Abstract: A memory management method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending an erase command sequence configured to erase a first physical erasing unit in a rewritable non-volatile memory module; and sending a write command sequence configured to perform a dummy write operation on a second physical erasing unit in the rewritable non-volatile memory module with correspondence to the erasing of the first physical erasing unit. The dummy write operation is configured to store dummy data to the second physical erasing unit.

Abstract: A memory management method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending an erase command sequence configured to erase a first physical erasing unit in a rewritable non-volatile memory module; and sending a write command sequence configured to perform a dummy write operation on a second physical erasing unit in the rewritable non-volatile memory module with correspondence to the erasing of the first physical erasing unit. The dummy write operation is configured to store dummy data to the second physical erasing unit.

Abstract: A head-mounted display includes a display device, a connecting structure and a head abutting portion. The connecting structure is in a shape of strip. The connecting structure has two opposite ends. The ends are respectively connected with the display device. The connecting structure and the display device define an accommodation space. The accommodation space is configured to accommodate a head of a user. The head abutting portion is pivotally connected with the connecting structure. The head abutting portion is at least partially located between the connecting structure and the display device. The head abutting portion is configured to abut against the head of the user.

Abstract: An artificial tanzanite comprises aluminosilicate and vanadium, wherein the content of the aluminosilicate is in a range from 1 mass % to 30 mass % and the content of the vanadium is in a range from 1000 ppm to 40000 ppm. The artificial tanzanite is prepared by a method comprising: providing a synthetic raw material, wherein the synthetic raw material comprises the aluminosilicate, silicon-containing oxide, vanadium-containing oxide, and calcium-containing salt; and heating the synthetic raw material to a synthetic temperature, and keeping the synthetic raw material under a synthetic pressure to carry out synthetic reaction to form the artificial tanzanite after a period of synthetic time.

Abstract: For a manual gearshift control of conventional vehicle transmission, a vehicle gearshift automatic control device including a first actuator module, a second actuator module and an electronic control unit, is provided in an add-on manner to retrofit the vehicle transmission with both automatic and manual gearshift functions. In an automatic gearshift mode, the electronic control unit executes the vehicle gearshift automatic control method and receives an automatic gearshift command to drive the first actuator module to push a shift lever to implement a lateral shift selection, or to drive the second actuator module to spin a park lever to implement a longitudinal gearshift. For vehicle security, whenever a vehicle gearshift automatic control device failure or a manual gearshift intervention is detected in the automatic gearshift mode, the electronic control unit shuts off the automatic gearshift mode and switches to a manual gearshift mode to perform the manual gearshift function.

Abstract: A data writing method, a memory storage device, and a memory control circuit unit are provided. The method includes: receiving a write command from a host system, and the write command including first data; checking a status of a first physical programming unit in a first physical erasing unit; in response to the status of the first physical programming unit being a first status, sending a first command sequence to a rewritable non-volatile memory module, and the first command sequence being configured to instruct the rewritable non-volatile memory module to store at least part of the first data to the first physical programming unit.

Abstract: A transparent display panel with driving electrode regions, circuit wiring regions, and optically transparent regions is provided. The driving electrode regions are arranged into an array in a first direction and a second direction. An average light transmittance of the circuit wiring regions is less than ten percent, and an average light transmittance of the optically transparent regions is greater than that of the driving electrode regions and the circuit wiring regions. The first direction intersects the second direction. The circuit wiring regions connect the driving electrode regions at intervals, such that each optically transparent region spans among part of the driving electrode regions. The transparent display panel includes first signal lines and second signal lines extending along the circuit wiring regions, and each circuit wiring region is provided with at least one of the first signal lines and at least one of the second signal lines.

Abstract: A circuit substrate includes a base and a plurality of conductive traces. The conductive traces are disposed on the base and on the same layer. The conductive traces include at least one first conductive trace. Wherein, the base has a cut region. The end of the first conductive trace is connected to the end portion of the cut region. The included angle between the rim of the end portion of the cut region and the first conductive trace is 75° to 105°.

Abstract: A circuit substrate comprising a base and a plurality of conductive traces is provided. The conductive traces are disposed on the base and on the same layer. The conductive traces include at least one first conductive trace. Wherein, the base has a cut region. The end of the first conductive trace is connected to the end portion of the cut region. The included angle between the rim of the end portion of the cut region and the first conductive trace is 75° to 105°.