Abstract: Provided is a biodegradable polyester polymer comprising a polymerization reaction product of an aliphatic dicarboxylic acid, an C6-30 aromatic dicarboxylic acid, an aliphatic diol, and a branching agent, and wherein the biodegradable polyester polymer has a ratio of z-average molecular weight (Mz) to weight average molecular weight (Mw) (“Mz/Mw”) greater than 2 and an easy-tear film including the same. The biodegradable film has excellent mechanical properties to effectively protect a product inside the packaging but also be easily opened in a controlled manner without excessive force and at the same time, provide an environmentally-friendly alternative to non-degradable plastics.

Abstract: In a method of forming patterns, first and second upper reverse patterns are formed on a lower reverse layer. A buffer layer is formed to fill first opening portions provided by the first upper reverse pattern. A shield pattern is formed to cover a second region of the buffer layer. An etching process is performed using the shield pattern and the first upper reverse pattern as an etching mask to form first lower reverse patterns providing second openings overlapping first openings, a buffer layer pattern and a second lower reverse pattern overlapping the shield pattern. A hard mask layer is formed and etched to separate hard mask layer first patterns filling the first and second openings. An etching process is performed using the hard mask layer first patterns and the second upper reverse patterns as etching masks to form third lower reverse patterns overlapping the second upper reverse pattern.

Abstract: In a method of forming patterns, first and second upper reverse patterns are formed on a lower reverse layer. A buffer layer is formed to fill first opening portions provided by the first upper reverse pattern. A shield pattern is formed to cover a second region of the buffer layer. An etching process is performed using the shield pattern and the first upper reverse pattern as an etching mask to form first lower reverse patterns providing second openings overlapping first openings, a buffer layer pattern and a second lower reverse pattern overlapping the shield pattern. A hard mask layer is formed and etched to separate hard mask layer first patterns filling the first and second openings. An etching process is performed using the hard mask layer first patterns and the second upper reverse patterns as etching masks to form third lower reverse patterns overlapping the second upper reverse pattern.

Abstract: A method of forming fine patterns includes performing an exposure process to generate acids in first regions of a chemically amplified resist (CAR) layer, removing the exposed first regions using a first development process to form a first resist pattern, diffusing acids in sidewall portions of the first resist pattern into a bulk region of the first resist pattern to form second regions in which the acids are diffused and to form a plurality of third regions between the second regions, and removing the third regions using a second development process to form second resist patterns.