Publication number: 20250073218
    Abstract: The present invention relates to NLRP3 protein degradation inducing compounds. Specifically, the present invention provides a bifunctional compound in which an NLRP3 protein binding moiety and an E3 ubiquitin ligase binding moiety are connected by a chemical linker, a method for preparing the same, a method for degrading NLRP3 protein using the same, and the use for preventing or treating NLRP3 inflammasome-related diseases.
    Type: Application
    Filed: November 4, 2021
    Publication date: March 6, 2025
    Applicant: UPPTHERA
    Inventors: Soo Hee Ryu, Ji Hoon Ryu, Hwa Jin Lee, Im Suk Min, Han Kyu Lee, Jun Kyu Lee, Ji Su Lee, Su Youn Koh, Seong Hoon Kim
  • CATHODE ACTIVE MATERIAL HAVING CONTROLLED RHEOLOGICAL PROPERTIES FOR A LITHIUM SECONDARY BATTERY
    Publication number: 20250054948
    Abstract: A cathode active material with controlled rheological properties for lithium secondary batteries. In particular, the cathode active material for a lithium secondary battery includes: a core part comprising a lithium metal oxide; and a coating layer covering at least a portion of a surface of the core part and comprising an inorganic compound.
    Type: Application
    Filed: December 5, 2023
    Publication date: February 13, 2025
    Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, WONIK QnC CORPORATION
    Inventors: Je Sik Park, Hong Seok Min, Sung Woo Noh, Jeong Hyun Seo, Im Sul Seo, Ju Yeong Seong, Chung Bum Lim, Hyuk Chun Kwon, Ho Chang Lee, Seong Uk Oh, Ji Su Kim, Jong Hyun Park
  • Memory device driving matching lines according to priority
    Patent number: 10395719
    Abstract: A memory device includes a storage circuit, a first driving circuit, and a second driving circuit. The storage circuit stores first data and compares the first data and second data. The first driving circuit selectively drives a matching line to a first logic state, depending on a comparison result of the first data and the second data by the storage circuit. The second driving circuit drives the matching line to a second logic state regardless of the comparison result.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: August 27, 2019
    Assignees: SAMSUNG ELECTRONICS CO., LTD., RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Cheol Kim, Kee-Won Kwon, Ji-Su Min, Rak-Joo Sung, Sung-gi Ahn
  • MEMORY DEVICE DRIVING MATCHING LINES ACCORDING TO PRIORITY
    Publication number: 20190130958
    Abstract: A memory device includes a storage circuit, a first driving circuit, and a second driving circuit. The storage circuit stores first data and compares the first data and second data. The first driving circuit selectively drives a matching line to a first logic state, depending on a comparison result of the first data and the second data by the storage circuit. The second driving circuit drives the matching line to a second logic state regardless of the comparison result.
    Type: Application
    Filed: June 12, 2018
    Publication date: May 2, 2019
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Cheol Kim, Kee-Won Kwon, Ji-Su Min, Rak-Joo Sung, Sung-gi Ahn