Patents by Inventor Ji Ye KIM

Ji Ye KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11955531
    Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.
    Type: Grant
    Filed: February 27, 2023
    Date of Patent: April 9, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dae-young Kwak, Ji-ye Kim, Jung-hwan Chun, Min-chan Gwak, Dong-hyun Roh, Jin-wook Lee, Sang-jin Hyun
  • Publication number: 20240026182
    Abstract: The present disclosure relates to the composition and process for the production of an ultra-strong, biocompatible, electroconductive, and stretchable hydrogel, which comprises: a step (a) of physical or chemical modification of natural polymers e.g., preparation of silk nanofiber and double methacrylation of gelatin; a step (b) of graphene oxide (GO) carboxylation; a step (c) of carbodiimidation between methacrylated natural polymers of step (a) and carboxylated GO of step (b); and a step (d) of three dimensional (3D) bioprinting of step (c) with/without silk nanofiber. It was found that these steps in this disclosure give rise to a biocompatible hydrogel with high mechanical strength in the range of load-bearing soft tissue such as tendon and heart as opposed to conventional hydrogels.
    Type: Application
    Filed: August 5, 2022
    Publication date: January 25, 2024
    Applicant: INDUSTRY ACADEMIC COOPERATION FOUNDATION, HALLYM UNIVERSITY
    Inventors: Chan Hum PARK, Young Jin LEE, Olatunji Abolarin AJITERU, Ok Joo LEE, Ji Seung LEE, Han Na LEE, Md Tipu SULTAN, Jang Min KIM, Oh Jun KWON, Ji Ye KIM, Ji Won HEO, Soon Hee KIM
  • Publication number: 20230207662
    Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.
    Type: Application
    Filed: February 27, 2023
    Publication date: June 29, 2023
    Inventors: Dae-young KWAK, Ji -ye KIM, Jung-hwan CHUN, Min-chan GWAK, Dong-hyun ROH, Jin-wook LEE, Sang-jin HYUN
  • Patent number: 11626503
    Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.
    Type: Grant
    Filed: August 3, 2021
    Date of Patent: April 11, 2023
    Inventors: Dae-young Kwak, Ji-ye Kim, Jung-hwan Chun, Min-chan Gwak, Dong-hyun Roh, Jin-wook Lee, Sang-jin Hyun
  • Publication number: 20210384321
    Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.
    Type: Application
    Filed: August 3, 2021
    Publication date: December 9, 2021
    Inventors: Dae-young KWAK, Ji -ye KIM, Jung-hwan CHUN, Min-chan GWAK, Dong-hyun ROH, Jin-wook LEE, Sang-jin HYUN
  • Patent number: 11114544
    Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: September 7, 2021
    Inventors: Dae-young Kwak, Ji-ye Kim, Jung-hwan Chun, Min-chan Gwak, Dong-hyun Roh, Jin-wook Lee, Sang-jin Hyun
  • Publication number: 20200168720
    Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.
    Type: Application
    Filed: August 27, 2019
    Publication date: May 28, 2020
    Inventors: Dae-young Kwak, Ji-ye Kim, Jung-hwan Chun, Min-chan Gwak, Dong-hyun Roh, Jin-wook Lee, Sang-jin Hyun
  • Publication number: 20120135784
    Abstract: A mobile terminal includes a reception unit to receive content information, an extraction unit to recognize an item of interest from the received content information and to extract detailed information, an augmented reality database to store the detailed information, and a display unit to combine the information stored in the augmented reality database with a first image and to output the combined second image in augmented reality. A method for providing an augmented reality by construction and management of a unique augmented reality database includes receiving content information, recognizing an item of interest in the received content information, extracting detailed information from metadata corresponding to the recognized item of interest, storing the detailed information in the augmented reality database, and combining the information stored in the augmented reality database with a first image into a second image, and outputting the second image in augmented reality.
    Type: Application
    Filed: June 10, 2011
    Publication date: May 31, 2012
    Applicant: PANTECH CO., LTD.
    Inventors: Hyo Jin LEE, Gum Ho KIM, Won Moo KIM, Ji Ye KIM, Jae Beom BAE, Jeong Seok LEE