Patents by Inventor Ji-Young Kim

Ji-Young Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210040106
    Abstract: The present invention relates to a method for synthesizing a 3-phenyl-2,8-dihydropyrano[2,3-f]chromene derivative, which may be usefully used for synthesizing a pyranochromenyl phenol derivative, and when the derivative is used, the 3-phenyl-2,3,4,8,9,10-hexahydropyrano[2,3-f]chromene derivative may be effectively prepared.
    Type: Application
    Filed: April 3, 2019
    Publication date: February 11, 2021
    Applicant: GLACEUM INC.
    Inventors: Sang Ku YOO, Jin Wook CHUNG, In Geun JO, Ji Young KIM, Jeong Ho IM, Ku Suk KANG, Jin Young KIM
  • Publication number: 20210030633
    Abstract: The present disclosure provides a pair of tooth-attachable patches for upper teeth and lower teeth, each of the patches including: a drug layer to be attached to teeth; and a backing layer laminated on the drug layer, wherein the heights of the patches for upper teeth and lower teeth are shorter than the crown lengths of maxillary and mandibular central incisors, respectively. The tooth-attachable patches of the present disclosure are prevented from being in contact with the incisal surface of teeth, thereby reducing foreign body sensation while the patches are attached to the teeth.
    Type: Application
    Filed: July 31, 2018
    Publication date: February 4, 2021
    Applicant: LG Household & Health Care Ltd.
    Inventors: Ji-Young Kim, Jae-Hyun Ahn, Seong-Eun Bang
  • Publication number: 20210020641
    Abstract: A semiconductor device includes a plurality of conductive structures arranged on a substrate and spaced apart from each other in a second direction substantially perpendicular to a first direction, in which each of the plurality of conductive structures extends in the first direction. A plurality of contact structures are arranged between the conductive structures in an alternating arrangement and spaced apart from each other in the first direction. A plurality of insulation structures are arranged in a space between the conductive structures and between the contact structures. A plurality of air spacers are arranged between the alternating arrangement of the plurality of conductive structures and the plurality of contact structures, respectively and spaced apart from each other in the first direction.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 21, 2021
    Inventors: Ki-Seok LEE, Bomg-Soo KIM, Ji-Young KIM, Sung-Hee HAN, Yoo-Sang HWANG
  • Publication number: 20210020945
    Abstract: The present disclosure relates to an all solid-state battery cell and a method for manufacturing the same. The gaps between the electrode active material particles forming the electrode active material layer are filled with a mixture of a polymeric solid electrolyte with a conductive material, and an organic solid electrolyte membrane is interposed between the positive electrode and the negative electrode. The method comprises a solvent annealing process to improve the contact between the electrode active material particles and the conductive material and to improve the contact between the electrode active material layer and the organic solid electrolyte membrane, thereby providing an all solid-state battery cell with improved ion conductivity and capacity realization.
    Type: Application
    Filed: May 3, 2019
    Publication date: January 21, 2021
    Applicant: LG Chem, Ltd.
    Inventors: Jung-Pil Lee, Ji-Young Kim, Ji-Hoon Ryu, Sung-Joong Kang, Jae-Hyun Lee
  • Patent number: 10896966
    Abstract: A semiconductor device includes a substrate including a first region and a second region, a buried gate structure located on a first recess in the first region of the substrate, and a recess gate structure located on a second recess in the second region of the substrate, wherein the buried gate structure is buried in the substrate, an upper portion of the recess gate structure is not buried in the substrate, and a first work function adjustment layer in the buried gate structure may include a material identical to a material included in a second work function layer of the recess gate structure.
    Type: Grant
    Filed: April 16, 2019
    Date of Patent: January 19, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-jin Lee, Bong-soo Kim, Ji-young Kim, Ho-rim Yoo
  • Publication number: 20210002680
    Abstract: The present disclosure relates to strains of Thraustochyrium genus, including a high content of polyunsaturated fatty acids, and a method of producing a biomass using the same. According to the novel CJM01 microalgae of Thraustochyrium genus of the present disclosure, the content of lipids in the biomass and the content of unsaturated fatty acid such as docosahexaenoic acid in the biomass are high, so that the microalgae itself, a biomass produced by the culturing and fermentation of microalgae, a condensate of the biomass, and a dried product of the biomass are very useful as a feed composition.
    Type: Application
    Filed: June 26, 2019
    Publication date: January 7, 2021
    Applicant: CJ CHEILJEDANG CORPORATION
    Inventors: Ji Young Kim, Myung Geun Park, Hye Min Park, Jung Woon Choi, Sang Min Park, Sang Young Bae, Jin Sook Chang
  • Publication number: 20200407059
    Abstract: A system and a method for providing service on a golf course using a fuel cell drone using a hydrogen fuel cell as a power source to provide various services while preventing a rounding delay of golfers are provided. A fuel cell drone of a system for providing service on a golf course may include a hydrogen fuel tank in which hydrogen is charged, a power pack configured to generate power to drive the fuel cell drone using the hydrogen in the hydrogen fuel tank, and a controller configured to move the fuel cell drone to a docking station or a gas supply place in response to determining that an amount of hydrogen remaining in the hydrogen fuel tank is below a set value.
    Type: Application
    Filed: February 15, 2019
    Publication date: December 31, 2020
    Inventor: Ji Young KIM
  • Patent number: 10868296
    Abstract: A method for manufacturing an electrode for a solid state battery and an electrode obtained thereby. In the electrode, the electrode active material particles are at least partially surface-coated with a first coating layer including a mixture of (a) a binder, a first polymer electrolyte or both a binder and a first polymer electrolyte, and (b) a conductive material. In addition, the first coating layer in the electrode is formed by an electrospraying and/or electrospinning process.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: December 15, 2020
    Assignee: LG Chem, Ltd.
    Inventors: Jung-Pil Lee, Eun-Bee Kim, Ji-Young Kim, Eun-Kyung Mok, In-Sung Uhm, Hye-Ri Jung
  • Publication number: 20200386208
    Abstract: The present invention relates to a vessel for transporting and installing a offshore wind power generator. The vessel for transporting and installing a offshore wind power generator according to an embodiment of the present invention includes: a support frame enabling a offshore wind power generator to lie moved perpendicularly to a vessel body through a vessel body opening portion formed at a tail of the vessel body; and a sliding deck being able to move horizontally with respect to the vessel body to open and close the vessel body opening portion.
    Type: Application
    Filed: June 10, 2019
    Publication date: December 10, 2020
    Inventors: Jun-Shin LEE, Hong-Kyou CHO, Yang-Ryul CHOI, Young-Key KIM, Ji-Young KIM, Moo-Sung RYU, Min-Uk JUNG, Dong-Ho CHO
  • Publication number: 20200373306
    Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.
    Type: Application
    Filed: August 12, 2020
    Publication date: November 26, 2020
    Inventors: JIN A KIM, Sun Young Lee, Yong Kwan Kim, Ji Young Kim, Chang Hyun Cho
  • Publication number: 20200373499
    Abstract: The present specification relates to a heterocyclic compound represented by Chemical Formula 1, and an organic light emitting device including the same.
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: LT MATERIALS CO., LTD.
    Inventors: Ji-Young KIM, Juntae MO, Dong-Jun KIM
  • Patent number: 10832983
    Abstract: A semiconductor device includes a substrate having a semiconductor layer. A trench is formed within the semiconductor layer. A filling insulating film is disposed within the trench. An insertion liner is disposed within the filling insulating film. The insertion liner is spaced apart from the semiconductor layer and extends along the bottom surface of the trench.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: November 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji Min Choi, Dong Ryul Lee, Ho Ouk Lee, Ji Young Kim, Chang Hyun Cho
  • Patent number: 10825766
    Abstract: A semiconductor device includes a lower wiring, an interlayer insulation film above the lower wiring and including a first portion having a first density, and a second portion on the first portion, the first portion and the second portion having a same material, and the second portion having a second density smaller than the first density, an upper wiring in the second portion of the interlayer insulating film, and a via in the first portion of the interlayer insulating film, the via connecting the upper wiring and the lower wiring.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: November 3, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji Young Kim, Kyu Hee Han, Sung Bin Park, Yeong Gil Kim, Jong Min Baek, Kyoung Woo Lee, Deok Young Jung
  • Publication number: 20200338792
    Abstract: A method for manufacturing a plastic substrate having excellent thickness uniformity, and a plastic substrate having excellent thickness uniformity manufactured thereby.
    Type: Application
    Filed: November 2, 2018
    Publication date: October 29, 2020
    Inventors: Yong Suk KIM, Hye Min KIM, Boo Kyung KIM, Yeong Rae CHANG, Young Tae KIM, Ji Young KIM
  • Patent number: 10818922
    Abstract: An anode active material for a sodium ion secondary battery, a sodium ion secondary battery including an anode active material, and an electric device including the sodium ion secondary battery are disclosed. The anode active material for a sodium ion secondary battery includes a cobalt tin spinel oxide represented by Co2.4Sn0.6O4. The sodium ion secondary battery includes an anode made of an anode active material composed of a cobalt tin spinel oxide represented by Chemical Formula 1 below: Co2+xSn1-xO4,??Chemical Formula 1 where x is a real number satisfying 0?x?0.9; an electrolyte; and a cathode. The sodium ion secondary battery has high capacity characteristics. The electric device including the sodium ion secondary battery includes an electric vehicle, a hybrid electric vehicle, a plug-in hybrid electric vehicle, and an electric power storage system.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: October 27, 2020
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyung Yoon Chung, Hun-Gi Jung, Ji-Young Kim, Ghulam Ali, Mobinul Islam, Sang Ok Kim, Hyungseok Kim
  • Patent number: 10818671
    Abstract: A semiconductor device includes a plurality of conductive structures arranged on a substrate and spaced apart from each other in a second direction substantially perpendicular to a first direction, in which each of the plurality of conductive structures extends in the first direction. A plurality of contact structures are arranged between the conductive structures in an alternating arrangement and spaced apart from each other in the first direction. A plurality of insulation structures are arranged in a space between the conductive structures and between the contact structures. A plurality of air spacers are arranged between the alternating arrangement of the plurality of conductive structures and the plurality of contact structures, respectively and spaced apart from each other in the first direction.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: October 27, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-Seok Lee, Bomg-Soo Kim, Ji-Young Kim, Sung-Hee Han, Yoo-Sang Hwang
  • Patent number: 10818884
    Abstract: Disclosed is a pouch-type secondary battery, which includes an electrode assembly having a positive electrode plate and a negative electrode plate disposed to face each other and a pouch case having a concave groove formed to accommodate the electrode assembly, wherein the pouch case includes a first pouch film and a second pouch film thermally fused to the first pouch film, and wherein a concave groove is formed in at least one of the first pouch film and the second pouch film, and the concave groove has a bottom surface on which the electrode assembly is placed so that the bottom surface has an area equal to or greater than an area of a reference surface that covers an opening of the concave groove.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: October 27, 2020
    Assignee: LG Chem, Ltd.
    Inventors: Jung-Pil Lee, Eun-Bee Kim, Ji-Young Kim, Eun-Kyung Mok, Hye-Ri Jung
  • Patent number: 10804145
    Abstract: A method of fabricating a semiconductor device is provided. The method may include forming a first interlayer insulating film on a substrate, forming a second interlayer insulating film on the first interlayer insulating film, and forming a third interlayer insulating film on the second interlayer insulating film. Different amounts of carbon may be present in each of the first, second, and third interlayer insulating films. The third interlayer insulating film may be used as a mask pattern to form a via trench that extends at least partially into the first interlayer insulating film and the second interlayer insulating film. Supplying a carbon precursor may be interrupted between the forming of the second and third interlayer insulating films, such that the second interlayer insulating film and the third interlayer insulating film may have a discontinuous boundary therebetween.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: October 13, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yeong Gil Kim, Han Seong Kim, Jong Min Baek, Ji Young Kim, Sung Bin Park, Deok Young Jung, Kyu Hee Han
  • Patent number: 10804277
    Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: October 13, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin A Kim, Sun Young Lee, Yong Kwan Kim, Ji Young Kim, Chang Hyun Cho
  • Patent number: 10804571
    Abstract: A method of manufacturing a battery cell is provided. The battery cell has an electrode assembly with a plurality of unit cells that a cathode plate and an anode plate coupled to a separator. A separation sheet or a separator is interposed therebetween. The method includes applying an electrode active material a side of a current collector to manufacture a cathode plate and an anode plate and forming an electrode tab by notching the uncoated portion of the exterior periphery the current collector in the cathode plate and the anode plate where an electrode active material is not coated while forming an aperture. The aperture penetrates through an active material coating layer and the current collector in the coated portion. The method further includes coupling the cathode plate and the anode plate to a separator at a position to allow communication of the apertures to manufacture a unit cell.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: October 13, 2020
    Assignee: LG Chem, Ltd.
    Inventors: Hyun Gyu Han, Ji Young Kim, Dae Sik Choi