Patents by Inventor Ji Yong Woo

Ji Yong Woo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240157374
    Abstract: The present invention relates to an electrification unit of an electrostatic precipitator, and more particularly, to an electrification unit having a discharge electrode, which connects a plurality of unit discharge electrodes in a row by means of a connecting terminal, and a groove-shaped fixing structure provided in a casing so that the connecting terminal and a connection part of the unit discharge electrode can be simply fixedly inserted into the corresponding groove, thereby providing excellent assemblability and electrical insulation and improving manufacturability and electrical stability.
    Type: Application
    Filed: July 6, 2022
    Publication date: May 16, 2024
    Applicant: Hanon Systems
    Inventors: Ji-Yong PARK, Jae Ho KIM, Su Jin WOO
  • Patent number: 9178023
    Abstract: Provided are a two-terminal switching device having a bidirectional switching property, and a resistive memory cross-point array including the same. The two-terminal switching device includes a first electrode. A first tunneling barrier layer is disposed on the first electrode. An oxide semiconductor layer is disposed on the first tunneling barrier layer. A second tunneling barrier layer is disposed on the oxide semiconductor layer. A second electrode is disposed on the second tunneling barrier layer.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: November 3, 2015
    Assignee: POSTECH ACADEMY—INDUSTRY FOUNDATION
    Inventors: Hyunsang Hwang, Ji Yong Woo
  • Publication number: 20150221701
    Abstract: A resistive memory device includes a stack of two layers of variable resistance material and top, middle, and bottom electrodes, the stack symmetrical in composition about the middle electrode.
    Type: Application
    Filed: December 1, 2014
    Publication date: August 6, 2015
    Applicant: Postech Academy-Industry Foundation
    Inventors: Min-kyu Yang, Young-bae Kim, Hyun-sang Hwang, Ji-yong Woo
  • Publication number: 20150048299
    Abstract: Provided are a two-terminal switching device having a bidirectional switching property, and a resistive memory cross-point array including the same. The two-terminal switching device includes a first electrode. A first tunneling barrier layer is disposed on the first electrode. An oxide semiconductor layer is disposed on the first tunneling barrier layer. A second tunneling barrier layer is disposed on the oxide semiconductor layer. A second electrode is disposed on the second tunneling barrier layer.
    Type: Application
    Filed: March 28, 2014
    Publication date: February 19, 2015
    Applicant: POSTECH ACADEMY - INDUSTRY FOUNDATION
    Inventors: Hyunsang Hwang, Ji Yong Woo