Patents by Inventor Ji Yeong SHIN
Ji Yeong SHIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240096558Abstract: A multilayer electronic component includes a silicon (Si) organic compound layer having a body cover portion disposed in a region, in which electrode layers are not disposed, of external surfaces of a body, and an extending portion disposed to extend from the body cover portion between an electrode layer and a conductive resin layer of an external electrode, and thus, may improve bending strength and humidity resistance reliability.Type: ApplicationFiled: November 20, 2023Publication date: March 21, 2024Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Dong Yeong KIM, Ji Hong JO, Woo Chul SHIN
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Patent number: 11923216Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.Type: GrantFiled: August 22, 2022Date of Patent: March 5, 2024Assignees: SAMSUNG ELECTRONICS CO., LTD., SEMES CO., LTD.Inventors: Seung Min Shin, Sang Jin Park, Hae Won Choi, Jang Jin Lee, Ji Hwan Park, Kun Tack Lee, Koriakin Anton, Joon Ho Won, Jin Yeong Sung, Pil Kyun Heo
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Patent number: 11925098Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.Type: GrantFiled: November 8, 2022Date of Patent: March 5, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Myoung Geun Cha, Sang Gun Choi, Joon Woo Bae, Ji Yeong Shin, Yong Su Lee
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Patent number: 11910664Abstract: A display device includes a substrate including a display area including a plurality of pixels, a peripheral area around the display area, and a bending area disposed in the peripheral area. A plurality of transistors is disposed in each pixel; a driving voltage line is disposed in the display area and transmits a driving voltage; a driving voltage transmission line is disposed in the peripheral area and is connected to the driving voltage line; and a conductive overlap layer overlaps at least one of the plurality of transistors.Type: GrantFiled: December 18, 2018Date of Patent: February 20, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Myoung Geun Cha, Sang Gun Choi, Ji Yeong Shin, Yong Su Lee
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Publication number: 20240023374Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.Type: ApplicationFiled: September 21, 2023Publication date: January 18, 2024Inventors: MYOUNG GEUN CHA, SANG GUN CHOI, SANG SUB KIM, JI YEONG SHIN, YONG SU LEE, KI SEOK CHOI
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Publication number: 20230223478Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.Type: ApplicationFiled: March 17, 2023Publication date: July 13, 2023Applicant: Samsung Display Co., LTD.Inventors: Sang Sub KIM, Keun Woo KIM, Ji Yeong SHIN, Yong Su LEE, Myoung Geun CHA, Ki Seok CHOI, Sang Gun CHOI
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Patent number: 11626429Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.Type: GrantFiled: October 15, 2020Date of Patent: April 11, 2023Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Sang Sub Kim, Keun Woo Kim, Ji Yeong Shin, Yong Su Lee, Myoung Geun Cha, Ki Seok Choi, Sang Gun Choi
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Publication number: 20230068662Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.Type: ApplicationFiled: November 8, 2022Publication date: March 2, 2023Applicant: Samsung Display Co., Ltd.Inventors: Myoung Geun CHA, Sang Gun CHOI, Joon Woo BAE, Ji Yeong SHIN, Yong Su LEE
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Patent number: 11502282Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.Type: GrantFiled: October 21, 2020Date of Patent: November 15, 2022Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Myoung Geun Cha, Sang Gun Choi, Joon Woo Bae, Ji Yeong Shin, Yong Su Lee
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Patent number: 11450133Abstract: An ultrasonic sensing device includes: a sensing layer between a driving electrode and a sensing electrode, a double-gated first transistor connected to a selection line and the sensing electrode, and may further include a sensed voltage storing capacitor having an electrode on the same layers as the first transistor. The configuration as a double gated transistor of a pixel sensor and the placement of one of the capacitor electrodes on the same layer can each reduce the size of the pixel sensor. The ultrasonic sensing device may be utilized as a proximity sensor or a fingerprint recognition sensor.Type: GrantFiled: March 19, 2020Date of Patent: September 20, 2022Assignee: Samsung Display Co., Ltd.Inventors: Keun Woo Kim, Doo Na Kim, Ji Yeong Shin, Yong Su Lee, Jae Hwan Chu, Ki Seok Choi
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Publication number: 20220013617Abstract: An exemplary embodiment of the present invention provides a display device including: a substrate including a display area including a plurality of pixels, a peripheral area around the display area, and a bending area that is disposed in the peripheral area and is bent or is able to be bent: a plurality of transistors disposed in the pixel; a driving voltage line that is disposed in the display, area and transmits a driving voltage; a driving voltage transmission line disposed in the peripheral area and connected to the driving voltage line; and an overlap layer that is conductive and overlaps at least one of the plurality of transistors in a plan view, wherein the overlap layer may be disposed in a layer between the substrate and the transistors, the overlap layer may include a first portion disposed in the display area and a second portion disposed in the peripheral area, the second portion may overlap the driving voltage transmission line in the plan view, the second portion may contact the driving voltageType: ApplicationFiled: December 18, 2018Publication date: January 13, 2022Inventors: MYOUNG GEUN CHA, SANG GUN CHOI, JI YEONG SHIN, YONG SU LEE
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Publication number: 20210167153Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.Type: ApplicationFiled: January 19, 2021Publication date: June 3, 2021Inventors: Myoung Geun CHA, Sang Gun CHOI, Sang Sub KIM, Ji Yeong SHIN, Yong Su LEE, Ki Seok CHOI
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Publication number: 20210151475Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.Type: ApplicationFiled: October 15, 2020Publication date: May 20, 2021Applicant: Samsung Display Co., LTD.Inventors: Sang Sub KIM, Keun Woo KIM, Ji Yeong SHIN, Yong Su LEE, Myoung Geun CHA, Ki Seok CHOI, Sang Gun CHOI
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Patent number: 10930725Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.Type: GrantFiled: September 19, 2019Date of Patent: February 23, 2021Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Myoung Geun Cha, Sang Gun Choi, Sang Sub Kim, Ji Yeong Shin, Yong Su Lee, Ki Seok Choi
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Publication number: 20210036268Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.Type: ApplicationFiled: October 21, 2020Publication date: February 4, 2021Applicant: Samsung Display Co., Ltd.Inventors: Myoung Geun CHA, Sang Gun CHOI, Joon Woo BAE, Ji Yeong SHIN, Yong Su LEE
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Publication number: 20200410192Abstract: An ultrasonic sensing device includes: a sensing layer between a driving electrode and a sensing electrode, wherein the sensing layer is configured to generate an electrical signal according to an ultrasound; and a first transistor comprising a first gate electrode connected to a selection line and a second gate electrode connected to the sensing electrode.Type: ApplicationFiled: March 19, 2020Publication date: December 31, 2020Inventors: Keun Woo KIM, Doo Na KIM, Ji Yeong SHIN, Yong Su LEE, Jae Hwan CHU, Ki Seok CHOI
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Patent number: 10826026Abstract: A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.Type: GrantFiled: November 29, 2018Date of Patent: November 3, 2020Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Myoung Geun Cha, Sang Gun Choi, Joon Woo Bae, Ji Yeong Shin, Yong Su Lee
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Publication number: 20200258966Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.Type: ApplicationFiled: September 19, 2019Publication date: August 13, 2020Inventors: MYOUNG GEUN CHA, SANG GUN CHOI, SANG SUB KIM, JI YEONG SHIN, YONG SU LEE, KI SEOK CHOI
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Publication number: 20190326560Abstract: A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.Type: ApplicationFiled: November 29, 2018Publication date: October 24, 2019Inventors: Myoung Geun CHA, Sang Gun CHOI, Joon Woo BAE, Ji Yeong SHIN, Yong Su LEE