Abstract: A method for compatibility of an SDK with an access application includes transmitting to a management and control center bridge configuration information of an access application, the bridge configuration information representing configuration of an application function module of the access application; receiving a specific bridge issued by the management and control center and matched with the bridge configuration information, the specific bridge including a specific compatibility policy and SDK function modules, and the specific compatibility policy being used for carrying out specific processing on service parameters required by the application function module, so as to make the service parameters compatible with service parameters required by an SDK functional component in an SDK having a function corresponding to the application function module; mounting the specific bridge in the SDK; and when the access application runs the application function module, calling the corresponding SDK functional component

Abstract: A headphone with a touchscreen, includes a headband, a first headphone body, a second headphone body, and a touch control apparatus, where the first headphone body and the second headphone body are respectively disposed on two ends of the headband, and the touch control apparatus is detachably disposed on the first headphone body; and a first wireless communication element is disposed in the first headphone body, and a second wireless communication element is disposed in the touch control apparatus, and the first wireless communication element is communicatively connected to the second wireless communication element. The touch control apparatus is detachably arranged on the first headphone body, the first wireless communication element is arranged in the first headphone body, and the second wireless communication element is arranged in the touch control apparatus, such that the touch control apparatus can be taken down from the first headphone body, facilitating user operation.

Abstract: Disclosed are an electric drive assembly and an electric device. The electric drive assembly includes a motor, a speed shifting mechanism connected to the motor, and a cooling system configured to supply lubricating oil to the motor and the speed shifting mechanism in sequence. With the cooling system provided, lubricating oil is sequentially supplied to the motor and the speed shifting mechanism, reducing the loss of the cooling capacity of lubricating oil in the speed shifting mechanism, improving the cooling efficiency and the utilization rate of the cooling capacity, and reducing the loss.

Abstract: Disclosed are a motor, an electric drive device, an electric drive system, and an electric apparatus. The motor includes a casing and a stator. The casing has a first accommodation cavity configured to accommodate a cooling medium. The stator is disposed in the first accommodation cavity. At least part of the stator is immersed in the cooling medium.

Abstract: The present disclosure is applicable to the technical field of motors, and provides a motor rotor, a motor, a power assembly, and an electric apparatus, where the electric apparatus includes a power assembly, the power assembly includes a motor, and the motor includes a motor rotor, a stator, and a rotation shaft. The motor rotor includes a mounting frame and a magnet steel mounted to the mounting frame. The mounting frame is provided with a limiting wall for resisting a centrifugal movement of the magnet steel in a radial direction. By providing the limiting wall on the mounting frame, the limiting wall may share the stress of the mounting frame due to the centrifugal movement of the magnet steel in the radial direction, so that the mounting frame may bear a greater stress, thus alleviating the problem that the magnet steel is thrown out when the motor rotor rotates.

Abstract: A semiconductor structure includes a stack structure including interleaved conductive layers and dielectric layers, memory strings and slit structures extending through the stack structure, and top select gate cuts extending through the stack structure. At least two of the top select gate cuts are disposed between adjacent slit structures. One of the memory strings includes a memory film and a channel layer. The memory film includes a tunneling layer, a storage layer, and a blocking layer. Each of the top select gate cuts has a width smaller than a diameter of the memory strings.

Abstract: A stator includes a stator core and a stator winding. The stator core has a plurality of winding slots formed at an end surface of the stator core in an axial direction of the stator core and arranged at intervals in a circumferential direction of the stator core, and each of the plurality of winding slots extends through an inner wall and an outer wall of the stator core. The stator winding includes at least one coil unit, and each of the at least coil unit includes a plurality of first conductors assembled together. Each of the plurality of first conductors includes at least one insertion portion inserted into a corresponding one of the plurality of winding slots. The coil unit is formed by assembling and connecting the plurality of first conductors.

Abstract: An axial flux motor, an electric device, and a vehicle are provided. The axial flux motor includes a housing defining an accommodation space, a stator assembly, a rotor assembly, and a partition assembly. The stator assembly and the rotor assembly are arranged in the accommodation space in an axial direction of the axial flux motor. The partition assembly includes a partition body arranged between the stator assembly and the rotor assembly. The housing cooperates with the partition body to form a cooling space for accommodating a coolant and the stator assembly, and the coolant in the cooling space is in direct contact with the stator assembly. With the above implementation, the partition body is disposed between the stator assembly and the rotor assembly, such that an inner space of the housing is reasonably utilized and thus the structure of the axial flux motor is more compact.

Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.

Abstract: Embodiments of a three-dimensional (3D) memory device and fabrication methods are disclosed. In some embodiments, the method for forming the 3D memory device includes forming an alternating dielectric stack on a substrate, and forming channel holes that penetrate the alternating dielectric stack and expose at least a portion of the substrate. The method further includes forming top select gate openings that penetrate vertically an upper portion of the alternating dielectric stack and extend laterally. The method also includes forming slit openings parallel to the top select gate openings, wherein the slit openings penetrate vertically the alternating dielectric stack. The method also includes replacing the alternating dielectric stack with a film stack of alternating conductive and dielectric layers, forming top select gate cuts in the top select gate openings, and forming slit structures in the slit openings.

Abstract: In an example, a three-dimensional (3D) memory device includes a memory stack and a through stair contact (TSC). The memory stack includes interleaved conductive layers and dielectric layers. The memory stack includes stairs in a staircase region. The TSC extends through the memory stack in the staircase region. The TSC includes a first conductor layer and a first spacer circumscribing the first conductor layer. The first conductor layer of the TSC is insulated from the conductive layers of the memory stack by the first spacer.

Abstract: A moving object tracking approach for a quadrupedal robot based on a Siamese network comprises an RNN-based object detector for locating moving objects. The position information of moving objects is sent into a ResNet-based feature extractor. For regressing bounding boxes of a target object, a Siamese adaptive network is employed. Experimental results on several public benchmarks show that this approach achieves excellent VOT performances, e.g., it obtains EAO score by 0.452 points, Accuracy score by 0.592 points, and Robustness score by 0.155 points on public benchmark VOT2018. it is successfully used on a quadrupedal robot, which can accurately track a specific moving object in real-world complicated scenes.

Abstract: The present disclosure relates to methods for obtaining channel state information (CSI), apparatus, and computer storage medium. One example method includes allocating, by a network device to a terminal device according to a preset rule, a transmission resource for transmitting a sounding reference signal (SRS) in a cell to which the terminal device belongs. Transmission resources for transmitting SRSs in different cells do not overlap at all or partially overlap. The network device receives the SRS transmitted by the terminal device on the allocated transmission resource, and performs channel quality estimation based on the received SRS to obtain CSI.

Abstract: In certain aspects, a semiconductor device includes a substrate, a stack structure over the substrate and including interleaved conductive layers and dielectric layers, and a connection structure extending through the stack structure into the substrate. The connection structure includes a conductor layer and a spacer over a sidewall of the conductor layer. The conductor layer of the connection structure is in direct contact with the substrate.

Abstract: In an example, a three-dimensional (3D) memory device includes a memory stack and a through stair contact (TSC). The memory stack includes interleaved conductive layers and dielectric layers. The memory stack includes stairs in a staircase region. The TSC extends through the memory stack in the staircase region. The TSC includes a first conductor layer and a first spacer circumscribing the first conductor layer. The first conductor layer of the TSC is insulated from the conductive layers of the memory stack by the first spacer.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes the following operations. First, a slit structure and a support structure are formed in a stack structure having interleaved a plurality of sacrificial material layers and a plurality of insulating material layers, the initial support structure between adjacent slit openings of the slit structure. A source structure is formed to include a source portion in each of the slit openings. A pair of first portions of a connection layer is formed in contact with and conductively connected to the source portion. A second portion of the connection layer is formed in contact with and conductively to the pair of first portions of the connection layer.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes forming a first source contact portion in a substrate, forming a dielectric stack over the first source contact portion, and forming a slit opening extending in the dielectric stack and exposing the first source contact portion. The method also includes forming a plurality of conductor layers through the slit opening and form a second source contact portion in the slit opening and in contact with the first source contact portion.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack having interleaved a plurality of conductor layers and a plurality of insulating layers, a plurality of channel structures extending in the memory stack, and a source structure extending in the memory stack. The source structure includes a plurality of source contacts each in a respective insulating structure. Two adjacent source contacts are conductively connected to one another by a connection layer, the connection layer includes a pair of first portions being over the two adjacent ones of the plurality of source contacts and a second portion between the pair of first portions. A support structure is between the two adjacent source contacts. The support structure includes a cut structure over interleaved a plurality of conductor portions and a plurality of insulating portions.

Abstract: Embodiments of three-dimensional (3D) memory devices having through stair contacts (TSCs) and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack and a TSC. The memory stack includes a plurality of interleaved conductive layers and dielectric layers. Edges of the interleaved conductive layers and dielectric layers define a staircase structure on a side of the memory stack. The TSC extends vertically through the staircase structure of the memory stack. The TSC includes a conductor layer and a spacer circumscribing the conductor layer.

Abstract: In certain aspects, a semiconductor device includes a substrate, a stack structure over the substrate and including interleaved conductive layers and dielectric layers, and a connection structure extending through the stack structure into the substrate. The connection structure includes a conductor layer and a spacer over a sidewall of the conductor layer. The conductor layer of the connection structure is in direct contact with the substrate.