Abstract: The present invention relates to a crystalline form I represented by formula 1, a method for preparing the same, and a pharmaceutical composition comprising the same. The crystalline form I represented by formula 1 of the present invention may be characterized by XRPD patterns, DSC profiles, TGA profiles, and/or DVS profiles.

Abstract: The present invention relates to a crystalline form IV represented by formula 1, a method for preparing the same, and a pharmaceutical composition comprising the same. The crystalline form IV represented by formula 1 of the present invention may be characterized by XRD patterns, DSC profiles, and/or TGA profiles.

Abstract: The present invention relates to a crystalline form II represented by formula 1, a method for preparing the same, and a pharmaceutical composition comprising the same. The crystalline form II represented by formula 1 of the present invention may be characterized by XRD patterns, DSC profiles, and/or TGA profiles.

Abstract: The present invention relates to a crystalline form III represented by formula 1, a method for preparing the same, and a pharmaceutical composition comprising the same. The crystalline form III represented by formula 1 of the present invention may be characterized by XRD patterns, DSC profiles, and/or TGA profiles.

Abstract: The present invention relates to a crystalline form I represented by formula 1, a method for preparing the same, and a pharmaceutical composition comprising the same. The crystalline form I represented by formula 1 of the present invention may be characterized by XRD patterns, DSC profiles, and/or TGA profiles.

Abstract: The present invention provides a curable resin composition including (A) a silicone-based polymer, (B) hollow particles including a silane group-containing cyclodextrin-based compound including an unsaturated bond on the surface thereof, and (C) a solvent, a cured film obtained by curing the curable resin composition, and an electronic device including the cured film.

Abstract: A display device includes an auxiliary electrode disposed on a substrate, a bank layer disposed on the auxiliary electrode, a conductive layer disposed on the auxiliary electrode, the conductive layer including a base portion and protrusions protruded from the base portion, an organic layer disposed on the conductive layer, and a cathode electrode disposed on the organic layer, the cathode electrode being in contact with the protrusions.

Abstract: A color changing substrate comprises a substrate comprising emission areas and non-emission areas, a color filter layer on the substrate and comprising a light blocking member partitioning the emission areas and the non-emission areas, and a plurality of color filters in areas surrounded by the light blocking member, a bank overlapping the light blocking member, a wavelength control layer comprising wavelength conversion layers and a light transmitting layer in areas surrounded by the bank, a reflective layer overlapping the bank, a first metal oxide layer overlapping the reflective layer, and a self-assembled layer overlapping the first metal oxide layer.

Abstract: A display device includes a base layer; a first electrode located over the base layer; a bank located over the base layer; a light emitting element comprising a coupling electrode layer located over the first electrode; and a second electrode located over the light emitting element. The first electrode and the bank are spaced apart from each other.

Abstract: A curable resin composition comprising (A) a silicone-based polymer, the surface, and (C) a solvent.

Abstract: A color conversion panel includes a substrate, a color conversion layer disposed on the substrate and including a color conversion member, a low refractive layer disposed between the substrate and the color conversion layer, disposed on the color conversion layer, or disposed between the substrate and the color conversion layer and disposed on the color conversion layer, and a planarization layer covering the low refractive layer and the color conversion layer, wherein the color conversion member includes quantum dots and the low refractive layer includes a polymer matrix and hollow particles dispersed in the polymer matrix.

Abstract: A light emitting diode includes: a first semiconductor layer; an active layer located on one surface of the first semiconductor layer; a second semiconductor layer located on one surface of the active layer; an electrode layer located on one surface of the second semiconductor layer; and a bonding electrode layer located on the other surface of the first semiconductor layer.

Abstract: A display device includes a substrate comprising a display area and a non-display area, a via layer disposed on the substrate, a pixel electrode disposed on the via layer in the display area, and a pixel-defining layer disposed on the pixel electrode and a part of the via layer exposed by the pixel electrode, wherein the pixel-defining layer comprises a first area disposed in the display area and comprising an opening exposing a part of the pixel electrode, and a second area disposed in the non-display area and comprising an end, and wherein the first area comprises a first side surface defining the opening, wherein the second area comprises a second side surface at the end, wherein a first taper angle which is a taper angle of the first side surface is different from a second taper angle which is a taper angle of the second side surface.

Abstract: A display device according to an embodiment includes: a substrate including a display area, a dummy area, and a peripheral area; a passivation layer positioned in the display area, the dummy region, and the peripheral area of the substrate; a first adhesive auxiliary layer positioned on the passivation layer and positioned in the dummy region; a dummy pixel defining layer positioned on the first adhesive auxiliary layer and including a hydrophobic material; a second adhesive auxiliary layer positioned on the passivation layer, positioned in the peripheral area, and including a lateral side contacting the dummy pixel defining layer; a common voltage transmitter positioned in the peripheral area; and a common electrode connected to the common voltage transmitter, and positioned on the second adhesive auxiliary layer and the dummy pixel defining layer.

Abstract: A light emitting element includes a first surface corresponding to an end of the light emitting element, a second surface corresponding to another end of the light emitting element, a first semiconductor layer adjacent to the first surface, the first semiconductor layer including a first type of semiconductor, a second semiconductor layer adjacent to the second surface, the second semiconductor layer including a second type of semiconductor different from the first type of semiconductor, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. An area of the first surface is larger than an area of the second surface, and a distance between the first surface and the second surface is shorter than a length defined by the first surface.

Abstract: A display device includes a substrate, a pixel defining layer defining a first opening, a light emitting element including a first electrode exposed to outside the pixel defining layer by the first opening and a light emitting layer in the first opening and facing the first electrode, and a spacer spaced apart from the pixel defining layer along the substrate. The pixel defining layer and the spacer each includes a top surface which is furthest from the substrate and a height of the top surface from the substrate, and the height of the top surface of the spacer is greater than the height of the top surface of the pixel defining layer.

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.

Abstract: A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.