Patents by Inventor Ji-Ye NOH

Ji-Ye NOH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical memory devices
    Patent number: 10950624
    Abstract: A vertical memory device includes gate electrodes on a substrate and a channel. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The channel extends through the gate electrodes, and includes a first portion, a second portion and a third portion. The second portion is formed on and connected to the first portion, and has a sidewall slanted with respect to the upper surface of the substrate so as to have a width gradually decreasing from a bottom toward a top thereof. The third portion is formed on and connected to the second portion.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: March 16, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seok-Cheon Baek, Ji-Ye Noh, Yoon-Hwan Son, Ji-Sung Cheon
  • VERTICAL MEMORY DEVICES
    Publication number: 20200185409
    Abstract: A vertical memory device includes gate electrodes on a substrate and a channel. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The channel extends through the gate electrodes, and includes a first portion, a second portion and a third portion. The second portion is formed on and connected to the first portion, and has a sidewall slanted with respect to the upper surface of the substrate so as to have a width gradually decreasing from a bottom toward a top thereof. The third portion is formed on and connected to the second portion.
    Type: Application
    Filed: May 22, 2019
    Publication date: June 11, 2020
    Inventors: Seok-Cheon BAEK, Ji-Ye NOH, Yoon-Hwan SON, Ji-Sung CHEON