Patents by Inventor JI-WEI HOU

JI-WEI HOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase change memory apparatus
    Patent number: 10840444
    Abstract: A phase change memory apparatus comprises at least one heating layer; and at least one phase change layer comprising a vanadium dioxide layer, wherein each of the at least one phase change layer is set corresponding to each of the at least one heating layer, the at least one heating layer is configured to heat the at least one phase change layer.
    Type: Grant
    Filed: February 2, 2018
    Date of Patent: November 17, 2020
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Ji-Wei Hou, Zhi-Quan Yuan, Kai Liu, Peng Liu, Kai-Li Jiang, Shou-Shan Fan
  • Method for making patterned 2D transition metal dichalcogenides nanomaterials
    Patent number: 10643842
    Abstract: A method for making patterned two dimensional (2D) transition metal dichalcogenides (TMDs) nanomaterials is disclosed. The method includes making a substrate, wherein the substrate has a substrate surface including a first portion surface and a second portion surface, the first portion surface is formed by oxide or nitride, and the second portion surface is formed by mica; applying a mono 2D TMDs nanomaterials; annealing the mono 2D TMDs nanomaterials and the substrate in an oxygen containing gas, the annealing temperature is controlled so that only the part of the 2D TMDs nanomaterials, that is on the second portion surface, is removed by oxidization, and the other part of the 2D TMDs nanomaterials, that is on the first portion surface, is remained to form the patterned 2D TMDs nanomaterials.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: May 5, 2020
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Xue-Wen Wang, Kai Liu, Ji-Wei Hou, Sheng-Zhe Hong
  • METHOD FOR MAKING PATTERNED 2D TRANSITION METAL DICHALCOGENIDES NANOMATERIALS
    Publication number: 20190228966
    Abstract: A method for making patterned two dimensional (2D) transition metal dichalcogenides (TMDs) nanomaterials is disclosed. The method includes making a substrate, wherein the substrate has a substrate surface including a first portion surface and a second portion surface, the first portion surface is formed by oxide or nitride, and the second portion surface is formed by mica; applying a mono 2D TMDs nanomaterials; annealing the mono 2D TMDs nanomaterials and the substrate in an oxygen containing gas, the annealing temperature is controlled so that only the part of the 2D TMDs nanomaterials, that is on the second portion surface, is removed by oxidization, and the other part of the 2D TMDs nanomaterials, that is on the first portion surface, is remained to form the patterned 2D TMDs nanomaterials.
    Type: Application
    Filed: October 19, 2018
    Publication date: July 25, 2019
    Inventors: XUE-WEN WANG, KAI LIU, JI-WEI HOU, SHENG-ZHE HONG
  • Method for writing, reading and erasing data of phase change memory apparatus
    Patent number: 10304533
    Abstract: A phase change memory apparatus comprises at least one heating layer; and at least one phase change layer comprising a vanadium dioxide layer, wherein each of the at least one phase change layer is set corresponding to each of the at least one heating layer, the at least one heating layer is configured to heat the at least one phase change layer.
    Type: Grant
    Filed: February 2, 2018
    Date of Patent: May 28, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Ji-Wei Hou, Zhi-Quan Yuan, Kai Liu, Peng Liu, Kai-Li Jiang, Shou-Shan Fan
  • PHASE CHANGE MEMORY APPARATUS
    Publication number: 20180342673
    Abstract: A phase change memory apparatus comprises at least one heating layer; and at least one phase change layer comprising a vanadium dioxide layer, wherein each of the at least one phase change layer is set corresponding to each of the at least one heating layer, the at least one heating layer is configured to heat the at least one phase change layer.
    Type: Application
    Filed: February 2, 2018
    Publication date: November 29, 2018
    Inventors: JI-WEI HOU, ZHI-QUAN YUAN, KAI LIU, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • METHOD FOR WRITING, READING AND ERASING DATA OF PHASE CHANGE MEMORY APPARATUS
    Publication number: 20180342296
    Abstract: A phase change memory apparatus comprises at least one heating layer; and at least one phase change layer comprising a vanadium dioxide layer, wherein each of the at least one phase change layer is set corresponding to each of the at least one heating layer, the at least one heating layer is configured to heat the at least one phase change layer.
    Type: Application
    Filed: February 2, 2018
    Publication date: November 29, 2018
    Inventors: JI-WEI HOU, ZHI-QUAN YUAN, KAI LIU, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN