Patents by Inventor Ji Woon CHOI

Ji Woon CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240101953
    Abstract: The present application relates to a novel strain of the genus Schizochytrium (Schizochytrium sp.) and a method of producing polyunsaturated fatty acids by using the same. According to one aspect, novel microalgae of the genus Schizochytrium have a high content of fat in biomass, and particularly, a high content of polyunsaturated fatty acids such as docosahexaenoic acid (DHA) and eicosapentaenoic acid (EPA), and therefore, the microalgae, and biomass or bio-oil prepared therefrom, may be useful as a feed source or the like.
    Type: Application
    Filed: November 8, 2021
    Publication date: March 28, 2024
    Inventors: Jung Woon CHOI, Sung Hoon JANG, Ji Young KIM, Won Sub SHIN, Hae Won KANG
  • Patent number: 10770139
    Abstract: There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: September 8, 2020
    Assignee: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Gun Hwan Kim, Young Kuk Lee, Taek Mo Chung, Bo Keun Park, Jeong Hwan Han, Ji Woon Choi
  • Publication number: 20180342297
    Abstract: There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.
    Type: Application
    Filed: May 1, 2018
    Publication date: November 29, 2018
    Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Gun Hwan KIM, Young Kuk LEE, Taek Mo CHUNG, Bo Keun PARK, Jeong Hwan HAN, Ji Woon CHOI