Abstract: A method of manufacturing a flat display is disclosed. First, a first substrate having a first thickness is provided. The first substrate includes a first display area and a first pad area, and a pad electrode is formed in the first pad area and a passivation layer is formed on the pad electrode. Next, a second substrate having a second thickness is provided. The second substrate includes a second display area and a second pad area, the second display area is opposite to the first display area, and the second pad area is opposite to the first pad area. The first substrate and the second substrate are then sealed by a sealing material. After removing the second pad area of the second substrate, the passivation layer on the first pad area is then removed to expose the pad electrode. At the same time, the thickness of the first substrate is reduced from the first thickness to the third thickness.

Abstract: A method to fabricate the TFT of a flat panel display. The method includes four photo etching processes and a back-exposure step. The gate is formed by the first photo etching process. The source and the drain are formed by the second photo etching process. Next, the back-exposure step is performed from the back of the substrate to form an island structure. Then, a protect layer is formed by the third photo etching process. Finally, the pixel electrode is formed by the fourth photo etching process.

Abstract: The thin film transistor (TFT) display includes a gate electrode and a gate pad respectively formed on a transistor area and a bonding pad area, an insulating layer covered over the gate electrode and a first area of the gate pad, a first semiconductor layer covered over the insulating layer, a second semiconductor layer covered over a predetermined area of the first semiconductor layer, and a metal layer covered on the second semiconductor layer to form a source electrode and a drain electrode. A channel is formed between the source and drain electrodes. The TFT display further includes a first conductive layer, a protective layer, and a second conductive layer. The first conductive layer is formed on the drain electrode, the source electrode, and the substrate except for the surface of the gate pad. The protective layer covers the first conductive layer and the first area of the gate pad.

Abstract: The present invention provides a driving method for a liquid-crystal-display (LCD) which is driven by a plurality of switching transistors positioned in a matrix. The drain of each switching transistor couples to a first scanning signal via a storage capacitor and to a pixel electrode. The gate and the source of each switching transistor respectively couples to a second scanning signal and a video signal. One step of the driving method is shifting the video signal to have a dc voltage of a first predetermined voltage.

Abstract: A method for forming a thin film transistor (TFT) is disclosed. A gate electrode, insulating layer, semiconductor layer, doped silicon layer and metal layer are formed on a substrate. A first photoresist layer with a first absorptivity is formed on the metal layer. A second photoresist layer with a second absorptivity is formed on the first photoresist layer. The second absorptivity is higher than the first absorptivity. An exposure process and a development process are performed to form a first pattern on the first photoresist layer and a second pattern on the second photoresist layer at the same time. An etching process is then performed to transfer the first pattern into the semiconductor layer, the doped silicon layer and the metal layer and transfer the second pattern into the doped silicon layer and the metal layer. After performing the etching process, the first photoresist layer and the second photoresist layer are removed.

Abstract: A method to fabricate the TFT of a flat panel display. The method includes four photo etching processes and a back-exposure step. The gate is formed by the first photo etching process. The source and the drain are formed by the second photo etching process. Next, the back-exposure step is performed from the back of the substrate to form an island structure. Then, a protect layer is formed by the third photo etching process. Finally, the pixel electrode is formed by the fourth photo etching process.

Abstract: A panel of a flat panel display comprises a glass substrate, switches, photoresist layers, signal lines disposed on the glass substrate along a first direction, and gate lines disposed on the glass substrate along a second direction and across the first direction to define pixels. Each pixel includes a first area. A plurality of switching units are formed in the first areas of the pixels to control the corresponding pixels. The first, second, and third photoresist layers are disposed in the first, second, and third groups of the pixels, the each first area of each pixel is covered by at least two of the first, second, and third photoresist layers.

Abstract: A multi-domain liquid crystal display (LCD) has a plurality of first alignment-control structures arranged on an inner surface of an upper substrate, and a plurality of second alignment-control structures arranged on an inner surface of a lower substrate. An upper concave is formed between two adjacent first alignment-control structures, and an upper inclined plane is formed between the upper concave and the first alignment-control structure. A lower concave is formed between two adjacent second alignment-control structures, and a lower inclined plane is formed between the lower concave and the second alignment-control structure. Each first alignment-control structure is positioned above a corresponding lower concave, each second alignment-control structure is positioned under a corresponding upper concave, and the upper inclined plane is close to and faces the lower inclined plane.

Abstract: A thin film transistor (TFT) display and a method of fabricating the same are disclosed. The display is formed on a substrate, and the substrate includes a transistor area for forming a transistor, and a pad area for forming a pad. The first step of the method is to form a gate electrode and a pad electrode on the transistor area and the pad area, respectively. Then, an insulating layer is deposited on the substrate and has a pad opening to expose the pad electrode. Next, a semiconductor layer, a doped silicon conductive layer, and a second metal layer are deposited, respectively, above the insulating layer. Then, a channel area is defined in the transistor area by removing portions of the second metal layer and the doped silicon layer within the channel area and outside the transistor area. The remaining second metal layer in the transistor area forms a source metal layer and a drain metal layer. A patterned passivation layer is formed to expose the semiconductor layer outside the transistor area.

Abstract: A liquid crystal display is disclosed. The display includes a first substrate having a first surface, and a second substrate having a second surface being in parallel and opposite to the first surface. A pixel area is defined on the second surface. The display further includes a first electrode positioned on the first substrate, a pixel electrode positioned on the pixel area of the second substrate, a first slit positioned on the pixel electrode along a first direction, and a plurality of negative liquid crystal molecules positioned between the first electrode and the pixel electrode. The longitudinal axis of the liquid crystal molecules are positioned along a second direction horizontally. A first angle is formed between the second direction and the first direction.

Abstract: A thin film transistor display is formed on a substrate having a first region and a second region. The first region includes a transistor area, and the second region includes a pad area. A gate electrode is first formed in the transistor area, and a pad electrode is formed in the pad area. An insulating layer, a semiconductor layer, and a doped silicon layer are formed on the substrate. An opening is formed in the pad area to expose the pad electrode. A channel is defined in the transistor area. A source and a drain electrode are formed and are separated by the channel. The substrate is exposed at a first side area of the first region and exposed in the second region except the pad area.

Abstract: An LCD includes a first substrate having a first surface, and a second substrate having a second surface with a pixel region. The LCD further includes first and second electrodes. The second electrode has a first slit elongated along a first direction. In addition, a third electrode is formed above the second electrode, and a second slit elongated along the first direction is disposed on the third electrode. A plurality of anisotropic liquid crystal molecules with a negative dielectric constant are positioned between the first electrode and the third electrode. A first horizontal biased electric field is formed in the neighborhood of the second slit, the first horizontal biased electric field is perpendicular to the first direction, and the liquid crystal molecules are rotated to make the longitudinal axis of the liquid crystal molecules in the neighborhood of the second slit being in parallel to the first direction.

Abstract: A method of manufacturing a flat display is disclosed. First, a first substrate having a first thickness is provided. The first substrate includes a first display area and a first pad area, and a pad electrode is formed in the first pad area and a passivation layer is formed on the pad electrode. Next, a second substrate having a second thickness is provided. The second substrate includes a second display area and a second pad area, the second display area is opposite to the first display area, and the second pad area is opposite to the first pad area. The first substrate and the second substrate are then sealed by a sealing material. After removing the second pad area of the second substrate, the passivation layer on the first pad area is then removed to expose the pad electrode. At the same time, the thickness of the first substrate is reduced from the first thickness to the third thickness.

Abstract: A method for forming a thin film transistor flat display is disclosed. The flat display includes a glass substrate. A first metal layer is formed on the surface of the glass substrate, the first metal layer is patterned by a first mask to form a gate electrode and a pad electrode. Then, an insulating layer, a semiconductor layer, a doped silicon layer are sequentially formed on the surface of the glass substrate. Further, an active area and a pad opening are defined by a second mask, and then a transparent conductive layer and a second metal layer are formed on the glass substrate. Afterwards, a source electrode and a drain electrode are formed by a third mask in the transistor area and then a passivation layer is formed above the glass substrate. Next, the passivation layer and the second metal layer are patterned by a fourth mask to remove parts of the passivation layer and the second metal layer in the pad opening.

Abstract: A thin film transistor (TFT) display and a method of fabricating the same are disclosed. The display is formed on a substrate, and the substrate includes a transistor area for forming a transistor, and a pad area for forming a pad. The first step of the method is to form a gate electrode and a pad electrode on the transistor area and the pad area, respectively. Then, an insulating layer is deposited on the substrate and has a pad opening to expose the pad electrode. Next, a semiconductor layer, a doped silicon conductive layer, and a second metal layer are deposited, respectively, above the insulating layer. Then, a channel area is defined in the transistor area by removing portions of the second metal layer and the doped silicon layer within the channel area and outside the transistor area. The remaining second metal layer in the transistor area forms a source metal layer and a drain metal layer. A patterned passivation layer is formed to expose the semiconductor layer outside the transistor area.

Abstract: The thin film transistor (TFT) display includes a gate electrode and a gate pad respectively formed on a transistor area and a bonding pad area, an insulating layer covered over the gate electrode and a first area of the gate pad, a first semiconductor layer covered over the insulating layer, a second semiconductor layer covered over a predetermined area of the first semiconductor layer, and a metal layer covered on the second semiconductor layer to form a source electrode and a drain electrode. A channel is formed between the source and drain electrodes. The TFT display further includes a first conductive layer, a protective layer, and a second conductive layer. The first conductive layer is formed on the drain electrode, the source electrode, and the substrate except for the surface of the gate pad. The protective layer covers the first conductive layer and the first area of the gate pad.

Abstract: A liquid crystal display is disclosed. The display includes a first substrate having a first surface, and a second substrate having a second surface being in parallel and opposite to the first surface. A pixel area is defined on the second surface. The display further includes a first electrode positioned on the first substrate, a pixel electrode positioned on the pixel area of the second substrate, a first slit positioned on the pixel electrode along a first direction, and a plurality of negative liquid crystal molecules positioned between the first electrode and the pixel electrode. The longitudinal axis of the liquid crystal molecules are positioned along a second direction horizontally. A first angle is formed between the second direction and the first direction.

Abstract: A thin film transistor display is formed on a substrate having a first region and a second region. The first region includes a transistor area, and the second region includes a pad area. A gate electrode is first formed in the transistor area, and a pad electrode is formed in the pad area. An insulating layer, a semiconductor layer, and a doped silicon layer are formed on the substrate. An opening is formed in the pad area to expose the pad electrode. A channel is defined in the transistor area. A source and a drain electrode are formed and are separated by the channel. The substrate is exposed at a first side area of the first region and exposed in the second region except the pad area.

Abstract: A manufacturing method and the structure of a thin film transistor liquid crystal display (TFT-LCD) are disclosed. The TFT-LCD uses metal electrodes as a mask to thoroughly remove the unwanted semiconductor layer during the etching process for forming the source and drain electrodes. This manufacturing method can reduce the problems caused by the unwanted semiconductor layer, hence improving the quality of the TFT.