Patents by Inventor Ji Yeoul Ryoo

Ji Yeoul Ryoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090002037
    Abstract: A reset control apparatus may include a first reference generator adapted to output a first reference value in response to an enable signal from an external power source, a second reference generator adapted to receive the first reference value and to output a second reference value, and a set signal generator adapted to output a set signal when the second reference value exceeds a predetermined value.
    Type: Application
    Filed: April 30, 2008
    Publication date: January 1, 2009
    Inventor: Ji-Yeoul Ryoo
  • Patent number: 7313244
    Abstract: Provided are a circuit for and a method of eliminating pop noise in a digital audio amplifier using dual power supply, which are simple, drop in price, and can be readily implemented in a semiconductor chip. According to an existing technique, pop noise is eliminated using a relay. However, in the present circuit and method, pop noise is eliminated using the small number of discrete electronic devices. The circuit for eliminating pop noise controls a voltage at a gate of a power switch, i.e., a power MOS transistor, when power supply voltages are applied and the application of power supply voltages is stopped.
    Type: Grant
    Filed: September 9, 2003
    Date of Patent: December 25, 2007
    Assignee: DMB Technology Co., Ltd.
    Inventors: Tae Ha Ryoo, Byung Tak Jang, Ji-yeoul Ryoo
  • Patent number: 6437360
    Abstract: Disclosed are flat/vertical type vacuum field transistor (VFT) structures, which adopt a MOSFET-like flat or vertical structure so as to increase the degree of integration and can be operated at low operation voltages at high speeds. The flat type comprises a source and a drain, made of conductors, which stand at a predetermined distance apart on a thin channel insulator with a vacuum channel therebetween; a gate, made of a conductor, which is formed with a width below the source and the drain, the channel insulator functioning to insulate the gate from the source and the drain; and an insulating body, which serves as a base for propping up the channel insulator and the gate.
    Type: Grant
    Filed: November 9, 2000
    Date of Patent: August 20, 2002
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Gyu Hyeong Cho, Ji Yeoul Ryoo, Myeoung Wun Hwang, Min Hyung Cho, Young Jin Woo, Young Ki Kim