Abstract: The present invention relates to a method for the screening of a therapeutic agent for Charcot-Marie-Tooth disease (CMT) using induced pluripotent stem cells and motor neurons differentiated therefrom. Particularly, the present inventors prepared induced pluripotent stem cells from the human fibroblasts originated from CMT patient. When the motor neurons differentiated from the said induced pluripotent stem cells are used for the screening of a therapeutic agent for Charcot-Marie-Tooth disease, the pharmaceutical effect of the therapeutic agent candidates can be easily evaluated during the screening. In addition, by the method to prepare the induced pluripotent stem cells, autologous motor neurons which are usable for the screening of a patient-specific therapeutic agent and the patient-specific treatment can be prepared.

Abstract: One or more semiconductor devices are packaged inside a stack-type semiconductor package. The stack-type semiconductor package has a printed circuit board having a circuit pattern. A first semiconductor memory device (first device) is stacked on the PCB and is electrically connected to the PCB circuit pattern. A conductive frame has first terminals and second terminals, and the first terminals are electrically connected to the PCB circuit pattern. A second semiconductor memory device (second device) is stacked on the conductive frame over the first device and is electrically connected to second terminals of the conductive frame. The second device is electrically connected to the PCB circuit pattern and the first device via the conductive frame. Each of the first device may be either a ball grid array type stack package (BGA package) or a thin-small-outline-package-type package. The second device may be a BGA package.

Abstract: The present invention relates to manufacture of a stacked chip package. A first substrate including a first center window is attached to a first semiconductor chip having a plurality of bonding pads arranged on the center part. A first bonding wire is formed to connect the first semiconductor chip and the first substrate. A second substrate including a second center window is attached to a second semiconductor chip having a plurality of bonding pads arranged on the center part. A second bonding wire is formed to connect the second semiconductor chip end the second substrate. The backsides of the resulting first and the second semiconductor chips are attached. A third bonding wire is formed to connect the first and the second substrates. A molding body is formed to overlay the first, the second and the third bonding wires. A conductive ball is adhered to the first substrate.

Abstract: One or more semiconductor devices are packaged inside a stack-type semiconductor package. The stack-type semiconductor package has a printed circuit board having a circuit pattern. A first semiconductor memory device (first device) is stacked on the PCB and is electrically connected to the PCB circuit pattern. A conductive frame has first terminals and second terminals, and the first terminals are electrically connected to the PCB circuit pattern. A second semiconductor memory device (second device) is stacked on the conductive frame over the first device and is electrically connected to second terminals of the conductive frame. The second device is electrically connected to the PCB circuit pattern and the first device via the conductive frame. Each of the first device may be either a ball grid array type stack package (BGA package) or a thin-small-outline-package-type package. The second device may be a BGA package.

Abstract: The present invention provides a method for manufacturing a stacked chip package comprising the steps of attaching a first substrate including a first center window on a first semiconductor chip having a plurality of bonding pads arranged on the center part; forming a first bonding wire connecting the first semiconductor chip and the first substrate; attaching a second substrate including a second center window on a second semiconductor chip having a plurality of bonding pads arranged on the center part; forming a second bonding wire connecting the second semiconductor chip and the second substrate; attaching the backsides of the resulting first and the second semiconductor chips; forming a third bonding wire connecting the first and the second substrates; forming a molding body overlaying the first, the second and the third bonding wires; and adhering a conductive ball to the first substrate.

Abstract: A chip size package is disclosed herein, as well as a method for fabricating the same. A recess is formed in a surface of semiconductor chip. Bonding pads are formed on a bottom center of the recess and insulating pads 30 are formed on both lateral sides of the recess. The respective pads are connected to each other with metal wires. An epoxy compound is filled in the recess. Herein, midway portions of the metal wires are exposed from the epoxy compound. Bumps are formed on the midway portions of the metal wires being exposed from the epoxy compound and solder balls are mounted on the bumps. Therefore, the epoxy compound is not protruded from the semiconductor chip, thickness of the package is equal to that of the semiconductor chip. The thickness of package is minimized.

Abstract: A chip size package is disclosed herein, as well as a method for fabricating the same. A recess is formed in a surface of semiconductor chip. Bonding pads are formed on a bottom center of the recess and insulating pads 30 are formed on both lateral sides of the recess. The respective pads are connected to each other with metal wires. An epoxy compound is filled in the recess. Herein, midway portions of the metal wires are exposed from the epoxy compound. Bumps are formed on the midway portions of the metal wires being exposed from the epoxy compound and solder balls are mounted on the bumps. Therefore, the epoxy compound is not protruded from the semiconductor chip, thickness of the package is equal to that of the semiconductor chip. The thickness of package is minimized.

Abstract: A chip size package is disclosed herein, as well as a method for fabricating the same. A recess is formed in a surface of semiconductor chip. Bonding pads are formed on a bottom center of the recess and insulating pads 30 are formed on both lateral sides of the recess. The respective pads are connected to each other with metal wires. An epoxy compound is filled in the recess. Herein, midway portions of the metal wires are exposed from the epoxy compound. Bumps are formed on the midway portions of the metal wires being exposed from the epoxy compound and solder balls are mounted on the bumps. Therefore, the epoxy compound is not protruded from the semiconductor chip, thickness of the package is equal to that of the semiconductor chip. The thickness of package is minimized.