Abstract: A semiconductor device includes an active fin disposed on a substrate, a gate structure, and a pair of gate spacers disposed on sidewalls of the gate structure, in which the gate structure and the gate spacers extend across a first portion of the active fin, and a bottom surface of the gate structure is higher than a bottom surface of the gate spacers.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: An integrated circuit (IC) device includes a master latch circuit having a first clock input and a data output, a slave latch circuit having a second clock input and a data input electrically coupled to the data output of the master latch circuit, and a clock circuit. The clock circuit is electrically coupled to the first clock input by a first electrical connection configured to have a first time delay between the clock circuit and the first clock input. The clock circuit is electrically coupled to the second clock input by a second electrical connection configured to have a second time delay between the clock circuit and the second clock input. The first time delay is longer than the second time delay.

Abstract: Provided are FinFET devices and methods of forming the same. A dummy gate having gate spacers on opposing sidewalls thereof is formed over a substrate. A dielectric layer is formed around the dummy gate. An upper portion of the dummy gate is removed and upper portions of the gate spacers are removed, so as to form a first opening in the dielectric layer. A lower portion of the dummy gate is removed to form a second opening below the first opening. A metal layer is formed in the first and second openings. The metal layer is partially removed to form a metal gate.

Abstract: Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.

Abstract: An electronic device includes a processor and a wireless communication module, The processor transmits one or more touch link messages via at least one transmitting electrode of a touch panel device to another electronic device in proximity to the electronic device and receives one or more touch link messages via at least one receiving electrode of the touch panel device from the other electronic device to obtain essential information for establishing a wireless communication connection with the other electronic device. The wireless communication module establishes a wireless communication connection with the other electronic device according to the essential information.

Abstract: An electronic device includes a processor and a wireless communication module, The processor transmits one or more touch link messages via at least one transmitting electrode of a touch panel device to another electronic device in proximity to the electronic device and receives one or more touch link messages via at least one receiving electrode of the touch panel device from the other electronic device to obtain essential information for establishing a wireless communication connection with the other electronic device. The wireless communication module establishes a wireless communication connection with the other electronic device according to the essential information.

Abstract: A light emitting module includes a back plate, at least one fluorescent lamp, a circuit board and a transforming unit. The fluorescent lamp is disposed on a surface of the back plate and has an electrode wire. The circuit board is disposed on the other surface of the back plate. The transforming unit is disposed on the circuit board and has at least one pin. The electrode wire connects with the pin directly.